Method and device for machining a wafer, in addition to a wafer comprising a separation layer and a support layer
A process and an apparatus are described for the treatment of wafers, in particular for the thinning of wafers. A wafer with a carrier layer and an interlayer arranged between the carrier layer and the wafer is also described, in which the interlayer is a plasmapolymeric layer that adheres to the wafer and adheres more strongly to the carrier layer than to the wafer.
1. Process for the production of a wafer ( 1 , 2 ; 1 b , 2 ; 1 c , 2 ) exhibiting a front side and a rear side, with a carrier layer ( 4 ) and an interlayer ( 3 ) arranged between the carrier layer ( 4 ) and the wafer ( 1 , 2 ; 1 b , 2 ; 1 c , 2 ), said process comprising the steps:
a) supplying a wafer ( 1 , 2 ; 1 b , 2 ; 1 c , 2 ),
b) provision of the wafer ( 1 , 2 ; 1 b , 2 ; 1 c , 2 ) with a plasmapolymeric interlayer ( 3 ) so that this adheres to the wafer ( 1 , 2 ; 1 b , 2 ; 1 c , 2 ),
c) application of a carrier layer ( 4 ) to the interlayer ( 3 ) so that the interlayer ( 3 ) adheres more firmly to the carrier layer ( 4 ) than to the wafer ( 1 , 2 ; 1 b , 2 ; 1 c , 2 ).
2. Process according to claim 1 , in which the wafer ( 1 , 2 ; 1 b , 2 ; 1 c , 2 ) comprises, on its front side, an active layer with electronic components and the interlayer ( 3 ).
3. Process according to claim 1 , in which in step b) the interlayer ( 3 ) is deposited on the wafer ( 1 , 2 ; 1 b , 2 ; 1 c , 2 ), wherein the deposition conditions are varied over time so that the produced interlayer ( 3 ) comprises an adhesive zone ( 3 b ) for the application of the carrier layer ( 4 ) and a dehesive zone ( 3 a ) adjacent to the wafer ( 1 , 2 ; 1 b , 2 ; 1 c , 2 ).
4. Process according to claim 1 , in which the wafer ( 1 , 2 ; 1 b , 2 ; 1 c , 2 ) is wetted with a liquid precursor before step b).
5. Process according to claim 4 , in which the liquid precursor is a separation-active substance.
6. Process according to claim 4 , in which the liquid precursor is applied to the wafer ( 1 , 2 ; 1 b , 2 ; 1 c , 2 ) by means of dipping, spraying or a spincoating process.
7. Process according to claim 4 , in which the step b) is carried out so that the liquid precursor is crosslinked and becomes an integral constituent of the interlayer ( 3 ).
8. Process for the thinning of a wafer ( 1 , 2 ) exhibiting a front side and a rear side, said process comprising the following steps:
production of a wafer ( 1 , 2 ) with a carrier layer ( 4 ) and an interlayer ( 3 ) arranged between the carrier layer ( 4 ) and the wafer ( 1 , 2 ), according to a process in accordance with claim 1 , in which a wafer ( 1 , 2 ) to be thinned is prepared in step a) and
thinning of the rear side of the wafer ( 1 , 2 ).
9. Process for metallizing the rear side of a wafer ( 1 , 2 ; 1 b , 2 ; 1 c , 2 ) exhibiting a front side and a rear side, comprising the following steps:
production and optionally thinning of a wafer ( 1 , 2 ; 1 b , 2 ; 1 c , 2 ) with a carrier layer ( 4 ) and an interlayer ( 3 ) arranged between the carrier layer ( 4 ) and the wafer ( 1 , 2 ; 1 b , 2 ; 1 c , 2 ), according to a process in accordance with claim 1 , and
application of a metal layer to the rear side of the wafer ( 1 , 2 ; 1 b , 2 ; 1 c , 2 ).
10. Process according to claim 8 , in which the interlayer ( 3 ) and the carrier layer ( 4 ) are removed from the wafer ( 1 b , 2 ; 1 c , 2 ) after the thinning of the rear side.
11. Process according to claim 1 , in which in step a) there is supplied a wafer ( 1 , 2 ; 1 b , 2 ; 1 c , 2 ) prepared for separation into individual elements.
12. Process according to claim 11 , in which a separation of the wafer ( 1 , 2 ; 1 b , 2 ; 1 c , 2 ) into individual elements is effected by the thinning or by the removal of the interlayer ( 3 ) and carrier layer ( 4 ).