Method for packaging semiconductor device

1. A method for packaging a semiconductor device, comprising:

providing a wafer having an top surface and a back surface, and a plurality of dies on said wafer;

sawing the wafer to obtain a plurality of dies having an active surface, said active surface having a plurality of pads;

providing a substrate having a top surface and a back surface, a plurality of first connecting points on said top surface, and a plurality of second connecting points on said back surface corresponds to said plurality of first connecting points, and said plurality of first connecting points being electrically connected said plurality of second connecting points;

attaching said plurality of dies on said top surface of said substrate, said active surface of said plurality of dies being inversed toward said top surface of said substrate by using a flip-chip technology, and said plurality of pads being electrically connected said plurality of first connecting points;

filling a under fill molding material to encapsulate said active surface of said plurality of dies and portion of said top surface of said substrate to form an package body;

forming a center line material layer directly connected said top surface being not covered by said package body on said substrate;

providing at least one memory component having an active surface and a back surface, and a plurality of pads on said active surface of said memory component;

attaching said memory component on said top surface of said center line material layer on said substrate, said active surface of said memory component being inversed toward said top surface of said center line material layer, and said plurality of pads being electrically connected said plurality of first connecting points;

mounting a top lid on said back surface of said memory component and on said back surface of said plurality of dies;

forming a plurality of conductive elements on said back surface of said substrate and being electrically connected said plurality of second connecting points; and

performing more than once IR reflow method to fix said plurality of connecting elements on said plurality of second connecting points.

2. The method according to claim 1 , further comprising a capacitor being disposed between said plurality of dies and said memory component on said substrate.

3. The method according to claim 1 , wherein the material of said center line material layer is made of copper or resin.

4. The method according to claim 1 , wherein said die is selected from the group consisting of passive component, logical component, and control component.

5. The method according to claim 1 , wherein said memory component comprises reduced latency dynamic random access memory (RLDRAM).

6. The method according to claim 1 , wherein said memory component is fast cycle random access memory (FCRAM).

7. The method according to claim 1 , further comprising an adhesive layer being disposed between said top lid and said plurality of dies and said memory component, so that said top lid being fixed on said back surface of said plurality of dies and on said back surface of said memory device via said adhesive layer.

8. The method according to claim 1 , wherein the temperature for said IR reflow method is between 200° C. to 250° C.

9. A method for packaging a semiconductor device, comprising:

providing a first die having an active surface and a plurality of pads on said active surface;

providing a substrate having a top surface and a back surface, a plurality of first connecting points on said top surface, and a plurality of second connecting points on said back surface corresponds to said plurality of first connecting points, and said plurality of first connecting points is electrically connected said plurality of second connecting points;

attaching said first die on said top surface of said substrate, said active surface of said first die being inversed toward said top surface of said substrate, and a plurality of pads of plurality of first dies being electrically connecting said plurality of first connecting points;

filling an under fill molding material to encapsulate said active surface of said first die and on portion of said top surface of said substrate to form a package body;

forming a center line material layer directly connected said top surface being not covered by said package body on said substrate;

providing a second die having an active surface and a back surface, a plurality of pads on said active surface;

attaching said second die on said top surface of said center line material layer on said substrate, said active surface of said second die being inversed toward said top surface of said center line material layer by using a flip-chip technology, and said plurality of pads on said active surface of said second die being electrically connected portion of said plurality of conductive connecting points;

mounting a top lid on said back surface of said first die and on said back surface of said second die;

forming a plurality of conductive elements on said back surface of said substrate and being electrically connected said plurality of connecting points; and

performing more than once IR reflow process to fix said plurality of connecting elements on said plurality of second connecting points tightly.

10. The method according to claim 9 , further comprising a capacitor being disposed between said first die and said second die on said substrate.

11. The method according to claim 9 , wherein the material of said center line material layer is made of copper or resin.

12. The method according to claim 9 , wherein the function and dimension are different between said first die and said second die.

13. The method according to claim 9 , wherein said first die is selected from the group consisting of passive component, logical component, and control component.

14. The method according to claim 9 , wherein said second die comprises reduced latency dynamic random access memory (RLDRAM).

15. The method according to claim 9 , wherein said second die comprises fast cycle random access memory (FCRAM).

16. The method according to claim 9 , further comprising an adhesive layer is disposed between said top lid and said first die and second die, so that said top lid is fixed on said back surface of said first die and on said back surface of said second die via said adhesive layer.

17. The method according to claim 9 , wherein the temperature for said IR reflow method is between 200° C. and 250° C.