Structure combining an IC integrated substrate and a carrier, and method of manufacturing such structure
The present invention provides a structure combining an IC integrated substrate and a carrier, which comprises a carrier and an IC integrated substrate formed on the carrier. The IC integrated substrate has a first dielectric layer attached to the carrier. The materials of the carrier and the first dielectric layer are selected to prevent the IC integrated substrate from peeling off the carrier during processing and to allow the IC integrated substrate to naturally separate from the carrier after being cut, through the adhesion between the carrier and the first dielectric layer. The present invention also provides a method of manufacturing the above structure and a method of manufacturing electrical devices using the above structure.
1. A method of manufacturing a structure combining an IC integrated substrate and a carrier, comprising:
providing a carrier; and
forming an IC integrated substrate on the carrier, the IC integrated substrate having a first dielectric layer attached to the carrier, and the step of forming the IC integrated substrate comprises:
forming the first dielectric layer on the carrier;
forming at least one semiconductor device on the first dielectric layer; and
performing an adhesion-enhancing treatment to the interface between the first dielectric layer and the at least one semiconductor device;
wherein the materials of the carrier and the first dielectric layer are selected such that, through adhesion between the carrier and the first dielectric layer, the IC integrated substrate does not peel off from the carrier during processing but separates therefrom after being cut.
2. The method of manufacturing a structure combining an IC integrated substrate and a carrier as described in claim 1 , wherein the IC integrated substrate being cut is separated from the carrier by sticking with tape, clamping with fixtures, or vacuum suction.
3. The method of manufacturing a structure combining an IC integrated substrate and a carrier as described in claim 1 , wherein no adhesive treatment is performed to the interface between the carrier and the first dielectric layer.
4. The method of manufacturing a structure combining an IC integrated substrate and a carrier as described in claim 1 , further comprising:
performing an adhesion-diminishing treatment to the interface between the carrier and the first dielectric layer.
5. The method of manufacturing a structure combining an IC integrated substrate and a carrier as described in claim 1 , wherein the IC integrated substrate comprises a multilayer interconnection structure, and the step of forming the IC integrated substrate comprises:
forming at least one dielectric layer, which comprises the first dielectric layer; and
forming at least one metal layer;
wherein the at least one dielectric layer and the at least one metal layer are alternately formed on the carrier.
6. The method of manufacturing a structure combining an IC integrated substrate and a carrier as described in claim 5 , wherein the step of forming the IC integrated substrate further comprises:
performing an adhesion-enhancing treatment to the interface between adjacent dielectric layers of the multilayer interconnection structure.
7. A method of manufacturing electronic devices, comprising:
providing a carrier;
forming an IC integrated substrate on the carrier, the IC integrated substrate having a first dielectric layer attached to the carrier, and the step of forming an IC integrated substrate comprises:
forming the first dielectric layer on the carrier;
forming at least one semiconductor device on the first dielectric layer; and
performing an adhesion-enhancing treatment to the interface between the first dielectric layer and the at least one semiconductor device, and said method of manufacturing electronic devices further comprising:
cutting at least one piece from the IC integrated substrate, so that each piece cut from the IC integrated substrate separates from the carrier to form an electronic device;
wherein the materials of the carrier and the first dielectric layer are selected such that, through adhesion between the carrier and the first dielectric layer, the IC integrated substrate does not peel off from the carrier during processing but separates therefrom after being cut.
8. The method of manufacturing electronic devices as described in claim 7 , wherein the IC integrated substrate being cut is separated from the carrier by sticking with tape, clamping with fixtures, or vacuum suction.
9. The method of manufacturing electronic devices as described in claim 7 , wherein no adhesive treatment is performed to the interface between the carrier and the first dielectric layer.
10. The method of manufacturing electronic devices as described in claim 7 , further comprising:
performing an adhesion-diminishing treatment to the interface between the carrier and the first dielectric layer.
11. The method of manufacturing electronic devices as described in claim 7 , wherein the IC integrated substrate comprises a multilayer interconnection structure, and the step of forming an IC integrated substrate comprises:
forming at least one dielectric layer, which comprises the first dielectric layer; and
forming at least one metal layer;
wherein the at least one dielectric layer and the at least one metal layer are alternately formed on the carrier.
12. The method of manufacturing electronic devices as described in claim 11 , wherein the step of forming an IC integrated substrate further comprises:
performing an adhesion-enhancing treatment to the interface between adjacent dielectric layers of the multilayer interconnection structure.