Method of forming a semiconductor die
In one embodiment, semiconductor die having non-rectangular shapes and die having various different shapes are formed and singulated from a semiconductor wafer.
1. A method of forming a semiconductor device comprising:
providing a first semiconductor die having a receptacle for receiving a second semiconductor die including using a dry etch method to sinqulate the first semiconductor die from a semiconductor wafer and to simultaneously form the receptacle;
positioning a second semiconductor die within the receptacle;
connecting the first semiconductor die to a first connection terminal, and connecting the second semiconductor die to a second connection terminal; and
encapsulating the first semiconductor die and the second semiconductor die within a semiconductor package.
2. The method of claim 1 wherein providing the first semiconductor die having the receptacle includes providing the first semiconductor die having the receptacle that is one of an opening through the first semiconductor die, a protrusion along a periphery of and extending outwardly from a side of the first semiconductor die, or a curved shape along the periphery of the first semiconductor die.
3. The method of claim 1 wherein positioning the second semiconductor die within the receptacle includes positioning the second semiconductor die that is formed on a substrate other than a silicon substrate.
4. The method of claim 1 wherein encapsulating the first semiconductor die and the second semiconductor die within the semiconductor package includes using a semiconductor package that includes one of a plastic body, a ceramic substrate, or a mold compound.
5. The method of claim 1 further including simultaneously singulating the first semiconductor die from a semiconductor wafer along with a plurality of semiconductor die.
6. A method of forming a semiconductor device comprising:
providing a first semiconductor die having a receptacle for receiving one of a component or a second semiconductor die including forming the receptacle while simultaneously using a dry etch for singulating the first semiconductor die from a semiconductor wafer;
positioning the component within the receptacle;
connecting the first semiconductor die to a first connection terminal;
connecting the component to one of the first semiconductor die or to a second connection terminal; and
encapsulating the first semiconductor die and the component.
7. The method of claim 6 wherein providing the first semiconductor die having the receptacle includes providing the first semiconductor die having the receptacle that is one of an opening through the first semiconductor die, a protrusion along a periphery of and extending outwardly from a side of the first semiconductor die, or a curved shape along the periphery of the first semiconductor die.
8. The method of claim 6 wherein positioning the component within the receptacle includes positioning one of a heat sink, an alignment key, a gallium arsenide active device, a non-silicon active device, a gallium nitride active device, or a passive electrical component.
9. The method of claim 6 further including forming the receptacle while singulatinq the first semiconductor die from a semiconductor wafer.
10. A semiconductor device comprising:
a first semiconductor die having a receptacle for receiving an electrical component wherein the receptacle is formed using a dry etch method to singulate the first semiconductor die from a semiconductor wafer and to simultaneously form the receptacle; and
a component positioned within the receptacle.
11. The semiconductor device of claim 10 wherein the receptacle includes one of an opening through the first semiconductor die, a protrusion along a periphery of and extending outwardly from a side of the first semiconductor die, or a curved shape along the periphery of the first semiconductor die.
12. The semiconductor device of claim 10 wherein the component is one of a second semiconductor die, a gallium arsenide active device, a non-semiconductor active device, a gallium nitride active device, a passive electrical component, a heat sink, an alignment pin, or a mold lock.
13. The semiconductor device of claim 10 further including encapsulating the semiconductor device.
14. The semiconductor die of claim 10 wherein the first semiconductor die has a multiply-connected topology.
15. The semiconductor die of claim 10 wherein the component is an electrical component.
16. The semiconductor die of claim 10 wherein the component is a mold lock.