IP Library Granted Patent US 8,431,082
Granted Patent B2
US 8,431,082 · App. 13/546,344 · Granted Apr 30, 2013

Apparatus and method for producing purified hydrogen gas by a pressure swing adsorption processes

Inventors: Takeshi Kamei (Theodore, AL); Yasunari Takimoto (Yokkaichi, JP)
Assignees: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA); Mitsubishi Materials Corporation
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Quick Facts
Patent No.
US 8,431,082
App. No.
13/546,344
Granted
Apr 30, 2013
Kind
B2
Abstract

The invention relates to a method and an apparatus for producing purified hydrogen gas by a pressure swing adsorption process. Further the invention relates to detecting an operating life of adsorbents in a adsorption tower. The method and the apparatus have a gas supply unit for adding an inert gas to an unpurified hydrogen gas and a detector for measuring an inert gas in a purified hydrogen gas discharged from the adsorption tower.

Claims (21)

1. An apparatus for producing purified hydrogen gas by a pressure swing adsorption processes, comprising:

a gas supply unit for adding an inert gas to an unpurified hydrogen gas;

an adsorption tower filled with an adsorbent for purifying unpurified hydrogen gas fed into the adsorption tower; and

a detector for measuring an inert gas in a purified hydrogen gas discharged from the adsorption tower.

2. The apparatus according to claim 1 , wherein the inert gas is Ar gas.

3. The apparatus according to claim 2 , wherein the detector measures Ar gas in the range of about 0.15 to 0.35 wt %.

4. The apparatus according to claim 2 , wherein the detector measures Ar gas under an adsorption tower pressure range of about 0.59 to 0.76 MPaG.

5. An apparatus, for producing polycrystalline silicon, which purifies hydrogen gas discharged from a reaction of depositing polycrystalline silicon and feeds the hydrogen gas back to the reaction, comprising:

a reactor for depositing polycrystalline silicon on silicon seed rods by reacting trichlorosilane with hydrogen gas;

a condenser for separating an unpurified hydrogen gas discharged from the reactor;

a gas supply unit for adding an inert gas to the unpurified hydrogen gas;

an adsorption tower filled with an adsorbent for purifying unpurified hydrogen gas fed into the adsorption tower; and

a detector for measuring an inert gas in a purified hydrogen gas discharged from the adsorption tower.

6. The apparatus of claim 5 , further comprising a return line for returning some of the discharged purified hydrogen gas back to the adsorption tower for regenerating the adsorption tower.

7. The apparatus according to claim 5 , wherein the inert gas is Ar gas.

8. The apparatus according to claim 7 , wherein the detector measures Ar gas in the range of about 0.15 to 0.35 wt %.

9. The apparatus according to claim 7 , wherein the detector measures Ar gas under an adsorption tower pressure range of about 0.59 to 0.76 MPaG.

10. An apparatus for producing purified hydrogen gas by a pressure swing adsorption processes, comprising:

a gas supply unit for adding an inert gas to an unpurified hydrogen gas;

an adsorption tower filled with an adsorbent for purifying unpurified hydrogen gas fed into the adsorption tower; and

a detector for measuring the inert gas in a purified hydrogen gas after passing through an adsorbent bed in the adsorption tower.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 5, 2023
From: MITSUBISHI MATERIALS CORPORATION
To: HIGH-PURITY SILICON CORPORATION
Reel/Frame 063858/0867 →
Continuity (2)
Division 12917875 · Nov 2, 2010
Related Publication 20120272827A1 · Nov 1, 2012