Stackable wafer level package and fabricating method thereof
A stackable wafer level package and a fabricating method thereof are disclosed. In the stackable wafer level package, bond pads (or redistribution layers) are arranged on a bottom semiconductor die, and metal pillars are formed on some of the bond pads positioned around the edges of the bottom semiconductor die. A top semiconductor die is electrically connected to the other bond pads, on which the metal pillars are not formed, positioned around the center of the bottom semiconductor die through conductive bumps. The metal pillars and the top semiconductor die are encapsulated by an encapsulant. A plurality of interconnection patterns electrically connected to the metal pillars are formed on the surface of the encapsulant. Solder balls are attached to the interconnection patterns. Due to this stack structure, the wafer level package is reduced in thickness and footprint. Therefore, the wafer level package is highly suitable for mobile applications.
1. A wafer level package comprising
a first semiconductor die having metal pillars,
a second semiconductor die connected to the first semiconductor die,
an encapsulant covering the first semiconductor die and the second semiconductor die,
a plurality of redistribution layers that extend over both an upper surface of the second semiconductor die and an upper surface of the encapsulant and are electrically connected to the metal pillars, and
a plurality of solder balls connected to the redistribution layers,
wherein the first semiconductor die has a plurality of bond pads and one or more of the metal pillars is directly formed on a respective one of the bond pads, and the encapsulant directly encapsulates one of the one or more metal pillars,
wherein upper surfaces of the metal pillars, the second semiconductor die and the encapsulant are coplanar, and
wherein a passivation layer is formed on an upper surface of the second semiconductor die and an upper surface of the encapsulant, and the passivation layer is positioned beneath the redistribution layers.
2. The wafer level package of claim 1 , wherein the first semiconductor die is electrically interconnected to the second semiconductor die through conductive bumps.
3. The wafer level package of claim 1 , wherein the second semiconductor die has through-silicon vias (TSVs) electrically connected to the redistribution layers.
4. The wafer level package of claim 1 , wherein the first semiconductor die has a width larger than that of the second semiconductor die.
5. The wafer level package of claim 1 , wherein the metal pillars are made of a material selected from gold (Au), nickel (Ni), copper (Cu), eutectic solders, lead-free solders, nickel-gold (Ni—Au) alloys, copper-nickel (Cu—Ni) alloys, and copper (Cu) lead-free solders.
6. The wafer level package of claim 1 , further wherein the passivation layer surrounds the redistribution layers, and the passivation layer includes openings through which the solder balls extend into contact with the redistribution layers.
7. The wafer level package of claim 1 , wherein the passivation layer comprises a first passivation layer and a second passivation layer, the first passivation layer being formed on the upper surface of the second semiconductor die and the upper surface of the encapsulant, the second passivation layer being formed on the first passivation layer and surrounding the redistribution layers, and the second passivation layer including openings through which the solder balls extend into contact with the redistribution layers.
8. The wafer level package of claim 7 , wherein the second passivation layer includes one of polyimide, benzocyclobutene, polybenzoxazole, bismaleimide-triazine resin, phenolic resin, epoxy resin, and silicone resin.
9. The wafer level package of claim 1 , wherein the metal pillars are disposed about a circumference of the first semiconductor die.
10. The wafer level package of claim 1 , wherein the metal pillars comprise one of gold, nickel, copper, eutectic solders, lead-free solders, nickel-gold alloys, copper-nickel alloys, and copper lead-free solders.
11. The wafer level package of claim 1 , wherein the redistribution layers include a copper solder adhesive layer, and titanium, nickel and palladium barrier layers.
12. The wafer level package of claim 3 , wherein each TSV comprises a through-hole penetrating the second semiconductor die, the through-hole being filled with a conductive material.
13. The wafer level package of claim 3 , wherein the TSVs are electrically connected to the first semiconductor die.