Carbon field effect transistors having charged monolayers to reduce parasitic resistance
Carbon transistor devices having channels formed from carbon nanostructures, such as carbon nanotubes or graphene, and having charged monolayers to reduce parasitic resistance in un-gated regions of the channels, and methods for fabricating carbon transistor devices having charged monolayers to reduce parasitic resistance. For example, a carbon field effect transistor includes a channel comprising a carbon nanostructure formed on an insulating layer, a gate structure formed on the channel, a monolayer of DNA conformally covering the gate structure and a portion of the channel adjacent the gate structure, an insulating spacer conformally formed on the monolayer of DNA, and source and drain contacts connected by the channel.
1. A transistor device, comprising:
a substrate;
an insulating layer formed on the substrate;
a channel comprising a carbon nanostructure formed on the insulating layer;
a gate structure formed on the channel;
a charged monolayer conformally covering the gate structure and a portion of the channel adjacent the gate structure, wherein the charged monolayer reduces a parasitic resistance in an ungated portion of the channel covered by the charged monolayer;
an insulating spacer conformally formed on the charged monolayer; and
source and drain contacts formed on the channel.
2. The device of claim 1 , wherein the carbon nanostructure comprises a carbon nanotube.
3. The device of claim 1 , wherein the carbon nanostructure comprises graphene.
4. The device of claim 1 , wherein the charged monolayer is a self-assembled monolayer.
5. The device of claim 1 , wherein the charged monolayer is formed of DNA.
6. The device of claim 1 , wherein the charged monolayer is formed of an organic material.
7. The device of claim 1 , wherein the gate structure comprises a dielectric layer on the channel and a metal layer on the dielectric layer.
8. A semiconductor integrated circuit, comprising an insulating substrate, and a plurality of carbon transistor devices formed on the insulating substrate, each of the carbon transistor devices comprising:
a channel comprising a carbon nanostructure formed on the insulating substrate;
a gate structure formed on the channel;
a charged monolayer conformally covering the gate structure and a portion of the channel adjacent the gate structure, wherein the charged monolayer reduces a parasitic resistance in an ungated portion of the channel covered by the charged monolayer;
an insulating spacer conformally formed on the charged monolayer; and
source and drain contacts formed on the channel.
9. The semiconductor integrated circuit of claim 8 , wherein the carbon nanostructure comprises a carbon nanotube.
10. The semiconductor integrated circuit of claim 8 , wherein the carbon nanostructure comprises graphene.
11. The semiconductor integrated circuit of claim 8 , wherein the charged monolayer is a self-assembled monolayer.
12. The semiconductor integrated circuit of claim 8 , wherein the charged monolayer is formed of DNA.
13. The semiconductor integrated circuit of claim 8 , wherein the charged monolayer is formed of an organic material.
14. The semiconductor integrated circuit of claim 8 , wherein the gate structure comprises a dielectric layer formed on the channel and a metal layer formed on the dielectric layer.
15. A carbon field effect transistor, comprising:
a channel comprising a carbon nanostructure formed on an insulating layer;
a gate structure formed on the channel;
a monolayer of DNA conformally covering the gate structure and a portion of the channel adjacent the gate structure;
an insulating spacer conformally formed on the monolayer of DNA; and
source and drain contacts formed on the channel.
16. The carbon field effect transistor of claim 15 , wherein the monolayer of DNA reduces a parasitic resistance in an ungated portion of the channel covered by the monolayer of DNA.
17. A method of forming a transistor device, comprising:
forming a channel layer on a substrate, the channel layer comprising a carbon nanostructure material;
forming a gate structure on the channel layer;
forming a charged monolayer conformally covering the gate structure and a portion of the channel layer adjacent the gate structure, wherein the monolayer of DNA reduces a parasitic resistance in an ungated portion of the channel covered by the charged monolayer;
forming an insulating spacer conformally on the charged monolayer; and
forming source and drain contacts on exposed portions of the channel.
18. The method of claim 17 , wherein forming a channel layer comprises forming a carbon nanotube.
19. The method of claim 17 , wherein forming a channel layer comprises forming a graphene channel.
20. The method of claim 17 , wherein forming a charged monolayer comprises forming a self-assembled monolayer.
21. The method of claim 17 , wherein forming a charged monolayer comprises forming a film of DNA material.
22. The method of claim 17 , wherein forming a charged monolayer comprises forming a film of organic material.
23. The method of claim 17 , wherein forming the gate structure comprises forming a gate dielectric layer on the channel and forming a gate metal layer on the dielectric layer.
24. The method of claim 17 , wherein forming an insulating spacer conformally on the charged monolayer comprising growing a conformal insulating layer or material on a surface of the charged monolayer.