Method of manufacturing a semiconductor device and semiconductor device
A method of manufacturing a semiconductor device has forming, in a dielectric film, a first opening and a second opening located in the first opening, forming a first metal film containing a first metal over a whole surface, etching the first metal film at a bottom of the second opening using a sputtering process and forming a second metal film containing a second metal over the whole surface, and burying a conductive material in the second opening and the first opening.
1. A semiconductor device, comprising: a first wiring layer formed over a semiconductor substrate;
a dielectric film formed over the first wiring layer;
a first opening formed in the dielectric film;
a second opening formed in the first opening and reaching the first wiring layer;
a first metal film containing a first metal and formed continuously from a sidewall of the first opening to a sidewall of the second opening;
a second metal film containing a second metal and formed continuously from the sidewall of the first opening to the sidewall of the second opening; and
a conductive material buried in the second opening and the first opening.
2. The semiconductor device according to claim 1 , wherein the first metal includes any one of titanium, zirconium, and manganese, or alloys thereof.
3. The semiconductor device according to claim 1 , wherein the second metal includes any one of tantalum and tungsten, or alloys thereof.
4. The semiconductor device according to claim 1 , wherein the conductive material includes copper.
5. The semiconductor device according to claim 1 further comprising, a third metal film formed at the sidewall of the second opening.
6. The semiconductor device according to claim 5 , wherein the third metal film contains the first metal and the second metal.
7. The semiconductor device according to claim 1 , wherein a bottom of the second opening being located below a upper surface of the first wiring.
8. The semiconductor device according to claim 1 , wherein the first metal film is formed at a bottom of the first opening and the second metal film is formed at the bottom of the first opening.