IP Library › Granted Patent US 8,593,849
Granted Patent B2
US 8,593,849 · App. 13/686,438 · Granted Nov 26, 2013

Memory device interface methods, apparatus, and systems

Inventor: Joe M. Jeddeloh (Shoreview, MN)
Assignee: Micron Technology, Inc.
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Quick Facts
Patent No.
US 8,593,849
App. No.
13/686,438
Granted
Nov 26, 2013
Kind
B2
Abstract

Apparatus and systems for memory system are provided. In an example, a memory system can include a plurality of memory dice and an interface chip. The memory dice can include a first memory die including a memory array coupled to through wafer interconnects (TWIs) and a second memory die, wherein the first memory die is stacked over the second memory die. In an example, the interface chip can be coupled to the TWIs and configured to provide memory commands to selected memory addresses within the plurality of memory dice. In an example, the interface chip can be configured to perform DRAM sequencing.

Claims (91)

1. A memory system comprising:

a plurality of memory dice including:

a first memory die including a memory array coupled to through wafer interconnects (TWIs);

a second memory die, wherein the first memory die is stacked over the second memory die; and

an interface chip coupled to the TWIs and configured to provide memory commands to selected memory addresses within the plurality of memory dice, wherein the interface chip is configured to perform DRAM sequencing.

2. The memory system of claim 1 , wherein the second memory die is disposed on the interface chip and the first memory die is disposed on the second memory die.

3. The memory system of claim 1 , wherein the TWIs pass through vias within the second memory die to connect with the interface chip.

4. The memory system of claim 1 , wherein the second memory die is coupled to the interface chip using connection pins.

5. The memory system of claim 1 , including a substrate, wherein the interface chip is disposed on the substrate.

6. A memory system comprising:

a plurality of memory dice including:

a first memory die including a memory array coupled to through wafer interconnects (TWIs);

a second memory die, wherein the first memory die is stacked over the second memory die; and

an interface chip coupled to the TWIs and configured to provide memory commands to selected memory addresses within the plurality of memory dice, wherein the interface chip includes a multiplexer/demultiplexer circuit.

7. A memory system comprising:

a plurality of memory dice including:

a first memory die including a memory array coupled to through wafer interconnects (TWIs);

a second memory die, wherein the first memory die is stacked over the second memory die; and

an interface chip coupled to the TWIs and configured to provide memory commands to selected memory addresses within the plurality of memory dice, wherein the interface chip includes a plurality of memory controllers.

8. A memory system comprising:

a plurality of memory dice including:

a first memory die including a memory array coupled to through wafer interconnects (TWIs);

a second memory die, wherein the first memory die is stacked over the second memory die; and

an interface chip coupled to the TWIs and configured to provide memory commands to selected memory addresses within the plurality of memory dice, wherein the interface chip is configured to operate a refresh scheme.

9. A memory system comprising:

a plurality of memory dice including:

a first memory die including a memory array coupled to through wafer interconnects (TWIs);

a second memory die, wherein the first memory die is stacked over the second memory die; and

an interface chip coupled to the TWIs and configured to provide memory commands to selected memory addresses within the plurality of memory dice, wherein the interface chip is configured to operate a bad cell recovery scheme on the memory array.

10. A memory system comprising:

a plurality of memory dice including:

a first memory die including a memory array coupled to through wafer interconnects (TWIs);

a second memory die, wherein the first memory die is stacked over the second memory die; and

an interface chip coupled to the TWIs and configured to provide memory commands to selected memory addresses within the plurality of memory dice, wherein the interface chip includes a pattern generator configured to generate test pattern signals.

11. A memory system comprising:

a plurality of memory dice including:

a first memory die including a memory array coupled to through wafer interconnects (TWIs);

a second memory die, wherein the first memory die is stacked over the second memory die; and

an interface chip coupled to the TWIs and configured to provide memory commands to selected memory addresses within the plurality of memory dice, wherein the interface chip is configured to act as an interconnection device.

12. A memory system comprising:

a plurality of memory dice including:

a first memory die including a memory array coupled to through wafer interconnects (TWIs);

a second memory die, wherein the first memory die is stacked over the second memory die; and

an interface chip coupled to the TWIs and configured to provide memory commands to selected memory addresses within the plurality of memory dice, wherein the interface chip is configured to act as an I/O driver.

13. A memory system comprising:

a plurality of memory dice including:

a first memory die including a memory array coupled to through wafer interconnects (TWIs);

a second memory die, wherein the first memory die is stacked over the second memory die; and

an interface chip coupled to the TWIs and configured to provide memory commands to selected memory addresses within the plurality of memory dice, wherein the interface chip includes I/O pads.

14. The memory system of claim 13 , wherein the plurality of memory dice do not include I/O pads.

15. A memory system comprising:

a plurality of memory dice including:

a first memory die including a memory array coupled to through wafer interconnects (TWIs);

a second memory die, wherein the first memory die is stacked over the second memory die; and

an interface chip coupled to the TWIs and configured to provide memory commands to selected memory addresses within the plurality of memory dice, wherein the interface chip includes delayed-locked loop (DLL) circuitry.

16. The memory system of claim 15 , wherein the plurality of memory dice do not include DLL circuitry.

17. A memory system comprising:

a plurality of memory dice including:

a first memory die including a memory array coupled to through wafer interconnects (TWIs);

a second memory die, wherein the first memory die is stacked over the second memory die; and

an interface chip coupled to the TWIs and configured to provide memory commands to selected memory addresses within the plurality of memory dice, wherein the interface chip includes FIFO circuitry.

18. The memory system of claim 17 , wherein the plurality of memory dice do not include FIFO circuitry.

19. A memory system comprising:

a plurality of memory dice including:

a first memory die including a memory array coupled to through wafer interconnects (TWIs);

a second memory die, wherein the first memory die is stacked over the second memory die; and

an interface chip coupled to the TWIs and configured to provide memory commands to selected memory addresses within the plurality of memory dice,

wherein the interface chip is coupled to different memory banks within the plurality of memory dice with independent interconnects, and

wherein the interconnects include the TWIs.

20. A memory system comprising:

a plurality of memory dice including:

a first memory die including a memory array coupled to through wafer interconnects (TWIs);

a second memory die, wherein the first memory die is stacked over the second memory die; and

an interface chip coupled to the TWIs and configured to provide memory commands to selected memory addresses within the plurality of memory dice, wherein the interface chip is configured to transmit and receive test pattern signals between the interface chip and the plurality of memory dice.

21. A memory system comprising:

a plurality of memory dice including:

a first memory die including a memory array coupled to through wafer interconnects (TWIs);

a second memory die, wherein the first memory die is stacked over the second memory die; and

an interface chip coupled to the TWIs and configured to provide memory commands to selected memory addresses within the plurality of memory dice, wherein the interface chip is configured to perform power management within the memory system.

22. A memory system comprising:

a plurality of memory dice including:

a first memory die including a memory array coupled to through wafer interconnects (TWIs);

a second memory die, wherein the first memory die is stacked over the second memory die; and

an interface chip coupled to the TWIs and configured to provide memory commands to selected memory addresses within the plurality of memory dice, wherein the interface chip is configured to perform error detection and/or correction.

23. A memory system comprising:

a plurality of memory dice including:

a first memory die including a memory array coupled to through wafer interconnects (TWIs);

a second memory die, wherein the first memory die is stacked over the second memory die; and

an interface chip coupled to the TWIs and configured to provide memory commands to selected memory addresses within the plurality of memory dice, wherein the interface chip includes a Built in Self-Test (BIST) module.

24. The memory system of claim 23 , wherein the BIST module is coupled to a maintenance bus that is coupled between the interface chip and the plurality of memory dice.

25. The memory system of claim 24 , wherein the BIST module is configured to send command signals and data to the plurality of memory dice through the maintenance bus.

Assignments (8)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050937/0001 →
RELEASE OF SECURITY INTEREST Recorded Aug 23, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047243/0001 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Jun 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 043079/0001 →
PATENT SECURITY AGREEMENT Recorded Jun 2, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 038954/0001 →
SECURITY INTEREST Recorded May 12, 2016
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038669/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 29, 2013
From: JEDDELOH, JOE M.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 031110/0282 →
Continuity (4)
Continuation 13464565 · May 4, 2012
Continuation 12619438 · Nov 16, 2009
Continuation 11847113 · Aug 29, 2007
Related Publication 20130083585A1 · Apr 4, 2013