Radiation-shielded semiconductor device
A semiconductor device is disclosed including an electromagnetic radiation shield. The device may include a substrate having a shield ring defined in a conductance pattern on a surface of the substrate. One or more semiconductor die may be affixed and electrically coupled to the substrate. The one or more semiconductor die may then be encapsulated in molding compound. Thereafter, a metal may be plated around the molding compound and onto the shield ring to form an EMI/RFI shield for the device.
1. A semiconductor device, comprising:
a substrate including a conductance pattern including contact pads and electrical traces;
one or more semiconductor die affixed to the substrate; and
a plated EMI/RFI shield formed in the conductance pattern of the substrate around the one or more semiconductor die.
2. The semiconductor device of claim 1 , wherein the plated EMI/RFI shield includes a shield ring plated on the substrate.
3. The semiconductor device of claim 2 , wherein the shield ring is formed around an outer periphery of the substrate.
4. The semiconductor device of claim 2 , wherein the shield ring includes a plurality of slots.
5. The semiconductor device of claim 2 , wherein the shield ring includes a plurality of holes.
6. The semiconductor device of claim 2 , wherein the plated EMI/RFI shield further includes plating material coupled to the shield ring and extending around the one or more semiconductor die on one side of the substrate.
7. The semiconductor device of claim 1 , further comprising a first encapsulation layer around the one or more semiconductor die and within the EMI/RFI shield.
8. The semiconductor device of claim 1 , further comprising a second encapsulation layer around the EMI/RFI shield.
9. A semiconductor device, comprising:
a substrate including a conductance pattern having contact pads and electrical traces;
one or more semiconductor die affixed to the substrate;
a shield ring, including one or slots and holes, in the conductance pattern in a continuous ring around the one or more semiconductor die;
a first molding compound formed on the substrate around the one or more semiconductor die; and
an EMI/RFI shield applied to the first molding compound around first molding compound and the one or more semiconductor die.
10. The semiconductor device of claim 9 , further comprising a second molding compound around the EMI/RFI shield.
11. The semiconductor device of claim 9 , wherein the EMI/RFI shield is a plated metal applied to the substrate and around the first molding compound.
12. The semiconductor device of claim 9 , wherein the first molding compound is applied to the substrate to cover the one or more semiconductor die, but does not completely cover the shield ring.