IP Library Granted Patent US 8,698,213
Granted Patent B2
US 8,698,213 · App. 13/367,789 · Granted Apr 15, 2014

Pressure-sensitive amplifier stage

Inventor: Wolfgang Buesser (Hargesheim, DE)
Assignee: ELMOS Semiconductor AG
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Quick Facts
Patent No.
US 8,698,213
App. No.
13/367,789
Granted
Apr 15, 2014
Kind
B2
Abstract

Pressure-sensitive amplifier stage comprising four unipolar pressure-sensor transistors each including a piezoresistive current path. The pressure-sensor transistors are connected as a pressure-measuring bridge having two bridge legs each comprising first and second pressure-sensor transistors which are connected in series. Two unipolar control transistors each has a control terminal and a current path arranged between a further first and a further second terminal. The respective first and second terminals of the two control transistors are connected in pairs, and the control terminals each is connected to a node between the pressure-sensor transistors. The interconnected second terminals are connected to the control terminals of the second pressure-sensor transistors of the two bridge legs. The control terminals of the first pressure-sensor transistors are adapted for connection thereto of a respective operating input voltage, and a measurement output voltage is detectable between the pressure-sensor transistors.

Claims (24)

1. A pressure-sensitive amplifier stage comprising

four unipolar pressure-sensor transistors, each comprising a control terminal and a current path arranged between a further first and a further second terminal, said current path being sensitive to mechanical tension,

said four pressure-sensor transistors being connected as a pressure-measuring bridge having two bridge legs, each of said bridge legs comprising a first and a second pressure-sensor transistor which are connected in series with respect to their current paths,

two unipolar control transistors, each having a control terminal and a current path arranged between a further first and a further second terminal,

the respective first and second terminals of said two control transistors being connected in pairs, and the control terminals of the control transistors each being connected to a node between the pressure-sensor transistors of the two bridge legs, and

the interconnected second terminals of the two parallel-connected control transistors being connected to the control terminals of the second pressure-sensor transistors of the two bridge legs,

a first power source connected between a first supply voltage on the one hand, and the first terminals of the first pressure-sensor transistors of the two bridge legs and the interconnected first terminals of the control transistors on the other hand, said first power source being provided for generating a first current, and

a second power source connected between a second supply voltage on the one hand, and the interconnected second terminals of the control transistors and the control terminals of the second pressure-sensor transistors of the two bridge legs on the other hand, said second power source being provided for generating a second current,

the control terminals of the first pressure-sensor transistors of the two bridge legs being adapted for connection thereto of a respective operating input voltage, and a measurement output voltage being detectable between the respective pressure-sensor transistors of the two bridge legs, and

said measurement output voltage of the pressure-measuring bridge being connectable to the control terminals of the first pressure-sensor transistors of the two bridge legs of a further pressure-measuring bridge for cascading the pressure-measuring bridges.

2. The pressure-sensitive amplifier stage of claim 1 , wherein the pressure-sensor transistors and the control transistors are substantially identically scaled and that the amount of the first current is substantially twice the amount of the second current.

3. The pressure-sensitive amplifier stage of claim 1 , wherein the ratio between the difference of the first and second currents and the second current is selected to correspond to the scaling of each of the first pressure-sensor transistors of the two bridge legs relative to each of the two control transistors.

4. The pressure-sensitive amplifier stage of claim 3 , wherein, for preventing or damping of the oscillation of the pressure measurement bridge, a capacitance is connected between the control terminals of the second pressure-sensor transistors of the two bridge legs and the second supply voltage.

5. The pressure-sensitive amplifier stage of claim 4 , wherein the four pressure-sensor transistors are each designed as PMOS transistors.

6. The pressure-sensitive amplifier stage of claim 5 , wherein the two control transistors are each designed as PMOS transistors.

7. The pressure-sensitive amplifier stage of claim 1 , wherein, for preventing or damping of the oscillation of the pressure measurement bridge, a capacitance is connected between the control terminals of the second pressure-sensor transistors of the two bridge legs and the second supply voltage.

8. The pressure-sensitive amplifier stage of claim 2 , wherein, for preventing or damping of the oscillation of the pressure measurement bridge, a capacitance is connected between the control terminals of the second pressure-sensor transistors of the two bridge legs and the second supply voltage.

9. The pressure-sensitive amplifier stage of claim 3 , wherein the four pressure-sensor transistors are each designed as PMOS transistors.

10. The pressure-sensitive amplifier stage of claim 2 , wherein the four pressure-sensor transistors are each designed as PMOS transistors.

11. The pressure-sensitive amplifier stage of claim 1 , wherein the four pressure-sensor transistors are each designed as PMOS transistors.

12. The pressure-sensitive amplifier stage of claim 4 , wherein the two control transistors are each designed as PMOS transistors.

13. The pressure-sensitive amplifier stage of claim 3 , wherein the two control transistors are each designed as PMOS transistors.

14. The pressure-sensitive amplifier stage of claim 2 , wherein the two control transistors are each designed as PMOS transistors.

15. The pressure-sensitive amplifier stage of claim 1 , wherein the two control transistors are each designed as PMOS transistors.

Assignments (4)
MERGER Recorded Jun 17, 2022
From: SILICON MICROSTRUCTURES, INC.
To: MEASUREMENT SPECIALTIES, INC.
Reel/Frame 060237/0556 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 20, 2021
From: ELMOS SEMICONDUCTOR SE
To: SILICON MICROSTRUCTURES, INC.
Reel/Frame 056296/0706 →
CHANGE OF NAME Recorded May 20, 2021
From: ELMOS SEMICONDUCTOR AG
To: ELMOS SEMICONDUCTOR SE
Reel/Frame 056312/0010 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 13, 2012
From: BUESSER, WOLFGANG
To: ELMOS SEMICONDUCTOR AG
Reel/Frame 027691/0565 →
Priority Claims (1)
EP 11153549 · Feb 7, 2011 · regional
Continuity (1)
Related Publication 20120198946A1 · Aug 9, 2012