Methodology for fabricating isotropically recessed source and drain regions of CMOS transistors
A method for fabricating recessed source and recessed drain regions of aggressively scaled CMOS devices. In this method a processing sequence of plasma etch, deposition, followed by plasma etch is used to controllably form recessed regions of the source and the drain in the channel of a thin body, much less than 40 nm, device to enable subsequent epitaxial growth of SiGe, SiC, or other materials, and a consequent increase in the device and ring oscillator performance. A Field Effect Transistor device is also provided, which includes: a buried oxide layer; a silicon layer above the buried oxide layer; an isotropically recessed source region; an isotropically recessed drain region; and a gate stack which includes a gate dielectric, a conductive material, and a spacer.
1. A Field Effect Transistor device, comprising:
a buried oxide layer;
a silicon layer above the buried oxide layer;
an isotropically recessed source and an isotropically recessed drain region, wherein recesses of the source and drain regions are equidistant in both horizontal and vertical directions; and
a gate stack comprising a gate dielectric, a conductive material, and a spacer, the gate stack formed over a channel region having a thickness of less than 40 nanometers (nm).
2. The device of claim 1 , further comprising:
an isotropically recessed source and an isotropically recessed drain region adjacent and underneath the gate stack.
3. The device of claim 1 , wherein the silicon layer further comprises shallow trench isolation regions to provide isolated silicon regions.
4. The device of claim 1 , wherein the silicon layer comprises p or n-doped polysilicon.
5. The device of claim 1 , wherein the source and drain region are formed by n+ (or p+) doping the silicon layer.
6. The device of claim 1 , wherein the drain region is formed by n+ doping the silicon layer.
7. The device of claim 1 , wherein the drain region is formed by p+ doping the silicon layer.
8. The device of claim 1 , wherein the gate stack comprises:
doped polysilicon;
a conformal layer of native oxide; and
a layer of silicon nitride or other dielectric over the gate native oxide.
9. The device of claim 1 , wherein a portion of the source region further comprises a native oxide layer.
10. The device of claim 1 , wherein a portion of the drain region further comprises a native oxide layer.
11. The device of claim 9 , wherein a photoresist is formed over portions of the gate stack, a shallow trench isolation region, the drain region, the source region, and the native oxide layer.
12. A Field Effect Transistor (FET) device comprising:
a source and a drain region adjacent and underneath a portion of a gate stack having sidewalls and a top surface, the gate stack disposed over a silicon containing channel region having a thickness of less than 40 nanometers (nm), the device having a gate dielectric layer over the silicon containing channel region and a native oxide layer over sidewalls and top surface of the gate stack;
a dielectric layer over the native oxide layer on the sidewalls and top surface of the gate stack;
a first recess adjacent the gate stack, the first recess having sidewalls and a bottom surface through a portion of the silicon containing channel region;
an etched sidewall of the first recess in the silicon containing channel region at a predetermined lateral distance underneath the gate stack; an etched bottom surface of the recess at a target vertical etch depth, wherein the predetermined lateral distance and the target vertical etch depth of the first recess are equidistant;
a second recess adjacent the gate stack, the second recess having sidewalls and a bottom surface through a portion of the silicon containing channel region;
an etched sidewall of the second recess in the silicon containing channel region at a predetermined lateral distance underneath the gate stack; and an etched bottom surface of the recess at a target vertical etch depth, wherein the predetermined lateral distance and the target vertical etch depth of the second recess are equidistant.