Semiconductor device comprising a stacked die configuration including an integrated Peltier element
In a stacked semiconductor device, a Peltier element may be incorporated as a distributed element so as to provide active heat transfer from a high power device into a low power device, thereby achieving superior temperature control in stacked device configurations. For example, a CPU and a dynamic RAM device may be provided as a stacked configuration, wherein waste heat of the CPU may be efficiently distributed into the low power memory device.
1. A stacked semiconductor configuration, comprising
a first substrate;
a first semiconductor layer formed above said first substrate;
first circuit elements formed in and above said first semiconductor layer;
a plurality of first semiconductor regions and a plurality of second semiconductor regions formed in said first substrate, said first and second semiconductor regions having different conduction band energy levels;
a first wiring system formed above said first substrate and comprising a plurality of first connections, each of which connects one of said plurality of first semiconductor regions with one of said plurality of second semiconductor regions;
a second substrate attached to said first substrate; and
a second wiring system formed above said second substrate and comprising a plurality of second connections, each of which connects one of said plurality of first semiconductor regions with one of said plurality of second semiconductor regions.
2. The stacked semiconductor configuration of claim 1 , wherein said first circuit elements form a central processing unit.
3. The stacked semiconductor configuration of claim 2 , further comprising second circuit elements formed in and above a second semiconductor layer that is formed above said second substrate, wherein said second circuit elements form a memory circuit.
4. The stacked semiconductor configuration of claim 1 , wherein said first wiring system is provided at least partially in said first semiconductor layer.
5. The stacked semiconductor configuration of claim 4 , wherein said first wiring system is formed at least partially above said first semiconductor layer.
6. The stacked semiconductor configuration of claim 1 , wherein said second substrate is attached to said first substrate by a bump structure.
7. The stacked semiconductor configuration of claim 6 , wherein said second wiring system comprises a plurality of through-holes extending through said second substrate and connecting to said bump structure.
8. The stacked semiconductor configuration of claim 1 , wherein said first and second semiconductor regions and said first and second wiring systems form at least one Peltier element.
9. The stacked semiconductor configuration of claim 8 , further comprising a control circuitry configured to controllably activate said at least one Peltier element.
10. The stacked semiconductor configuration of claim 9 , wherein said control circuitry is further configured to obtain a temperature signal from one of said at least one Peltier element.
11. A semiconductor device, comprising:
a first substrate having a rear side and a front side;
a second substrate having a rear side and a front side; and
a Peltier element comprising a plurality of semiconductor regions formed in said first substrate, a first wiring system connecting to said plurality of semiconductor regions via said front side of said first substrate, and a second wiring system connecting to said plurality of semiconductor regions through openings extending through said second substrate.
12. The semiconductor device of claim 11 , further comprising a first circuit portion formed above the front side of said first substrate and forming an arithmetic unit.
13. The semiconductor device of claim 12 , further comprising a second circuit portion formed above the front side of said second substrate and forming a memory circuit.
14. The semiconductor device of claim 11 , wherein said second wiring system comprises a bump structure.
15. The semiconductor device of claim 11 , wherein a part of said first wiring system is formed in a first metallization system formed above said front side of said first substrate.
16. The semiconductor device of claim 15 , wherein a part of said second wiring system is formed in a second metallization system formed above the front side of said second substrate.
17. The semiconductor device of claim 12 , wherein said first wiring system is connected so as to act as a cooling area.