Semiconductor device and method of bonding different size semiconductor die at the wafer level
A semiconductor wafer has first and second opposing surfaces. A plurality of conductive vias is formed partially through the first surface of the semiconductor wafer. The semiconductor wafer is singulated into a plurality of first semiconductor die. The first semiconductor die are mounted to a carrier. A second semiconductor die is mounted to the first semiconductor die. A footprint of the second semiconductor die is larger than a footprint of the first semiconductor die. An encapsulant is deposited over the first and second semiconductor die and carrier. The carrier is removed. A portion of the second surface is removed to expose the conductive vias. An interconnect structure is formed over a surface of the first semiconductor die opposite the second semiconductor die. Alternatively, a first encapsulant is deposited over the first semiconductor die and carrier, and a second encapsulant is deposited over the second semiconductor die.
1. A method of making a semiconductor device, comprising:
providing a semiconductor wafer including an active surface and a second surface opposite the active surface;
forming a plurality of conductive vias partially through the active surface of the semiconductor wafer;
singulating the semiconductor wafer to separate a first semiconductor die;
disposing a second semiconductor die over the first semiconductor die with the active surface oriented toward the second semiconductor die;
depositing an encapsulant over and around the first and second semiconductor dies;
removing a portion of the second surface to expose a surface of the conductive vias coplanar with the second surface and the encapsulant; and
forming an interconnect structure over the first semiconductor die opposite the second semiconductor die, the interconnect structure including a first insulating layer and a first conductive layer.
2. The method of claim 1 , wherein a footprint of the second semiconductor die is larger than a footprint of the first semiconductor die.
3. The method of claim 1 , further including:
forming a second conductive layer over the active surface of the first semiconductor die prior to mounting the second semiconductor die, the second conductive layer being electrically connected to the conductive vias; and
forming a second insulating layer over the active surface of the first semiconductor die.
4. The method of claim 1 , further including depositing a mold underfill material between the first semiconductor die and second semiconductor die.
5. The method of claim 1 , wherein the second semiconductor die includes a memory device.
6. The method of claim 1 , further including stacking a plurality of second semiconductor die over the first semiconductor die.
7. A method of making a semiconductor device, comprising:
providing a first semiconductor die including an active surface and second surface;
forming a plurality of conductive vias through the active surface of the first semiconductor die;
forming a first interconnect structure over the active surface of the first semiconductor die;
disposing a second semiconductor die over the first semiconductor die with the first interconnect structure between the first and second semiconductor dies, the second semiconductor die extending outside a footprint of the first semiconductor die; and
depositing an encapsulant around the first and second semiconductor dies.
8. The method of claim 7 , further including
forming a second interconnect structure including an insulating layer and conductive layer over the first semiconductor die opposite the second semiconductor die.
9. The method of claim 7 , further including:
disposing the first semiconductor die over a carrier;
forming the plurality of conductive vias partially through the active surface of the first semiconductor die;
removing the carrier; and
removing a portion of the second surface of the first semiconductor die opposite the active surface of the first semiconductor die to expose the conductive vias.
10. The method of claim 7 , wherein the first interconnect structure includes an insulating layer and conductive layer, the conductive layer being electrically connected to the conductive vias.
11. The method of claim 7 , further including depositing a mold underfill material between the first semiconductor die and second semiconductor die.
12. The method of claim 7 , further including stacking a plurality of second semiconductor die over the first semiconductor die.
13. The method of claim 7 , further including forming a plurality of conductive vias through the encapsulant.
14. The method of claim 7 , wherein a footprint of the semiconductor die is larger than a footprint of the substrate.
15. A method of making a semiconductor device, comprising:
providing a first semiconductor die including an active surface and second surface;
forming a plurality of conductive vias through the active surface of the first semiconductor die and coplanar with the active surface of the first semiconductor die;
depositing a first encapsulant over the first semiconductor die including on the active surface;
forming an interconnect structure over the second surface of the first semiconductor die, the interconnect structure including a first insulating layer and a first conductive layer;
disposing a second semiconductor die over the first semiconductor die opposite the active surface with the interconnect structure between the first and second semiconductor dies;
depositing a second encapsulant over the second semiconductor die; and
removing a portion of the first encapsulant on the active surface of the first semiconductor die.
16. The method of claim 15 , wherein a footprint of the second semiconductor die is larger than a footprint of the first semiconductor die.
17. The method of claim 15 , wherein the second semiconductor die includes a memory device.
18. The method of claim 15 , further including depositing a mold underfill material between the first semiconductor die and second semiconductor die.
19. A method of making a semiconductor device, comprising:
providing a substrate including a plurality of conductive vias formed through the substrate;
forming an interconnect structure over the substrate, the interconnect structure including a first insulating layer and a first conductive layer;
depositing a first encapsulant around the substrate and interconnect structure;
disposing a semiconductor die over the substrate with the interconnect structure between the substrate and semiconductor die; and
depositing a second encapsulant over the semiconductor die after disposing the semiconductor die over the substrate.
20. The method of claim 19 , further including:
forming the plurality of conductive vias partially through the substrate; and
removing a portion of the substrate to expose the conductive vias.
21. The method of claim 19 , wherein the substrate includes an active surface.
22. The method of claim 19 , further including depositing a mold underfill material between the substrate and semiconductor die.
23. A method of making a semiconductor device, comprising:
providing a substrate;
forming an interconnect structure over the substrate by,
(a) forming a first insulating layer over the substrate, and
(b) forming a first conductive layer over the substrate;
depositing a first encapsulant over the substrate and interconnect structure;
disposing a semiconductor die over the substrate with the interconnect structure between the substrate and semiconductor die; and
depositing a second encapsulant over the semiconductor die after disposing the semiconductor die over the substrate.
24. The method of claim 23 , further including:
forming a plurality of conductive vias through the substrate.
25. The method of claim 24 , further including:
forming a second conductive layer over the conductive vias; and
forming a second insulating layer over the second conductive layer.
26. The method of claim 23 , further including depositing a mold underfill material between the semiconductor die and the first insulating layer.
27. The method of claim 23 , wherein a footprint of the semiconductor die extends outside a footprint of the substrate.
28. The method of claim 23 , wherein the substrate includes an active surface.