Heterojunction III-V photovoltaic cell fabrication
A heterojunction III-V photovoltaic (PV) cell includes a base layer comprising a III-V substrate, the base layer being less than about 20 microns thick; an intrinsic layer located on the base layer; an amorphous silicon layer located on the intrinsic layer; and a transparent conducting oxide layer located on the amorphous silicon layer.
1. A heterojunction III-V photovoltaic (PV) cell, comprising:
a tensile stressed metal layer,
a first amorphous silicon layer located on the tensile stressed metal layer;
a back surface field located on the first amorphous silicon layer;
an first intrinsic layer located on the back surface field layer;
a base layer comprising a III-V substrate located on the first intrinsic layer, the base layer being less than about 20 microns thick;
an second intrinsic layer located on the base layer;
an second amorphous silicon layer located on the intrinsic layer; and
a transparent conducting oxide layer located on the amorphous silicon layer.
2. The heterojunction III-V PV cell of claim 1 , wherein the back surface field comprises at least one of zinc, indium, or aluminum.
3. The heterojunction III-V PV cell of claim 1 , wherein the second amorphous silicon layer comprises a doping type that is opposite a doping type of the substrate, and the second amorphous silicon layer is configured to act as an emitter.
4. The heterojunction III-V PV cell of claim 1 , wherein the second amorphous silicon layer comprises a doping type that is the same as a doping type of the substrate, and the second amorphous silicon layer is configured to act as a back surface field.
5. The heterojunction III-V PV cell of claim 1 , wherein the second amorphous silicon layer comprises a doping type that is opposite to a doping type of the substrate, and the second amorphous silicon layer is configured to act as an emitter.
6. The heterojunction III-V PV cell of claim 1 , wherein the tensile stressed metal layer comprises nickel.
7. The heterojunction III-V PV cell of claim 1 , wherein the III-V substrate comprises one of germanium or gallium arsenide.