IP Library Granted Patent US 9,082,622
Granted Patent B2
US 9,082,622 · App. 13/115,068 · Granted Jul 14, 2015

Circuit elements comprising ferroic materials

Inventors: Robert Fleming (San Jose, CA); Bhret Graydon (San Jose, CA); Daniel Vasquez (San Jose, CA); Junjun Wu (San Jose, CA); Farhad Razavi (San Jose, CA)
Assignee: LITTELFUSE, INC.
H01L27/0288
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Quick Facts
Patent No.
US 9,082,622
App. No.
13/115,068
Granted
Jul 14, 2015
Kind
B2
Abstract

Ferroic circuit elements that include a set of conductive structures that are at least partially embedded within a ferroic medium are disclosed. The ferroic medium may be a voltage switched dielectric material that includes ferroic particles in accordance with various embodiments. A ferroic circuit element may be at least partially embedded within a substrate in accordance with embodiments of the current invention as an embedded ferroic circuit element. An embedded ferroic circuit element that is an inductor in accordance with embodiments of the current invention may be denoted as an embedded ferroic inductor. An embedded ferroic circuit element that is a capacitor in accordance with embodiments of the current invention may be denoted as an embedded ferroic capacitor.

Claims (38)

1. A ferroic circuit element comprising:

a layer of ferroic voltage switched dielectric (VSD) material, the ferroic VSD material to exhibit nonlinear resistance as a function of voltage;

a first conductive structure and a second conductive structure, the first and second conductive structures positioned directly on top of the layer of ferroic VSD material such that bottom portions of the first and second conductive structures are at least partially embedded within the layer of ferroic VSD material, the first and second conductive structures arranged in a horizontal plane that is parallel to the layer of ferroic VSD material, the first and second conductive structures separated by a first horizontal gap;

a substrate; and

a conductive plane in contact with the layer of ferroic VSD material,

wherein the first and second conductive structures and the ferroic VSD material cause the ferroic circuit element to exhibit a frequency-dependent impedance,

wherein the ferroic VSD material, the first and second conductive structures, and the conductive plane are at least partially disposed within the substrate,

wherein the conductive plane is disposed between the layer of ferroic VSD material and the substrate, and

wherein each of the first and second conductive structures form a capacitor comprising two or more layers of conductors and ferroic VSD material interspersed between each of the conductors, wherein each of the two or more layers of conductors are substantially parallel and substantially overlay one another.

2. The ferroic circuit element of claim 1 , wherein the first and second conductive structures comprise at least two plates, and the ferroic circuit element exhibits a capacitive characteristic.

3. The ferroic circuit element of claim 1 , wherein the substrate is a PCB or the package of an electronic component.

4. The ferroic circuit element of claim 1 , wherein the ferroic circuit element protects an electronic component against an ESD event.

5. The ferroic circuit element of claim 4 , wherein the ferroic circuit and the electronic component are disposed within a mobile phone, electronic tablet, electronic reader, mobile computer, desktop computer, server computer, television set, music player, personal health management device, light emitting diode (LED), or device comprising an LED.

6. An electronic device comprising a ferroic circuit element, the ferroic circuit element comprising:

a layer of ferroic voltage switched dielectric (VSD) material, the ferroic VSD material to exhibit nonlinear resistance as a function of voltage;

a first conductive structure and a second conductive structure, the first and second conductive structures positioned directly on top of the layer of ferroic VSD material such that bottom portions of the first and second conductive structures are at least partially embedded within the layer of ferroic VSD material, the first and second conductive structures arranged in a horizontal plane that is parallel to the layer of ferroic VSD material, the first and second conductive structures separated by a first horizontal gap;

a substrate; and

a conductive plane in contact with the layer of ferroic VSD material,

wherein the first and second conductive structures and the ferroic VSD material cause the ferroic circuit element to exhibit a frequency-dependent impedance,

wherein the ferroic VSD material, the first and second conductive structures, and the conductive plane are at least partially disposed within the substrate, wherein the conductive plane is disposed between the layer of ferroic VSD material and the substrate, and

wherein each of the first and second conductive structures form a capacitor comprising two or more layers of conductors and ferroic VSD material interspersed between each of the conductors, wherein each of the two or more layers of conductors are substantially parallel and substantially overlay one another.

7. The electronic device of claim 6 , wherein the first and second conductive structures includes at least two capacitor plates.

8. The electronic device of claim 6 , wherein the first and second conductive structures includes an active device.

9. The electronic device of claim 6 , wherein the electronic device is a mobile phone, electronic tablet, electronic reader, mobile computer, desktop computer, server computer, television set, music player, personal health management device, light emitting diode (LED), or device comprising an LED.

10. A ferroic circuit element comprising:

a ferroic medium layer, the ferroic medium layer to exhibit nonlinear resistance as a function of voltage;

a first conductive structure and a second conductive structure, the first and second conductive structures positioned directly on top of the ferroic medium layer such that bottom portions of the first and second conductive structures are at least partially embedded within the ferroic medium layer, the first and second conductive structures arranged in a horizontal plane that is parallel to the ferroic medium layer, the first and second conductive structures separated by a first horizontal gap;

a substrate; and

a conductive plane in contact with the ferroic medium layer,

wherein the ferroic medium layer, the first and second conductive structures, and the conductive plane are at least partially embedded within the substrate,

wherein the conductive plane is disposed between the ferroic medium layer and the substrate, and

wherein each of the first and second conductive structures form a capacitor comprising two or more layers of conductors and ferroic VSD material interspersed between each of the conductors, wherein each of the two or more layers of conductors are substantially parallel and substantially overlay one another.

11. The ferroic circuit element of claim 10 , wherein the first and second conductive structures set of conductive structures comprise at least two plates, and the ferroic circuit element exhibits a capacitive characteristic.

12. The ferroic circuit element of claim 10 , wherein the substrate is a PCB or the package of an electronic component.

13. The ferroic circuit element of claim 10 , wherein the ferroic circuit element protects an electronic component against an ESD event.

14. The ferroic circuit element of claim 13 , wherein the ferroic circuit element and the electronic component are disposed within a mobile phone, electronic tablet, electronic reader, mobile computer, desktop computer, server computer, television set, music player, video display, personal health management device, light emitting diode (LED), or device comprising an LED.

15. The ferroic circuit element of claim 10 , wherein the first and second conductive structures extend horizontally in a plane parallel with the planes of the ferroic medium layer and the conductive plane.

16. The ferroic circuit element of claim 11 , wherein the first and second conductive structures extend horizontally in a plane parallel with the planes of the ferroic medium layer and the conductive plane.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 23, 2014
From: SHOCKING TECHNOLOGIES, INC.
To: LITTELFUSE, INC.
Reel/Frame 032123/0747 →
SECURITY AGREEMENT Recorded Nov 19, 2012
From: SHOCKING TECHNOLOGIES, INC.
To: LITTLEFUSE, INC.
Reel/Frame 029339/0761 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 25, 2011
From: FLEMING, ROBERT; GRAYDON, BHRET; VASQUEZ, DANIEL; WU, JUNJUN; RAZAVI, FARHAD
To: SHOCKING TECHNOLOGIES, INC.
Reel/Frame 026337/0663 →
Continuity (6)
Continuation In Part 13096860 · Apr 28, 2011
Continuation In Part 13035791 · Feb 25, 2011
Provisional Application 61347540 · May 24, 2010
Provisional Application 61328965 · Apr 28, 2010
Provisional Application 61308825 · Feb 26, 2010
Related Publication 20110317318A1 · Dec 29, 2011