Amorphous silicon film formation method and amorphous silicon film formation apparatus

1. An amorphous silicon film formation method comprising:

transferring a base in a process chamber;

heating the base in the process chamber;

setting a process pressure inside the process chamber by evacuating an interior of the process chamber;

forming a seed layer on a surface of the base by flowing aminosilane-based gas in the process chamber under a process condition in which the aminosilane-based gas is not thermally decomposed and adsorbing the aminosilane-based gas onto the surface of the base, the process condition having a first temperature; and

forming an amorphous silicon film on the seed layer by heating the base at a second temperature higher than the first temperature, flowing silane-based gas containing no amino group in the process chamber, and thermally decomposing the silane-based gas containing no amino group;

wherein the forming of the seed layer and the forming of the amorphous silicon film are successively performed in the process chamber.

2. The amorphous silicon film formation method of claim 1 , wherein the second temperature is lower than 450° C. at which the aminosilane-based gas is not thermally decomposed.

3. The amorphous silicon film formation method of claim 2 , wherein the second temperature is 400° C.

4. The amorphous silicon film formation method of claim 1 , wherein the second temperature is 500° C.

5. The amorphous silicon film formation method of claim 1 , wherein the aminosilane-based gas is selected from among gases containing at least one of:

BAS (butylaminosilane);

BTBAS (bis(tertiary butyl aminosilane));

DMAS (dimethyl aminosilane);

BDMAS (bis(dimethyl aminosilane));

TDMAS (tris(dimethyl aminosilane));

DEAS (diethyl aminosilane);

BDEAS (bis(diethyl aminosilane));

DPAS (dipropyl aminosilane); and

DIPAS (diisopropyl aminosilane), and

the silane-based gas containing no amino group is selected from among gases containing at least one of:

SiH 4 ;

Si 2 H 6 ;

trisilane (Si 3 H 8 );

tetrasilane (Si 4 H 10 );

pentasilane (Si 5 H 12 );

hexasilane (Si 6 H 14 );

heptasilane (Si 7 H 16 );

cyclotrisilane (Si 3 H 6 );

cyclotetrasilane (Si 4 H 8 );

cyclopentasilane (Si 5 H 10 );

cyclohexasilane (Si 6 H 12 ); and

cycloheptasilane (Si 7 H 14 ).

6. The amorphous silicon film formation method of claim 5 , wherein the aminosilane-based gas is DIPAS (diisopropyl aminosilane) and the silane-based gas containing no amino group is any one of SiH 4 and Si 2 H 6 .

7. The amorphous silicon film formation method of claim 1 , wherein a thickness of the seed layer is a single atomic layer level.

8. The amorphous silicon film formation method of claim 7 , wherein the thickness of the seed layer is from 0.1 nm to 0.3 nm.

9. The amorphous silicon film formation method of claim 1 , wherein a silicon oxide film or a silicon nitride film is formed on the surface of the base.

10. An amorphous silicon film formation apparatus comprising:

a process chamber which houses an object to be processed having a base;

a heating device which heats the base housed in the process chamber;

an aminosilane-based gas supply unit which supplies an aminosilane-based gas into the process chamber;

an silane-based gas supply unit which supplies an silane-based gas containing no amino group into the process chamber;

an exhauster which evacuates an interior of the process chamber; and

an controller which controls the heating device, the aminosilane-based gas supply unit, the silane-based gas supply unit, and the exhauster to perform a forming of a seed layer and a forming of an amorphous silicon film successively in the process chamber,

wherein, in the forming of the seed layer, the seed layer is formed on a surface of the base by flowing the aminosilane-based gas in the process chamber under a process condition in which the aminosilane-based gas is not thermally decomposed and adsorbing the aminosilane-based gas onto the surface of the base, the process condition having a first temperature, and

wherein, in the forming of the amorphous silicon film, the amorphous silicon film is formed on the seed layer by heating the base at a second temperature higher than the first temperature, flowing the silane-based gas containing no amino group in the process chamber, and thermally decomposing the silane-based gas containing no amino group.

11. The amorphous silicon film formation apparatus of claim 10 , wherein the second temperature is lower than 450° C. at which the aminosilane-based gas is not thermally decomposed.

12. The amorphous silicon film formation apparatus of claim 11 , wherein the second temperature is 400° C.

13. The amorphous silicon film formation apparatus of claim 10 , wherein the second temperature is 500° C.

14. The amorphous silicon film formation apparatus of claim 10 , wherein the aminosilane-based gas is selected from among gases containing at least one of:

BAS (butylaminosilane);

BTBAS (bis(tertiary butyl aminosilane));

DMAS (dimethyl aminosilane);

BDMAS (bis(dimethyl aminosilane));

TDMAS (tris(dimethyl aminosilane));

DEAS (diethyl aminosilane);

BDEAS (bis(diethyl aminosilane));

DPAS (dipropyl aminosilane); and

DIPAS (diisopropyl aminosilane), and

the silane-based gas containing no amino group is selected from among gases containing at least one of:

SiH 4 ;

Si 2 H 6 ;

trisilane (Si 3 H 8 );

tetrasilane (Si 4 H 10 );

pentasilane (Si 5 H 12 );

hexasilane (Si 6 H 14 );

heptasilane (Si 7 H 16 );

cyclotrisilane (Si 3 H 6 );

cyclotetrasilane (Si 4 H 8 );

cyclopentasilane (Si 5 H 10 );

cyclohexasilane (Si 6 H 12 ); and

cycloheptasilane (Si 7 H 14 ).

15. The amorphous silicon film formation apparatus of claim 14 , wherein the aminosilane-based gas is DIPAS (diisopropyl aminosilane) and the silane-based gas containing no amino group is any one of SiH 4 and Si 2 H 6 .

16. The amorphous silicon film formation apparatus of claim 10 , wherein a thickness of the seed layer is a single atomic layer level.

17. The amorphous silicon film formation apparatus of claim 16 , wherein the thickness of the seed layer is from 0.1 nm to 0.3 nm.

18. The amorphous silicon film formation apparatus of claim 10 , wherein a silicon oxide film or a silicon nitride film is formed on the surface of the base.