Method of forming a semiconductor device comprising titanium silicon oxynitride
View Patent ↗A method of making a semiconductor device includes forming a high-k dielectric layer over a substrate; and forming a titanium nitride layer over the high-k dielectric layer. The method further includes performing a silicon treatment on the titanium nitride layer to form at least one silicon monolayer over the titanium nitride layer. The method further includes annealing the semiconductor device to form a TiSiON layer over a remaining portion of the titanium nitride layer.
1. A method of making a semiconductor device, the method comprising:
forming a high-k dielectric layer over a substrate;
forming a titanium nitride layer over the high-k dielectric layer;
performing a silicon treatment on the titanium nitride layer to form at least one silicon monolayer over the titanium nitride layer; and
annealing the semiconductor device to form a TiSiON layer over a remaining portion of the titanium nitride layer.
2. The method of claim 1 , wherein forming the at least one silicon monolayer comprises forming a number of silicon monolayers ranging from about 1 to about 5.
3. The method of claim 1 , wherein performing the silicon treatment comprises performing the silicon treatment in the presence of at least one of silane (SiH 4 ), disilane (Si 2 H 6 ), or silicon tetrachloride (SiCl 4 ).
4. The method of claim 1 , wherein performing the silicon treatment comprises performing the silicon treatment at a temperature ranging from about 300° C. to about 420° C.
5. The method of claim 1 , wherein performing the silicon treatment comprises performing the silicon treatment for a duration ranging from about 10 seconds (s) to about 100 s.
6. The method of claim 1 , wherein annealing the semiconductor device comprises annealing the semiconductor device to a temperature ranging from about 600° C. to about 1000° C.
7. The method of claim 1 , wherein annealing the semiconductor device comprises annealing the semiconductor device in the presence of an oxygen-containing gas.
8. The method of claim 1 , wherein annealing the semiconductor device comprises annealing the semiconductor device for a duration ranging from about 0.1 s. to about 10 s.
9. The method of claim 1 , further comprising forming a metal gate over the TiSiON layer.
10. The method of claim 1 , wherein forming the metal gate comprises forming the metal gate comprising at least one of titanium aluminum, titanium aluminum carbide, or tantalum aluminum carbide.
11. A method of making a semiconductor device, the method comprising:
forming a high-k dielectric layer over a substrate;
forming a titanium nitride layer over the high-k dielectric layer;
forming at least one silicon monolayer over the titanium nitride layer; and
reacting the at least one silicon monolayer with the titanium nitride layer to form a TiSiON layer.
12. The method of claim 11 , wherein forming the at least one silicon monolayer comprises a number of silicon monolayers ranging from about 1 to about 5.
13. The method of claim 11 , wherein forming the at least one silicon monolayer comprises forming the at least on silicon monolayer using of at least one of silane (SiH 4 ), disilane (Si 2 H 6 ), or silicon tetrachloride (SiCl 4 ).
14. The method of claim 11 , wherein reacting the at least one silicon monolayer with the titanium nitride layer comprises annealing the semiconductor device at a temperature ranging from about 600° C. to about 1000° C.
15. The method of claim 11 , wherein reacting the at least one silicon monolayer with the titanium nitride layer comprises forming the TiSiON layer having a thickness ranging from about 3 angstroms to about 5 angstroms.
16. The method of claim 11 , further comprising forming an interfacial layer over the substrate, wherein the interfacial layer is between the high-k dielectric layer and the substrate.
17. The method of claim 11 , further comprising forming a metal gate over the TiSiON layer, wherein the metal gate comprises at least one of titanium aluminum, titanium aluminum carbide, or tantalum aluminum carbide.
18. A method of making a semiconductor device, the method comprising:
forming a high-k dielectric layer over a substrate;
forming a titanium nitride layer over the high-k dielectric layer;
performing a silicon treatment on the titanium nitride layer to form at least one silicon monolayer over the titanium nitride layer;
annealing the semiconductor device to form a TiSiON layer over a remaining portion of the titanium nitride layer; and
forming a metal gate over the TiSiON layer, wherein the metal gate comprises aluminum.
19. The method of claim 18 , wherein forming the at least one silicon monolayer comprises forming a number of silicon monolayers ranging from about 1 to about 5.
20. The method of claim 18 , wherein performing the silicon treatment comprises performing the silicon treatment in the presence of at least one of silane (SiH 4 ), disilane (Si 2 H 6 ), or silicon tetrachloride (SiCl 4 ).