Bipolar junction transistors with an air gap in the shallow trench isolation
Device structures, fabrication methods, and design structures for a bipolar junction transistor. A trench isolation region is formed in a substrate. The trench isolation region is coextensive with a collector in the substrate. A base layer is formed on the collector and on a first portion of the trench isolation region. A dielectric layer is formed on the base layer and on a second portion of the trench isolation region peripheral to the base layer. After the dielectric layer is formed, the trench isolation region is at least partially removed to define an air gap beneath the dielectric layer and the base layer.
1. A method of fabricating a bipolar junction transistor, the method comprising:
forming a trench isolation region in a substrate and coextensive with a collector in the substrate;
forming a base layer on the collector and on a first portion of the trench isolation region;
forming an emitter on the base layer;
forming a first dielectric layer on the base layer and on a second portion of the trench isolation region peripheral to the base layer; and
after the first dielectric layer, the base layer, and the emitter are formed, at least partially removing the first portion and the second portion of the trench isolation region to define an air gap beneath the first dielectric layer and the base layer.
2. The method of claim 1 wherein forming the first dielectric layer on the base layer and on the second portion of the trench isolation region comprises:
depositing a first dielectric material with tensile stress or compressive stress to form the first dielectric layer,
wherein the tensile stress or the compressive stress is transferred from the first dielectric layer to the base layer, and the air gap releases the base layer to be strained by the tensile stress or the compressive stress transferred from the stress layer.
3. The method of claim 1 wherein at least partially removing the first portion and the second portion of the trench isolation region to define the air gap beneath the first dielectric layer and the base layer comprises:
forming a plurality of openings extending through the first dielectric layer to the second portion of the trench isolation region; and
directing an etchant through the openings to remove the first portion and the second portion of the trench isolation region.
4. The method of claim 3 wherein the etchant is a wet chemical etchant configured to etch a second dielectric material comprising the trench isolation region selective to the first dielectric material comprising the first dielectric layer.
5. The method of claim 3 further comprising:
after the etchant is directed through the openings to remove the first portion and the second portion of the trench isolation region, forming a second dielectric layer on the first dielectric layer that occludes the openings; and
forming a contact extending through the second dielectric layer to the base layer.
6. The method of claim 1 wherein forming the base layer on the collector and on the first portion of the trench isolation region comprises:
forming an intrinsic base layer on at least the collector; and
forming an extrinsic base layer on the first portion of the trench isolation region.
7. The method of claim 6 wherein the air gap underlies an entirety of a lower surface of the extrinsic base layer.
8. The method of claim 6 wherein the trench isolation region is formed before the intrinsic base layer and the extrinsic base layer are formed, and the trench isolation region is at least partially removed after the intrinsic base layer and the extrinsic base layer are formed.
9. The method of claim 8 wherein the trench isolation region is formed before the emitter is formed.
10. The method of claim 1 wherein the first portion and the second portion of the trench isolation region are completely removed.
11. The method of claim 2 wherein the dielectric material of the first dielectric layer is comprised of silicon nitride.