Semiconductor device and process for fabricating the same
A thin stacked semiconductor device has a plurality of circuits that are laminated and formed sequentially in a specified pattern to form a multilayer wiring part. At the stage for forming the multilayer wiring part, a filling electrode is formed on the semiconductor substrate such that the surface is covered with an insulating film, a post electrode is formed on specified wiring at the multilayer wiring part, a first insulating layer is formed on one surface of the semiconductor substrate, the surface of the first insulating layer is removed by a specified thickness to expose the post electrode, and the other surface of the semiconductor substrate is ground to expose the filling electrode and to form a through-type electrode. A second insulating layer if formed on one surface of the semiconductor substrate while exposing the forward end of the through-type electrode, and bump electrodes are formed on both electrodes.
1. A semiconductor device comprising:
a semiconductor substrate having a first main surface, and a second main surface opposing the first main surface, the first main surface comprising a recess portion filled with an oxide film;
a wiring portion over the first main surface of the semiconductor substrate;
a through-type electrode having one end connected to the wiring portion, the through-type electrode penetrating through the oxide film and penetrating through the semiconductor substrate from a bottom surface of the recess portion to the second main surface, the through-type electrode connecting the first main surface and the second main surface of the semiconductor substrate; and
a protruding electrode on the second main surface and connected to another end of the through-type electrode.
2. The semiconductor device according to claim 1 , further comprising a first circuit element at the first main surface of the semiconductor substrate, wherein the wiring portion is connected to the first circuit element.
3. The semiconductor device according to claim 1 , wherein the oxide film is an element isolation oxide film.
4. The semiconductor device according to claim 1 , further comprising an insulating layer that covers the second main surface of the semiconductor substrate.