Methods of forming an improved via to contact interface by selective formation of a conductive capping layer

1. A method, comprising:

forming an opening in at least one layer of insulating material positioned above a metal contact that is conductively coupled to a transistor device so as to thereby expose at least a portion of said metal contact;

performing a selective deposition process to selectively form a metal layer in said opening and on said metal contact, wherein said metal layer is not formed on a substantial portion of sidewalls of said opening during said selective deposition process;

after selectively forming said metal layer on said metal contact, performing at least one anneal process to cause movement of a material of said metal layer;

after performing said at least one anneal process, depositing at least one conductive material above said selectively formed metal layer so as to over-fill said opening; and

performing at least one planarization process so as to remove excess materials positioned outside of said opening and thereby define a conductive via that is positioned in said opening and conductively coupled to said metal contact.

2. The method of claim 1 , wherein said metal contact is conductively coupled to one of a source region, a drain region or a gate electrode of said transistor device.

3. The method of claim 1 , wherein said metal contact has a void formed therein.

4. The method of claim 3 , wherein said selective deposition process is performed such that said selectively formed metal layer substantially fills at least an upper portion of said void in said metal contact.

5. The method of claim 1 , wherein said metal contact as initially formed is substantially free of voids.

6. The method of claim 5 , wherein said selective deposition process is performed such that said selectively formed metal layer is positioned above said metal contact that is substantially free of voids.

7. The method of claim 1 , wherein performing said at least one anneal process comprises performing said at least one anneal process at a temperature that falls with the range of 200-400° C.

8. The method of claim 1 , wherein said selectively formed metal layer is comprised of tantalum, cobalt or ruthenium.

9. The method of claim 1 , wherein depositing said at least one conductive material above said selectively formed metal layer so as to over-fill said opening comprises depositing a copper-based material above said selectively formed metal layer so as to over-fill said opening.

10. The method of claim 1 , wherein depositing said at least one conductive material above said selectively formed metal layer so as to over-fill said opening comprises forming at least one conductive barrier layer and at least one conductive adhesion layer in said opening, wherein said conductive barrier layer is comprised of tantalum nitride and said conductive adhesion layer comprises a layer of tantalum.

11. The method of claim 1 , wherein said selective deposition process is performed such that sidewalls of said opening in said at least one layer of insulating material along an entire vertical height of said conductive via are substantially free of said selectively formed metal layer.

12. The method of claim 11 , wherein performing said at least one anneal process cause said selectively formed metal layer to fill at least an upper portion of a void in said conductive contact.

13. A method, comprising:

forming at least one layer of insulating material above a metal contact that is conductively coupled to a transistor device, wherein said metal contact has a void formed therein;

forming an opening in said at least one layer of insulating material so as to expose at least a portion of said metal contact and said void;

performing a selective deposition process to selectively form a metal layer in said opening and on said metal contact so as to at least partially fill said void in said metal contact, wherein said metal layer is not formed on a substantial portion of sidewalls of said opening during said selective deposition process;

after selectively forming said metal layer on said metal contact, performing at least one anneal process at a temperature that falls with the range of 200-400° C.;

after performing said at least one anneal process, depositing at least one conductive material above said selectively formed metal layer so as to over-fill said opening; and

performing at least one planarization process so as to remove excess materials positioned outside of said opening and thereby define a conductive via that is positioned in said opening and conductively coupled to said metal contact, wherein said selective deposition process is performed such that sidewalls of said opening in said at least one layer of insulating material along an entire vertical height of said conductive via are substantially free of said selectively formed metal layer.

14. The method of claim 13 , wherein said at least one anneal process is performed for a duration of at least 1-60 minutes.

15. The method of claim 13 , wherein depositing said at least one conductive material above said selectively formed metal layer comprises depositing a copper-based material above said selectively formed metal layer so as to over-fill said opening.

16. The method of claim 13 , wherein performing said at least one anneal process causes said selectively formed metal layer to fill at least an upper portion of said void in said metal contact.

17. The method of claim 13 , wherein selectively said forming said metal layer on said metal contact substantially fills at least an upper portion of said void.