Light emitting device
A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.
1. A light-emitting device including a pixel portion, the pixel portion comprising:
a first transistor and a second transistor each including a channel formation region, a source, and a drain;
a first insulating film over the channel formation region of the first transistor and the channel formation region of the second transistor;
a first gate electrode over and in contact with the first insulating film, the first gate electrode overlapping with the channel formation region of the first transistor;
a second gate electrode over and in contact with the first insulating film, the second gate electrode overlapping with the channel formation region of the second transistor;
a second insulating film over and in contact with the first gate electrode and the second gate electrode;
a first wiring over and in contact with the second insulating film, the first wiring including a region which overlaps with the second gate electrode, wherein a capacitor comprises the region and the second gate electrode overlapping with the region;
a third insulating film over the first wiring;
a pixel electrode over and in contact with the third insulating film, the pixel electrode being electrically connected to one of the source and the drain of the second transistor; and
a second wiring over and in contact with the third insulating film,
wherein the second wiring does not overlap with the region.
2. The light-emitting device according to claim 1 , further comprising:
a conductive layer over and in contact with the second insulating film, the conductive layer being electrically connected to one of the source and the drain of the first transistor,
wherein the channel formation region of the first transistor includes a first region,
wherein the conductive layer includes a second region,
wherein the first gate electrode includes a third region, and
wherein the first region, the second region, and the third region overlap with one another.
3. The light-emitting device according to claim 1 ,
wherein the source includes a source region, and
wherein the drain includes a drain region.
4. The light-emitting device according to claim 1 , further comprising:
a semiconductor layer under the first insulating film, the semiconductor layer overlapping with the region.
5. The light-emitting device according to claim 1 , wherein the first wiring includes another region where does not overlap with the second gate electrode.
6. The light-emitting device according to claim 1 , wherein the second gate electrode is electrically connected to one of the source and the drain of the first transistor.
7. The light-emitting device according to claim 1 , wherein the second wiring is a capacitance wiring.
8. The light-emitting device according to claim 1 , wherein the region does not overlap with the channel formation region of the second transistor.
9. A display module comprising:
the light-emitting device according to claim 1 ; and
an FPC connected to the light-emitting device.
10. An electric apparatus comprising:
the light-emitting device according to claim 1 ; and
at least one of a battery, an antenna, an audio input unit, a speaker unit, and an image receiving unit.
11. A light-emitting device including a pixel portion, the pixel portion comprising:
a plastic substrate;
a first transistor and a second transistor over the plastic substrate, the first transistor and the second transistor each including a channel formation region, a source, and a drain;
a first insulating film over the channel formation region of the first transistor and the channel formation region of the second transistor;
a first gate electrode over and in contact with the first insulating film, the first gate electrode overlapping with the channel formation region of the first transistor;
a second gate electrode over and in contact with the first insulating film, the second gate electrode overlapping with the channel formation region of the second transistor;
a second insulating film over and in contact with the first gate electrode and the second gate electrode;
a first wiring over and in contact with the second insulating film, the first wiring including a region which overlaps with the second gate electrode, wherein a capacitor comprises the region and the second gate electrode overlapping with the region;
a third insulating film over the first wiring;
a pixel electrode over and in contact with the third insulating film, the pixel electrode being electrically connected to one of the source and the drain of the second transistor; and
a second wiring over and in contact with the third insulating film,
wherein the second wiring does not overlap with the region.
12. The light-emitting device according to claim 11 , further comprising:
a conductive layer over and in contact with the second insulating film, the conductive layer being electrically connected to one of the source and the drain of the first transistor,
wherein the channel formation region of the first transistor includes a first region,
wherein the conductive layer includes a second region,
wherein the first gate electrode includes a third region, and
wherein the first region, the second region, and the third region overlap with one another.
13. The light-emitting device according to claim 11 ,
wherein the source includes a source region, and
wherein the drain includes a drain region.
14. The light-emitting device according to claim 11 , further comprising:
a semiconductor layer under the first insulating film, the semiconductor layer overlapping with the region.
15. The light-emitting device according to claim 11 , wherein the first wiring includes another region where does not overlap with the second gate electrode.
16. The light-emitting device according to claim 11 , wherein the second gate electrode is electrically connected to one of the source and the drain of the first transistor.
17. The light-emitting device according to claim 11 , wherein the second wiring is a capacitance wiring.
18. The light-emitting device according to claim 11 , wherein the region does not overlap with the channel formation region of the second transistor.
19. A display module comprising:
the light-emitting device according to claim 11 ; and
an FPC connected to the light-emitting device.
20. An electric apparatus comprising:
the light-emitting device according to claim 11 ; and
at least one of a battery, an antenna, an audio input unit, a speaker unit, and an image receiving unit.