Pre-test power-optimized bin reassignment following selective voltage binning
Disclosed is a method wherein selective voltage binning and leakage power screening of integrated circuit (IC) chips are performed. Additionally, pre-test power-optimized bin reassignments are made on a chip-by-chip basis. Specifically, a leakage power measurement of an IC chip selected from a voltage bin can is compared to a bin-specific leakage power screen value of the next slower voltage bin. If the leakage power measurement is higher, the IC chip will be left in the voltage bin to which it is currently assigned. If the leakage power measurement is lower, the IC chip will be reassigned to that next slower voltage bin. These processes can be iteratively repeated until no slower voltage bins are available or the IC chip cannot be reassigned. IC chips can subsequently be tested according to testing parameters, including the minimum test voltages, associated with the voltage bins to which they are finally assigned.
1. A method comprising:
performing selective voltage binning comprising assigning integrated circuit chips to voltage bins, said voltage bins comprising at least:
a first voltage bin associated with a first performance range and a first leakage power screen value;
a second voltage bin associated with a second performance range that is slower than said first performance range and a second leakage power screen value that is lower than said first leakage power screen value; and,
a third voltage bin associated with a third performance range that is slower than said second performance range and a third leakage power screen value that is lower than said second leakage power screen value;
reassigning an integrated circuit chip from said first voltage bin to said second voltage bin when a leakage power measurement taken from said integrated circuit chip is less than both said first leakage power screen value and said second leakage power screen value; and,
after said reassigning of said integrated circuit chip from said first voltage bin to said second voltage bin, determining whether to further reassign said integrated circuit chip from said second voltage bin to said third voltage bin based on a comparison of said third leakage power screen value to said leakage power measurement,
said integrated circuit chip being left in said second voltage bin when said leakage power measurement is equal to or greater than said third leakage power screen value, and
said integrated circuit chip being reassigned from said second voltage bin to said third voltage bin when said leakage power measurement is less than said third leakage power screen value.
2. The method of claim 1 ,
said first voltage bin being associated with first testing parameters, said second voltage bin being associated with second testing parameters and said third voltage bin being associated with third testing parameters, and
said method further comprising:
when said integrated circuit chip is left in said second voltage bin, testing said integrated circuit chip using said second testing parameters; and,
when said integrated circuit chip is reassigned to said third voltage bin, testing said integrated circuit chip using said third testing parameters.
3. The method of claim 2 , said first testing parameters specifying a first minimum test voltage, said second testing parameters specifying a second minimum test voltage that is higher than said first minimum test voltage, and said third testing parameters specifying a third minimum test voltage that is higher than said second minimum voltage.
4. The method of claim 2 , further comprising making a pass/fail determination regarding said integrated circuit chip based on results of said testing.
5. The method of claim 1 , further comprising:
developing a design for said integrated circuit chips;
manufacturing said integrated circuit chip according to said design; and,
taking measurements from said integrated circuit chips, said measurements comprising at least performance measurements and leakage power measurements.
6. A computer program product comprising a non-transient computer readable storage medium having program instructions embodied therewith, said program instructions being executable by a computer to cause said computer to perform a method, said method comprising:
performing selective voltage binning comprising assigning integrated circuit chips having a same design to voltage bins, said voltage bins comprising at least:
a first voltage bin associated with a first performance range and a first leakage power screen value;
a second voltage bin associated with a second performance range that is slower than said first performance range and a second leakage power screen value that is lower than said first leakage power screen value; and,
a third voltage bin associated with a third performance range that is slower than said second performance range and a third leakage power screen value that is lower than said second leakage power screen value;
reassigning an integrated circuit chip from said first voltage bin to said second voltage bin when a leakage power measurement taken from said integrated circuit chip is less than both said first leakage power screen value and said second leakage power screen value; and,
after said reassigning of said integrated circuit chip from said first voltage bin to said second voltage bin, determining whether to further reassign said integrated circuit chip from said second voltage bin to said third voltage bin based on a comparison of said third leakage power screen value to said leakage power measurement,
said integrated circuit chip being left in said second voltage bin when said leakage power measurement is equal to or greater than said third leakage power screen value, and
said integrated circuit chip being reassigned from said second voltage bin to said third voltage bin when said leakage power measurement is less than said third leakage power screen value.
7. The computer program product of claim 6 ,
said first voltage bin being associated with first testing parameters and said second voltage bin being associated with second testing parameters, and
said method further comprising, after reassigning said integrated circuit chip from said first voltage bin to said second voltage bin, testing said integrated circuit chip using said second testing parameters.
8. The computer program product of claim 7 , said first testing parameters specifying a first minimum test voltage and said second testing parameters specifying a second minimum test voltage that is higher than said first minimum test voltage.
9. The computer program product of claim 7 , said method further comprising making a pass/fail determination regarding said integrated circuit chip based on results of said testing.
10. The computer program product of claim 6 , said method further comprising:
developing a design for said integrated circuit chips;
manufacturing said integrated circuit chip according to said design; and,
taking measurements from said integrated circuit chips, said measurements comprising at least performance measurements and leakage power measurements.
11. The computer program product of claim 6 , said method further comprising, before said determining of whether to reassign said integrated circuit from said first voltage bin to said second voltage bin, determining whether to scrap said integrated circuit chip based on said comparison of said first leakage power screen value to said leakage power measurement.