Manufacturing method of semiconductor device and semiconductor device thereof
A semiconductor device structure and a method for manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a method for manufacturing a semiconductor device that comprises ordering and performing processing steps in a manner that prevents warpage deformation from occurring to a wafer and/or die due to mismatching thermal coefficients.
1. A method of manufacturing a semiconductor device, the method comprising:
coupling a wafer support system (WSS) on a first side of an interposer, where the interposer comprises contact structures on the first side of the interposer and the interposer comprises a second side on a temporary substrate;
removing the temporary substrate;
coupling a semiconductor die and the second side of the interposer;
encapsulating the semiconductor die with an encapsulant; and
removing the WSS,
wherein the second side of the interposer and the semiconductor die are covered by the encapsulant.
2. The method of claim 1 , wherein prior to said removing the temporary substrate, the second side of the interposer is directly on the temporary substrate.
3. The method of claim 1 , wherein said coupling the semiconductor die is performed after said coupling the WSS.
4. The method of claim 1 , wherein said encapsulating the semiconductor die is performed after said coupling the semiconductor die and the second side of the interposer.
5. The method of claim 1 , wherein the contact structures comprise conductive bumps.
6. The method of claim 1 , wherein said coupling the semiconductor die and the second side of the interposer comprises directly coupling the semiconductor die and the second side of the interposer without a separate underfill between the semiconductor die and the second side of the interposer.
7. The method of claim 1 , comprising forming the interposer by, at least in part:
forming a dielectric layer comprising openings to the substrate; and
forming a conductive layer in the openings to the substrate.
8. The method of claim 1 , wherein the temporary substrate comprises a glass carrier.
9. A method of manufacturing a semiconductor device, the method comprising:
coupling a wafer support system (WSS) on a first side of an interposer, where the interposer comprises contact structures on the first side of the interposer and the interposer comprises a second side on a temporary substrate;
removing the temporary substrate;
coupling a semiconductor die to the second side of the interposer;
encapsulating the second side of the interposer and the semiconductor die with an encapsulant; and
removing the WSS.
10. The method of claim 9 , wherein the contact structures comprise copper.
11. The method of claim 9 , wherein the contact structures comprise under bump metallization.
12. The method of claim 9 , comprising prior to said encapsulating, forming an underfill between the semiconductor die and the second side of the interposer.
13. The method of claim 9 , comprising thinning the encapsulant.
14. The method of claim 13 , comprising thinning the encapsulant to expose the semiconductor die.
15. The method of claim 9 , wherein the temporary substrate comprises a silicon wafer.
16. A method of manufacturing a semiconductor device, the method comprising:
coupling a wafer support system (WSS) on a first side of an interposer, where the interposer comprises contact structures on the first side of the interposer and the interposer comprises a second side on a temporary substrate, where the second side of the interposer is opposite the first side of the interposer;
removing the temporary substrate;
coupling a semiconductor die to the second side of the interposer;
forming conductive pillars on the second side of the interposer, the conductive pillars extending farther from the second side of the interposer than the semiconductor die; and
removing the WSS.
17. The method of claim 16 , comprising encapsulating the second side of the interposer, the semiconductor die, and the conductive pillars with an encapsulant.
18. The method of claim 17 , comprising thinning the encapsulant to expose the conductive pillars but not the semiconductor die.
19. The method of claim 17 , wherein the conductive pillars are exposed from the encapsulant and comprising forming conductive layers on the exposed conductive pillars.
20. The method of claim 16 , wherein the conductive pillars comprise copper pillars.