Textured devices
Epitaxial growth methods and devices are described that include a textured surface on a substrate in a liquid crystal device. Geometry of the textured surface provides a organization of a liquid crystal media.
1. A liquid crystal device, comprising:
a semiconductor substrate having a first surface;
a number of regularly patterned features formed within a recessed portion in the first surface; and
a liquid crystal media located within the recessed portion, and in contact with the regularly patterned features.
2. The liquid crystal device of claim 1 , wherein the number of regularly patterned features includes a number of angled features formed in the first surface, wherein the angled features are angled with respect to a second surface of the substrate that is opposite and substantially parallel to the first surface.
3. The liquid crystal device of claim 2 , wherein the number of angled features includes an array of pyramid shaped features.
4. The liquid crystal device of claim 2 , wherein the number of angled features are asymmetric.
5. The liquid crystal device of claim 2 , wherein the number of regularly patterned features includes a number of linear structures.
6. The liquid crystal device of claim 5 , wherein the number of linear structures are asymmetric.
7. The liquid crystal device of claim 2 , wherein the number of angled features includes an array of conical-shaped structures.
8. A liquid crystal device, comprising:
a semiconductor substrate having a first surface;
a number of regularly patterned island features formed within a recessed portion in the first surface; and
a liquid crystal media located within the recessed portion, and in contact with the regularly patterned features.
9. The liquid crystal device of claim 8 , wherein the number of regularly patterned island features includes an array of pyramid shaped features.
10. The liquid crystal device of claim 8 , wherein the number of regularly patterned island features includes an array of conical-shaped structures.
11. The liquid crystal device of claim 8 , wherein the semiconductor substrate includes a silicon substrate.