Field effect transistor and manufacturing method thereof
A field effect transistor (FET) and a manufacturing method thereof are provided. The FET includes a substrate, a fin bump, an insulating layer, a charge trapping structure and a gate structure. The fin bump is disposed on the substrate. The insulating layer is disposed on the substrate and located at two sides of the fin bump. The charge trapping structure is disposed on the insulating layer and located at least one side of the fin bump. A cross-section of the charge trapping structure is L-shaped. The gate structure covers the fin bump and the charge trapping structure.
1. A manufacturing method of a field effect transistor, comprising:
providing a substrate;
forming a fin bump on the substrate;
forming an insulating layer on the substrate, the insulating layer being located at two sides of the fin bump;
disposing a charge trapping material on the fin bump and the substrate;
etching part of the charge trapping material covering the fin bump to expose part of the fin bump;
forming a gate structure covering the fin bump and the charge trapping material; and
etching the charge trapping material by using the gate structure as a mask to form a charge trapping structure, wherein the charge trapping structure is disposed on the insulating layer and located at least one side of the fin bump, a cross-section of the charge trapping structure is L-shaped, the charge trapping structure covers part of the lateral wall of the fin bump, a top of the charge trapping structure is lower than a top of the fin bump and higher than a bottom of the fin bump, and none of the charge trapping structure is on the top of the fin bump.
2. The manufacturing method of the field effect transistor according to claim 1 , wherein after the part of the fin bump is exposed, the manufacturing method further comprising:
forming a high K dielectric material covering the fin bump and the charge trapping material.
3. The manufacturing method of the field effect transistor according to claim 2 , wherein in the step of forming the high K dielectric material, the high K dielectric material further covers an external lateral wall of the gate structure.
4. The manufacturing method of the field effect transistor according to claim 1 , wherein after the charge trapping structure is formed, the charge trapping structure is located at two sides of the fin bump.
5. The manufacturing method of the field effect transistor according to claim 1 , wherein after the charge trapping structure is formed, the gate structure and the insulating layer are separated by the charge trapping structure.
6. The manufacturing method of the field effect transistor according to claim 1 , wherein after the charge trapping structure is formed, the thickness of the charge trapping structure is substantially uniform.
7. The manufacturing method of the field effect transistor according to claim 1 , wherein the step of disposing the charge trapping material on the fin bump and the substrate includes:
disposed a first oxide material on the fin bump and the substrate;
disposing a nitride material on the first oxide material; and
disposing a second oxide material on the nitride material.
8. The manufacturing method of the field effect transistor according to claim 1 , wherein after the charge trapping structure is formed, the charge trapping structure exposes a top of the fin bump.
9. The manufacturing method of the field effect transistor according to claim 1 , wherein after the charge trapping structure is formed, a height of the fin bump is larger than a height of the charge trapping structure.
10. The manufacturing method of the field effect transistor according to claim 1 , wherein after the charge trapping structure is formed, the charge trapping structure exposes a part of the insulating layer.