Method for fabricating connection regions of an integrated circuit, and integrated circuit having connection regions

1. A method comprising

providing an integrated circuit having a connection region,

applying a dielectric to the integrated circuit,

applying a metallization layer to the dielectric, the metallization layer being corrodible,

applying a conductive protection device that is wetable by the liquid solder to the metallization layer,

patterning the conductive protection device such that the protection device is removed an area around the connection region; and

oxidizing the metallization layer in the areas around the connection region thereby forming a solder stop device that is not wetable by the liquid solder.

2. The method of claim 1 , further comprising

applying a connection device to the connection region.

3. The method of claim 2 , wherein applying the connection device includes applying a solder ball.

4. The method of claim 1 , further comprising

applying a carrier layer to the dielectric.

5. The method of claim 4 , further comprising selecting

a sputtering process for applying the carrier layer.

6. The method of claim 1 , further comprising

applying an interconnect layer, and applying a barrier device to the dielectric.

7. The method of claim 6 , wherein

applying the interconnect layer comprises electrochemically depositing the interconnect layer.

8. The method of claim 1 , further comprising

patterning the metallization layer before applying the protection device.

9. The method of claim 1 , further comprising

electrochemically depositing the protection device.

10. The method of claim 1 , further comprising

providing a patterned photomask, and

etching the protection device in a region exposed by the photomask.