Polymer transistor arrangement, integrated circuit arrangement and method for producing a polymer transistor arrangement
View Patent ↗The invention relates to a polymer transistor arrangement, an integrated circuit arrangement and a method for producing a polymer transistor arrangement. The polymer transistor arrangement contains a polymer transistor formed in and/or on a substrate. The polymer transistor contains a first source/drain region, a second source/drain region, a channel region between the first and second source/drain regions, a gate region and a gate-insulating layer between channel region and gate region. A drive circuit of the polymer transistor arrangement is set up in such a way that it provides the source/drain regions and the gate region with electrical potentials such that the junction between at least one of the source/drain regions and the channel region can be operated as a diode.
1. An electrical component, comprising:
a polymer transistor formed in and/or on a substrate including:
a first source/drain region;
a second source/drain region;
a channel region between the first and second source/drain regions;
a gate region; and
a gate-insulating layer between the channel region and a gate region; and
a drive circuit set up to provide the first source/drain region with a voltage of sufficiently large magnitude and the gate region with a drain voltage of a sufficiently small magnitude, such that the polymer transistor has properties similar or identical to those of a Schottky diode.
2. The electrical component as claimed in claim 1 , wherein the drive circuit provides the source/drain regions and the gate region with electrical potentials such that the junction between one of the two source/drain regions and the channel region is connected as a reverse-biased diode.
3. The electrical component as claimed in claim 1 , wherein the channel region and the source/drain regions are produced from a material such that the junction between one of the source/drain regions and the channel region is one of a Schottky junction, an in junction, an ip junction, and a pn junction.
4. The electrical component as claimed in claim 1 , wherein the drive circuit provides electrical potentials such that a magnitude of the gate voltage is greater than a magnitude of the voltage between the source/drain regions.
5. The electrical component as claimed in claim 1 , wherein the junctions between respective ones of the source/drain regions and the channel region are formed geometrically asymmetrically with respect to one another.
6. The electrical component as claimed claim 1 , wherein one of the source/drain regions is formed at least partially on the channel region and the other source/drain region is formed at least partially below the channel region.
7. An integrated circuit arrangement having the electrical component as claimed in claim 1 .
8. The integrated circuit arrangement as claimed in claim 7 , wherein the integrated circuit arrangement is a reference voltage circuit.
9. The integrated circuit arrangement as claimed in claim 7 , wherein the integrated circuit arrangement is a temperature-compensated reference voltage circuit.
10. The integrated circuit arrangement as claimed in claim 7 , wherein the integrated circuit arrangement is a current source.
11. The integrated circuit arrangement as claimed in claim 7 , wherein the integrated circuit arrangement is a voltage control circuit.
12. A method for producing an electrical component, comprising the steps of:
forming a polymer transistor in and/or on a substrate by:
forming a first source/drain region;
forming a second source/drain region;
forming a channel region between the first and second source/drain regions;
forming a gate region; and
forming a gate-insulating layer between the channel region and the gate region; and
setting up a drive circuit to provide the first source/drain region with a voltage of sufficiently large magnitude and the gate region with a drain voltage of a sufficiently small magnitude, such that the polymer transistor has properties similar or identical to those of a Schottky diode.