IP Library Granted Patent US 7,514,798
Granted Patent B2
US 7,514,798 · App. 10/732,979 · Granted Apr 7, 2009

Arrangement for the protection of three-dimensional structures on wafers

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Quick Facts
Patent No.
US 7,514,798
App. No.
10/732,979
Granted
Apr 7, 2009
Kind
B2
Abstract

An electronic component includes a wafer and a number of bond pads disposed on the wafer. A number of functional 3-D structures are disposed on the wafer. Each functional 3-D structure includes a compliant base element. A number of reroute traces are electrically connected to one of the bond pads and extend onto a surface of one of the functional 3-D structures. A number of selected 3-D structures is disposed on the wafer to provide a mechanical reinforcement. At least some of the selected 3-D structures have a greater mechanical load-bearing capacity than some the functional 3-D structures.

Claims (26)

1. An electronic component comprising:

a wafer;

a plurality of bond pads disposed on a surface of the wafer;

a plurality of functional 3-D structures disposed on the surface of the wafer, such that each bond pad is laterally spaced from the plurality of bond pads so that each bond pad is associated with a laterally-spaced one of the 3-D structures, each functional 3-D structure including a non-conductive compliant base element and having an upper surface spaced from the surface of the wafer;

a plurality of reroute traces, each reroute trace extending over the surface of the wafer between a bond pad and its associated 3-D structure such that each reroute trace is electrically connected to one of the bond pads and extends onto the upper surface of the associated laterally-spaced one of the functional 3-D structures so that the reroute trace provides an electrical connection between the bond pad and the upper surface of the associated functional 3-D structure; and

a plurality of selected 3-D structures disposed on the surface of the wafer to provide a mechanical reinforcement, wherein at least some of the selected 3-D structures have a greater mechanical load-bearing capacity than some of the functional 3-D structures.

2. The component of claim 1 wherein each reroute trace comprises a copper/nickel layer that is covered by a gold layer.

3. The component of claim 1 wherein the selected 3-D structures have a lower degree of compressibility than the functional 3-D structures.

4. The component of claim 1 wherein the selected 3-D structures have a greater height than the functional 3-D structures.

5. The component of claim 1 wherein each of the selected 3-D structures includes a compliant base element that has a greater volume than the compliant base element of the functional 3-D structures.

6. The component of claim 1 wherein the selected 3-D structures are arranged in a regularly distributed manner in an edge region of the wafer.

7. The component of claim 1 wherein the selected 3-D structures are arranged in a regularly distributed manner over the wafer.

8. The component of claim 1 wherein the selected 3-D structures are able to be electrically bonded.

9. The electronic component of claim 1 , wherein the compliant base element is formed from silicone.

10. The component of claim 1 wherein each of the selected 3-D structures is protected by a metal cap.

11. The component of claim 1 wherein each of the selected 3-D structures is surrounded by a metallic supporting ring.

12. The component of claim 1 wherein each of the other 3-D structures have a support structure formed upon a surface of the 3 -D structure.

13. The component of claim 12 wherein the support structure comprises a metal cap disposed over an entire upper surface of the other 3-D structures.

14. The component of claim 12 wherein the support structure comprises a metal ring formed along side surfaces of the other 3-D structures.

15. The component of claim 14 wherein the metal ring is not disposed on any portion of an upper surface of the other 3-D structures.

16. The component of claim 12 wherein the support structure is formed from the same material as the reroute traces.

17. The component of claim 12 wherein each reroute trace comprises a copper/nickel layer that is covered by a gold layer.

18. The component of claim 12 wherein the other 3-D structures have a lower degree of compressibility than the functional 3-D structures.

19. The component of claim 12 wherein the other 3-D structures have a greater height than the functional 3-D structures.

20. The component of claim 12 wherein each of the other 3-D structures includes a compliant base element that has a greater volume than the compliant base element of the functional 3-D structures.

21. The component of claim 12 wherein the other 3-D structures are arranged in a regularly distributed manner in an edge region of the wafer.

Assignments (5)
CORRECTIVE ASSIGNMENT TO CORRECT THE PATENT 7105729 PREVIOUSLY RECORDED AT REEL: 036827 FRAME: 0885. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Jul 26, 2017
From: INFINEON TECHNOLOGIES AG
To: POLARIS INNOVATIONS LIMITED
Reel/Frame 043336/0694 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 9, 2015
From: INFINEON TECHNOLOGIES AG
To: POLARIS INNOVATIONS LIMITED
Reel/Frame 036827/0885 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 8, 2015
From: QIMONDA AG
To: INFINEON TECHNOLOGIES AG
Reel/Frame 035623/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 15, 2010
From: INFINEON TECHNOLOGIES AG
To: QIMONDA AG
Reel/Frame 023796/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 24, 2004
From: BRINTZINGER, AXEL
To: INFINEON TECHNOLOGIES AG
Reel/Frame 014458/0620 →