IP Library Granted Patent US 7,405,991
Granted Patent B2
US 7,405,991 · App. 10/812,395 · Granted Jul 29, 2008

Semiconductor device voltage supply for a system with at least two, especially stacked, semiconductor devices

Assignee: Infineon Technologies AG
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Quick Facts
Patent No.
US 7,405,991
App. No.
10/812,395
Granted
Jul 29, 2008
Kind
B2
Abstract

The invention is directed to a system and method comprising a first semiconductor device and a second semiconductor device, wherein the first semiconductor device comprises a voltage supply means, characterized in that the voltage supply means of the first semiconductor device is connected to the second semiconductor device, so that the voltage supply means of the first semiconductor device can provide a supply voltage for the second semiconductor device.

Claims (34)

1. A system comprising:

a first semiconductor device, and

a second semiconductor device,

wherein the first semiconductor device and the second semiconductor device each comprise a voltage supply device,

wherein said voltage supply device of said first semiconductor device is connected to said second semiconductor device, so that said voltage supply device of said first semiconductor device can provide a supply voltage for operation of said second semiconductor device, and

wherein the system is adapted such that, in an external access operating mode of the second semiconductor device, the voltage supply device of said second semiconductor device provides the supply voltage for operation of the second semiconductor device, and, in a standby or refresh operating mode of the second semiconductor device, the voltage supply device of said first semiconductor device provides the supply voltage for operation of the second semiconductor device.

2. The system according to claim 1 , wherein said first semiconductor device and said second semiconductor device are arranged in a same housing.

3. The system according to claim 2 , wherein said first and second semiconductor devices are arranged in said housing in a stacked manner.

4. The system according to claim 2 , wherein said housing is a plug mountable semiconductor device housing.

5. The system according to claim 4 , wherein said plug mountable semiconductor device housing is a Dual-In-Line (DIL) housing.

6. The system according to claim 4 , wherein said plug mountable semiconductor device housing is a Pin-Grid-Array (PGA) housing.

7. The system according to claim 2 , wherein said housing is a surface mountable semiconductor device housing.

8. The system according to claim 1 , said system comprising one or several further semiconductor devices.

9. The system according to claim 8 , wherein said one or said several further semiconductor device(s) is/are arranged in a same semiconductor device housing as said first and said second semiconductor devices.

10. The system according to claim 8 , wherein said voltage supply device of said first semiconductor device is also connected to said one or to said several further semiconductor device(s), so that said voltage supply device of said first semiconductor device can additionally provide a supply voltage for said one or said several further semiconductor device(s).

11. The system according to claim 8 , wherein said first semiconductor device comprises a further voltage supply device that is connected to said one or said several further semiconductor device(s), so that said further voltage supply device of said first semiconductor device can provide a supply voltage for said one or said several further semiconductor device(s).

12. The system according to claim 1 , wherein said first and/or said second semiconductor devices, and/or said one and/or said several further semiconductor devices are memory devices.

13. The system according to claim 12 , wherein said memory device is a table memory device or said memory devices are table memory devices, respectively.

14. The system according to claim 13 , wherein said table memory device or said table memory devices are RAM table memory devices, respectively.

15. The system according to claim 14 , wherein said RAM table memory device is a DRAM table memory device or said RAM table memory devices are DRAM table memory devices, respectively.

16. The system according to claim 13 , wherein said table memory device is a ROM table memory device or said table memory devices are ROM table memory devices, respectively.

17. The system according to claim 12 , wherein said memory device is or said memory devices are programmable logic devices (PLDs) and/or programmable logic arrays (PLAs).

18. The system according to claim 1 , wherein said voltage supply device and/or said further voltage supply device provide a voltage supply for said first semiconductor device.

19. The system according to claim 1 , wherein said voltage supply means and/or said further voltage supply means generate(s) the respective supply voltage from an external voltage.

20. The system according to claim 1 , wherein said voltage supply device and/or said further voltage supply device are or comprise a voltage regulating device.

21. The system according to claim 1 , wherein said voltage supply device and/or said further voltage supply device are or comprise a charge pump.

22. The system according to claim 1 , wherein said voltage supply device of said second semiconductor device is activated in the first operating mode, and wherein said supply voltage device of said second semiconductor device is deactivated in the second operating mode.

23. The system according to claim 1 , wherein an appropriate fuse is provided on said first and/or second semiconductor device(s), by means of which it is determined whether the corresponding semiconductor device is to assume the function of said first semiconductor device or the function of said second semiconductor device.

24. The system according to claim 1 , wherein said voltage supply device of said first semiconductor device is connected to a corresponding pad of said first semiconductor device.

25. The system according to claim 24 , wherein said pad of said first semiconductor device is connected to a pad which said voltage supply device of said second semiconductor device can be connected to.

26. The system according to claim 25 , wherein said pad of said first semiconductor device is connected directly to the corresponding pad of said second semiconductor device by means of an appropriate bonding wire.

27. The system according to claim 25 , wherein said pad of said first semiconductor device is connected indirectly to the corresponding pad of said second semiconductor device via an interposer.

28. The system according to claim 12 , wherein said memory devices are functional memory devices.

29. The system according to claim 12 , wherein said memory devices are fundamental memory devices.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 15, 2015
From: INFINEON TECHNOLOGIES AG
To: POLARIS INNOVATIONS LIMITED
Reel/Frame 036873/0758 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 8, 2015
From: QIMONDA AG
To: INFINEON TECHNOLOGIES AG
Reel/Frame 035623/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 15, 2010
From: INFINEON TECHNOLOGIES AG
To: QIMONDA AG
Reel/Frame 023821/0535 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 9, 2004
From: EGERER, JENS
To: INFINEON TECHNOLOGIES AG
Reel/Frame 015671/0912 →
Priority Claims (1)
DE 103 15 303 · Apr 2, 2003 · national
Continuity (1)
Related Publication 20050017341A1 · Jan 27, 2005