Semiconductor device and method for fabricating the semiconductor device

1. A semiconductor device, comprising:

a first semiconductor substrate having a first surface and a second surface being opposite said first surface, said first semiconductor substrate having a tapering, continuous opening formed therein extending from said first surface to said second surface, said opening defining sidewalls;

at least first and second rewiring devices disposed on said first surface of said first semiconductor substrate for providing an electrical contact-connection of said first semiconductor substrate;

at least third and fourth rewiring devices disposed on said second surface of said first semiconductor substrate;

a first patterned metallization disposed on said sidewalls of said opening for providing separate contact-connection of said first and second rewiring devices; and

a passivation disposed between said first patterned metallization with said third and fourth rewiring devices and said semiconductor substrate in said opening.

2. The semiconductor device according to claim 1 , wherein said first patterned metallization with said third and fourth rewiring devices define patterned interconnects.

3. A semiconductor device, comprising:

a first semiconductor substrate having a first surface and a second surface being opposite said first surface, said first semiconductor substrate having a tapering, continuous opening formed therein extending from said first surface to said second surface, said opening defining sidewalls;

at least first and second rewiring devices disposed on said first surface of said first semiconductor substrate for providing an electrical contact-connection of said first semiconductor substrate;

at least third and fourth rewiring devices disposed on said second surface of said first semiconductor substrate;

a first patterned metallization disposed on said sidewalls of said opening for providing separate contact-connection of said first and second rewiring devices;

at least a second patterned metallization disposed above said first patterned metallization in said opening for a separate contact-connection of said third and fourth rewiring devices; and

an insulator disposed between said first patterned metallization and said second patterned metallization.

4. A semiconductor device, comprising:

a first semiconductor substrate having a first surface and a second surface being opposite said first surface, said first semiconductor substrate having a tapering, continuous opening formed therein extending from said first surface to said second surface, said opening defining sidewalls;

at least first and second rewiring devices disposed on said first surface of said first semiconductor substrate for providing an electrical contact-connection of said first semiconductor substrate;

at least third and fourth rewiring devices disposed on said second surface of said first semiconductor substrate;

a first patterned metallization disposed on said sidewalls of said opening for providing separate contact-connection of said first and second rewiring devices;

a second semiconductor substrate coupled to said first semiconductor substrate;

at least one further rewiring device disposed on said second semiconductor substrate, said first patterned metallization connecting said further rewiring device to said third and fourth rewiring devices on said second surface of said first semiconductor substrate; and

a mechanical connecting device connecting said first semiconductor substrate to said second semiconductor substrate.

5. The semiconductor device according to claim 4 , wherein said second semiconductor device has a further continuous tapering, opening formed therein and defining further side walls on which said first patterned metallization is disposed.

6. The semiconductor device according to claim 5 , wherein said further opening is one of v-shaped and conical shaped.