Method for manufacturing a semiconductor device that includes plasma treating an insulating film with a mixture of helium and argon gases
View Patent ↗In a method for manufacturing a semiconductor device having a multi-layer insulating film, a first insulating film is formed as one layer of the multi-layer insulating film, and a plasma treatment is performed on the surface of the first insulating film in an ambient of helium and argon, containing 5 to 31% Ar. After the plasma treatment, a second insulating film, different from the first insulating film, is formed on the first insulating film as another layer of the multi-layer insulating film.
1. A method for manufacturing a semiconductor device that has a multi-layer interlayer insulating film, comprising:
forming a first insulating film as one layer of the multi-layer insulating film,
plasma treating the first insulating film in an ambient of a gas mixture of He and Ar containing 5 to 31% Ar, and
after the plasma treatment, forming a second insulating film, different from the first insulating film, as another layer of the multi-layer film, on the first insulating film.
2. The method for manufacturing a semiconductor device according to claim 1 , including forming a low-dielectric-constant film as the first insulating film.
3. The method for manufacturing a semiconductor device according to claim 1 , including depositing as the first insulating film, a film selected from the group consisting of MSQ (alkyl silsesquioxane), fluorinated allylene, SiOC, an organic polymer, a material containing S 1 and CH 3 groups, a material containing Si—H groups, and a porous film formed by dispersing pores in a low-dielectric-constant film, by one of spin coating and CVD (chemical vapor deposition).
4. The method for manufacturing a semiconductor device according to claim 1 , including forming as the second insulating film, a film of SiO 2 , SiN, SiC, SiCN, SiOC, and SiON by one of spin coating and CVD (chemical vapor deposition).
5. The method for manufacturing a semiconductor device according to claim 1 , including plasma treating the first insulating film for 10 to 60 seconds.
6. A method for manufacturing a semiconductor device that has a multi-layer interlayer insulating film, comprising:
forming a first insulating film as one layer of the multi-layer insulating film,
a plasma treating the first insulating film in an ambient of a gas mixture of He and Ar containing 5 to 31% Ar,
after the plasma treating, applying an adhesion promoter to the first insulating film, and
forming a second insulating film, different from the first insulating film, as another layer of the multi-layer insulating films, on the adhesion promoter.
7. The method for manufacturing a semiconductor device according to claim 6 , including forming a low-dielectric-constant film as the first insulating film.
8. The method for manufacturing a semiconductor device according to claim 6 , including depositing, as the first insulating film, a film selected from the group consisting of MSQ (alkyl silsesquioxane), fluorinated allylene, SiOC, an organic polymer, a material containing S 1 and CH 3 groups, a material containing Si—H groups, and a porous film formed by dispersing pores in a low-dielectric-constant film, by one of spin coating and CVD (chemical vapor deposition).
9. The method for manufacturing a semiconductor device according to claim 6 , including forming as the second insulating film, a film of SiO 2 , SiN, SiC, SiCN, SiOC, and SiON by one of spin coating and CVD (chemical vapor deposition).
10. The method for manufacturing a semiconductor device according to claim 6 , including applying, as the adhesion promoter, an adhesion promoter containing a silane coupling agent to the first insulating film by spin coating.
11. The method for manufacturing a semiconductor device according to claim 6 , wherein the adhesion promoter has a thickness of 5 to 20 nm.
12. The method for manufacturing a semiconductor device according to claim 6 , including plasma treating the first insulating film for 10 to 60 seconds.
13. A method for manufacturing a semiconductor device that has a multi-layer interlayer insulating film, comprising:
forming a first insulating film as one layer of the multi-layer insulating film,
applying an adhesion promoter to the first insulating film,
plasma treating the adhesion promoter in an ambient of a gas mixture of He and Ar containing 5 to 31% Ar, and
after the plasma treatment, forming a second insulating film, different from the first insulating film, as another layer of the multi-layer insulating film, on the adhesion promoter.
14. The method for manufacturing a semiconductor device according to claim 13 , including forming a low-dielectric-constant film as the first insulating film.
15. The method for manufacturing a semiconductor device according to claim 13 , including depositing, as the first insulating film, a film selected from the grout consisting of MSQ (alkyl silsesquioxane), fluorinated allylene, SiOC, an organic polymer, a material containing S 1 and CH 3 groups, a material containing Si—H groups, and a porous film formed by dispersing pores in a low-dielectric-constant film, by one of spin coating and CVD (chemical vapor deposition).
16. The method for manufacturing a semiconductor device according to claim 13 , including forming as the second insulating film, a film of SiO 2 , SiN, SiC, SiCN, SiOC, and SiON by one of spin coating and CVD (chemical vapor deposition).
17. The method for manufacturing a semiconductor device according to claim 13 , including applying, as the adhesion promoter, an adhesion promoter containing a silane coupling agent to the first insulating film by spin coating.
18. The method for manufacturing a semiconductor device according to claim 13 , wherein the adhesion promoter has a thickness of 5 to 20 nm.
19. The method for manufacturing a semiconductor device according to claim 13 , including plasma treating the first insulating film for 10 to 60 seconds.