Reduction of the contact resistance in organic field-effect transistors with palladium contacts by using phosphines and metal-containing phosphines
View Patent ↗A semiconductor device includes a semiconductor path, the semiconductor path including an organic semiconductor material, a first contact to inject charge carriers into the semiconductor path, a second contact to extract charge carriers from the semiconductor path, and a layer including phosphine arranged between the first contact and the semiconductor path and/or between the second contact and the semiconductor path. The phosphine in the layer acts as a charge transfer molecule which makes it easier to transfer charge carriers between contact and organic semiconductor material. As a result, the contact resistance between contact and organic semiconductor material can be reduced considerably.
1. A semiconductor device comprising:
a semiconductor path, the semiconductor path comprising an organic semiconductor material;
a first contact to inject charge carriers into the semiconductor path;
a second contact to extract charge carriers from the semiconductor path; and
a self-organizing monomolecular layer including phosphine, wherein the layer is arranged between the first contact and the semiconductor path and/or between the second contact and the semiconductor path.
2. The semiconductor device of claim 1 , wherein the self-organizing monomolecular layer includes a phosphine metal complex.
3. The semiconductor device of claim 2 , wherein the phosphine metal complex includes palladium or platinum.
4. The semiconductor device of claim 1 , wherein the first and/or second contact comprises palladium.
5. The semiconductor device of claim 1 , further comprising a gate electrode and a gate dielectric that form a field-effect transistor.