A method of fabricating a CoSb 3 -based thermoelectric device is disclosed. The method includes providing a high-temperature electrode, providing a buffer layer on the high-temperature electrode, forming composite n-type and p-type layers, attaching the buffer layer to the composite n-type and p-type layers, providing a low-temperature electrode on the composite n-type and p-type layers and separating the composite n-type and p-type layers from each other to define n-type and p-type legs between the high-temperature electrode and the low-temperature electrode.
1. A product comprising:
a thermoelectric device comprising:
a high-temperature electrode;
a buffer layer attached directly to said high-temperature electrode the buffer layer having a roughened surface, wherein the buffer layer comprises sintered powder or foil;
n-type and p-type legs provided in electrical contact with said buffer layer; wherein each of the n-type and p-type legs are directly attached to the roughened surface of the buffer layer and
a low-temperature electrode provided in electrical contact with said n-type and p-type legs.
2. The product of claim 1 wherein said composite n-type and p-type layers comprises CoSb 3 .
3. The product of claim 2 wherein said buffer layer comprises titanium.
4. The product of claim 3 wherein said high-temperature electrode comprises molybdenum.
5. A product as set forth in claim 1 wherein the high-temperature electrode includes a roughened surface and wherein the buffer layer is attached directly to the high-temperature electrode at the roughened surface.
6. A product as set forth in claim 1 wherein the high-temperature electrode includes a roughened surface and wherein the buffer layer is attached to the roughened surface of the high-temperature electrode.
7. A product comprising a thermoelectric device, comprising:
a high-temperature electrode having a first roughened surface;
providing a buffer layer attached directly to said high-temperature electrode wherein the buffer layer comprises sintered powder or a foil;
the buffer layer having a second roughened surfaces n-type and p-type layers and wherein at least one of the n-type or p-type layers is directly attached to said buffer layer wherein at least one of the n-type or p-type layers comprises CoSb 3 ;
a low-temperature electrode on at least one of the n-type or p-type layers.
8. The product of claim 7 wherein said buffer layer comprises titanium.
9. The product of claim 7 wherein said high-temperature electrode comprises molybdenum.
10. The product of claim 7 wherein each of the n-type and p-type layers comprises sintered material sintered by spark plasma sintering.
11. The product of claim 7 wherein said buffer layer comprises titanium.
12. The product of claim 11 wherein said high-temperature electrode comprises molybdenum.
13. A product comprising:
a thermoelectric device comprising:
a high-temperature electrode;
a buffer layer attached directly to said high-temperature electrode;
n-type and p-type legs provided in electrical contact with said buffer layer;
a low-temperature electrode provided in electrical contact with said n-type and p-type legs; and
a DC pulse generator electrically connected to the high-temperature electrode and low-temperature electrode.
14. A product as set forth in claim 1 wherein the buffer layer comprises sintered powder.
15. A product as set forth in claim 2 wherein the buffer layer comprises a foil.
16. A product as set forth in claim 2 wherein the buffer layer is substantially planar.
17. A product as set forth in claim 7 wherein the buffer layer comprises sintered powder.
18. A product a set forth in claim 7 wherein the buffer layer comprises a foil.
19. A product as set forth in claim 7 wherein the buffer layer is substantially planar.
20. A product comprising:
a thermoelectric device comprising:
a high-temperature electrode;
a buffer layer attached directly to said high-temperature electrode, and wherein the buffer layer includes a roughened surface;
n-type and p-type legs provided in electrical contact with said buffer layer; wherein each of the n-type and p-type legs are directly attached to the roughened surface of the buffer layer;
a low-temperature electrode provided in electrical contact with said n-type and p-type legs; and
a DC pulse generator electrically connected to the high-temperature electrode and low-temperature electrode.