IP Library Granted Patent US 7,268,430
Granted Patent B2
US 7,268,430 · App. 11/213,882 · Granted Sep 11, 2007

Semiconductor device and process for manufacturing the same

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Quick Facts
Patent No.
US 7,268,430
App. No.
11/213,882
Granted
Sep 11, 2007
Kind
B2
Abstract

The present invention relates to a semiconductor device in which electrodes formed on a semiconductor chip and electrodes formed on a wiring board are electrically connected via projecting elastic electrodes, and further relates to a mounting method of reducing a pressure applied to electrodes formed on a substrate or underlying wirings when a semiconductor chip and a wiring board are bonded.

Claims (7)

1. A semiconductor device comprising a first substrate on which one or more electrodes are formed, a second substrate on which one or more electrodes are formed, elastic bumps formed on the one or more electrodes on the second substrate, a spring constant of the elastic bump being 1000 N/m or lower,

wherein surfaces of the one or more electrodes on the first substrate and surfaces of the elastic bumps formed on the one or more electrodes on the second substrate are electrically connected by bonding.

2. The semiconductor device according to claim 1 , wherein the elastic bump is a spring bump.

3. The semiconductor device according to claim 1 , wherein the elastic bump is a resin core-type bump.

4. The semiconductor device according to claim 1 , wherein the elastic bump is a hollow bump.

5. A kit for manufacturing a semiconductor device in which a first substrate on which one or more electrodes are formed and a second substrate on which one or more electrodes are formed are electrically connected via elastic bumps, which comprises a first substrate on which one or more electrodes are formed, a second substrate on which one or more electrodes are formed, and elastic bumps formed on the one or more electrodes on the second substrate,

wherein surfaces of the one or more electrodes on the first substrate have a root mean square roughness of 10 nm or lower, and surfaces of the elastic bumps formed on the one or more electrodes on the second substrate have a root mean square roughness of 10 nm or lower.

Assignments (9)
CHANGE OF ADDRESS Recorded Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →
CHANGE OF NAME Recorded Mar 21, 2014
From: OKI SEMICONDUCTOR CO., LTD
To: LAPIS SEMICONDUCTOR CO., LTD.
Reel/Frame 032495/0483 →
CHANGE OF NAME Recorded Dec 5, 2011
From: FUJITSU MICROELECTRONICS LIMITED
To: FUJITSU SEMICONDUCTOR LIMITED
Reel/Frame 027327/0143 →
CHANGE OF NAME Recorded Sep 14, 2010
From: RENESAS TECHNOLOGY CORP.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 024982/0558 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 13, 2009
From: FUJITSU LIMITED
To: FUJITSU MICROELECTRONICS LIMITED
Reel/Frame 022248/0521 →
CHANGE OF NAME Recorded Jan 8, 2009
From: OKI ELECTRIC INDUSTRY CO., LTD.
To: OKI SEMICONDUCTOR CO., LTD.
Reel/Frame 022092/0903 →
CHANGE OF NAME Recorded Nov 20, 2008
From: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
To: PANASONIC CORPORATION
Reel/Frame 021894/0631 →
RECORD TO CORRECT THE RECEIVIG PARTY (11) PREVIOUSLY RECORDE AT REEL 016942 FRAME 0915 Recorded Jan 29, 2007
From: SUGA, TADATOMO; ITOH, TOSHIHIRO
To: NEC CORPORATION; RENESAS TECHNOLOGY CORP.; SUGA, TADATOMO; OKI ELECTRIC INDUSTRY CO., LTD.; SANYO ELECTRIC CO., LTD.; SHARP KABUSHIKI KAISHA; SONY CORPORATION; KABUSHIKI KAISHA TOSHIBA; FUJITSU LIMITED; MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.; ROHM CO., LTD.
Reel/Frame 018853/0460 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 30, 2005
From: SUGA, TADATOMO; ITOH, TOSHIHIRO
To: RENESAS TECHNOLOGY CORP.; SUGA, TADATOMO; OKI ELECTRIC INDUSTRY CO., LTD.; SANYO ELECTRIC CO., LTD.; SHARP KABUSHIKI KAISHA; SONY CORPORATION; KABUSHIKI KAISHA TOSHIBA; NEC CORPORATION; FUJITSU LIMITED; MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.; ROHM CO., LTD.
Reel/Frame 016942/0915 →