Wafer strength reinforcement system for ultra thin wafer thinning
View Patent ↗A wafer strength reinforcement system is provided including providing a wafer, providing a tape for supporting the wafer, and positioning a wafer edge support material for location between the tape and the wafer.
1. A method for fabricating a wafer strength reinforcement system comprising:
providing a wafer having a rounded edge;
providing a tape, having a planar surface extending beyond the rounded edge of the wafer, for supporting the wafer; and
positioning a wafer edge support material between the planar surface of the tape and the rounded edge of the wafer through capillary action for supporting the rounded edge of the wafer.
2. The method as claimed in claim 1 wherein positioning the wafer edge support material further comprises:
mounting the tape on an active surface of the wafer; and
inserting the wafer edge support material at least between an edge of the wafer and the tape.
3. The method as claimed in claim 1 wherein positioning the wafer edge support material includes conforming the wafer edge support material to a narrow region between the rounded edge of the wafer and the planar surface of the tape.
4. The method as claimed in claim 1 wherein positioning the wafer edge support material further comprises:
positioning the wafer edge support material on the tape; and
mounting the tape having the wafer edge support material on an active surface of the wafer with the wafer edge support material at least between the edge of the wafer and the tape.
5. The method as claimed in claim 1 wherein positioning the wafer edge support material further comprises hardening the wafer edge support material at least between the edge of the wafer and the tape.
6. The method as claimed in claim 1 wherein positioning the wafer edge support material includes positioning the wafer edge support material in a liquid state.
7. The method as claimed in claim 1 further comprising:
backgrinding the wafer with the wafer edge support material hardened at least between the edge of the wafer and the tape.
8. The method as claimed in claim 1 further comprising:
backgrinding the wafer and the wafer edge support material hardened at least between the edge of the wafer and the tape; and
mounting a dicing tape over the wafer, the wafer edge support material, and the tape.
9. The method as claimed in claim 1 further comprising:
backgrinding the wafer with the wafer edge support material hardened at least between the edge of the wafer and the tape;
mounting a dicing tape over the wafer, the wafer edge support material, and the tape; and
removing at least the tape from the wafer mounted on the dicing tape.
10. The method as claimed in claim 1 further comprising:
backgrinding the wafer with the wafer edge support material hardened at least between the edge of the wafer and the tape;
mounting a dicing tape over the wafer, the wafer edge support material, and the tape;
removing the tape from the wafer mounted on the dicing tape; and
dicing the wafer and the wafer edge support material.
11. A method for fabricating a wafer strength reinforcement system comprising:
providing a semiconductor wafer having a rounded edge;
providing a backgrinding tape, having a planar surface extending beyond the rounded edge of the wafer, for supporting the semiconductor wafer; and
applying a paste between the planar surface of the backgrinding tape and the rounded edge of the semiconductor wafer through capillary action for supporting the rounded edge of the wafer.
12. The method as claimed in claim 11 wherein applying the paste further comprises:
mounting the backgrinding tape on an active surface of the semiconductor wafer; and
dispensing the paste at least between an edge of the semiconductor wafer and the backgrinding tape.
13. The method as claimed in claim 11 wherein applying the paste includes conforming the paste to a narrow region between the rounded edge of the wafer and the planar surface of the backgrinding tape.
14. The method as claimed in claim 11 wherein applying the paste further comprises:
applying the paste on the backgrinding tape; and
mounting the backgrinding tape having the paste on an active surface of the semiconductor wafer with the paste at least between the edge of the semiconductor wafer and the backgrinding tape.
15. The method as claimed in claim 11 wherein applying the paste further comprises hardening the paste at least between the edge of the semiconductor wafer and the backgrinding tape.
16. The method as claimed in claim 11 wherein applying the paste includes applying the paste in a liquid state.
17. The method as claimed in claim 11 further comprising:
backgrinding the semiconductor wafer with the paste hardened at least between the edge of the semiconductor wafer and the backgrinding tape.
18. The method as claimed in claim 11 further comprising:
backgrinding the semiconductor wafer and the paste hardened at least between the edge of the semiconductor wafer and the backgrinding tape; and
mounting a dicing tape over the semiconductor wafer, the paste, and the backgrinding tape.
19. The method as claimed in claim 11 further comprising:
backgrinding the semiconductor wafer with the paste hardened at least between the edge of the semiconductor wafer and the backgrinding tape;
mounting a dicing tape over the semiconductor wafer, the paste, and the backgrinding tape; and
removing at least the backgrinding tape from the semiconductor wafer mounted on the dicing tape.
20. The method as claimed in claim 11 further comprising:
backgrinding the semiconductor wafer with the paste hardened at least between the edge of the semiconductor wafer and the backgrinding tape;
mounting a dicing tape over the semiconductor wafer, the paste, and the backgrinding tape;
removing the backgrinding tape from the semiconductor wafer mounted on the dicing tape; and
dicing the semiconductor wafer and the paste.