Thermally enhanced power semiconductor package system

1. A thermally enhanced power semiconductor package system comprising:

providing a power semiconductor die;

forming an upper lead frame, on the power semiconductor die, having coplanar connection points adjacent to each of the corners of the power semiconductor die;

forming a lower lead frame below the power semiconductor die, wherein the upper lead frame and the lower lead frame are provided in an offset configuration relative to each other at two sides of the power semiconductor die to provide two heat dissipation paths and wherein the lower lead frame below the power semiconductor die having a bottom being coplanar with the connection points.

2. The system as claimed in claim 1 further comprising encapsulating a molding compound around the power semiconductor die, the upper lead frame and the lower lead frame.

3. The system as claimed in claim 1 further comprising providing electrical and thermal contacts on the bottom and top of the thermally enhanced power semiconductor package system with the upper lead frame.

4. The system as claimed in claim 1 further comprises attaching interconnect structures between the lower lead frame and the power semiconductor die.

5. The system as claimed in claim 1 further comprising connecting a center heat sink to form a heat pipe.

6. A thermally enhanced power semiconductor package system comprising:

providing a power semiconductor die, having a backside metallization layer and a die topside metallization layer;

forming an upper lead frame, on the power semiconductor die, having coplanar connection points adjacent to each of the corners of the power semiconductor die;

attach the upper lead frame to the backside metallization layer;

forming a lower lead frame below the power semiconductor die, wherein the upper lead frame and the lower lead frame, in an offset configuration at two sides of the power semiconductor die, provide two heat dissipation paths and wherein the lower lead frame below the power semiconductor die having a bottom being coplanar with the connection points.

7. The system as claimed in claim 6 further comprising encapsulating a molding compound around the power semiconductor die, the upper lead frame and the lower lead frame and forming solder resist regions.

8. The system as claimed in claim 6 further comprising providing electrical and thermal contacts on the bottom and top of the thermally enhanced power semiconductor package system with the upper lead frame having exposed top surface area for convection heat dissipation and bottom leads for heat transfer.

9. The system as claimed in claim 6 further comprising attaching interconnect structures between a stress relief layer on the lower lead frame and the die topside metallization layer of the power semiconductor die.

10. The system as claimed in claim 6 further comprising connecting a center heat sink to form a heat pipe.

11. A thermally enhanced power semiconductor package system comprising:

a power semiconductor die;

an upper lead frame on the power semiconductor die, with coplanar connection points adjacent to each of the corners of the power semiconductor die;

a lower lead frame below the power semiconductor die, wherein the upper lead frame and the lower lead frame provided in an offset configuration at two sides of the power semiconductor die provide two heat dissipation paths and wherein the lower lead frame below the power semiconductor die having a bottom being coplanar with the connection points.

12. The system as claimed in claim 11 further comprising the power semiconductor die, the upper lead frame and the lower lead frame encapsulated with molding compound.

13. The system as claimed in claim 11 further comprising the upper lead frame with electrical contacts on the bottom and top of the thermally enhanced power semiconductor package system.

14. The system as claimed in claim 11 further comprises interconnect structures attached between the lower lead frame and the power semiconductor die.

15. The system as claimed in claim 11 further comprising a center heat sink connected to form a heat pipe.

16. The system as claimed in claim 11 further comprising:

the power semiconductor die having a backside metallization layer and a die topside metallization layer;

the upper lead frame attached to the backside metallization of the power semiconductor die with soft conductor; and

the lower lead frame, having a first source lead and a first gate lead, below the power semiconductor die, wherein the upper lead frame and the lower lead frame provide two heat dissipation paths.

17. The system as claimed in claim 16 further comprising the power semiconductor die, the upper lead frame and the lower lead frame encapsulated with molding compound, wherein the molding compound forms solder resist regions.

18. The system as claimed in claim 16 further comprising the upper lead frame with electrical contacts on the bottom and top of the thermally enhanced power semiconductor package system with the upper lead frame having exposed top surface area for convection heat dissipation and bottom leads connected for heat transfer.

19. The system as claimed in claim 16 further comprises interconnect structures attached between the stress relief layer on the lower lead frame and the die topside metallization layer of the power semiconductor die.

20. The system as claimed in claim 16 further comprising a center heat sink connected to form a heat pipe.