IP Library Granted Patent US 7,574,576
Granted Patent B2
US 7,574,576 · App. 11/644,161 · Granted Aug 11, 2009

Semiconductor device and method of controlling the same

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Quick Facts
Patent No.
US 7,574,576
App. No.
11/644,161
Granted
Aug 11, 2009
Kind
B2
Abstract

A semiconductor device includes: a memory cell array that includes non-volatile memory cells; a first memory region and a second memory region that are located in the memory cell array, the first memory region being protected during a protecting period, the second memory region being not protected; an address change circuit that changes an address in an address space of the first memory region and the second memory region in the memory cell array, to an address in an address space of the second memory region, during the protecting period; and a control circuit that prohibits access to the first memory region, and allows access to the second region, during the protecting period.

Claims (18)

1. A semiconductor device comprising:

a memory cell array that includes non-volatile memory cells;

a first memory region and a second memory region that are located in the memory cell array, the first memory region being protected during a protecting period, the second memory region being not protected;

an address change circuit that changes an address in an address space of the first memory region and the second memory region in the memory cell array, to an address in an address space of the second memory region, during the protecting period; and

a control circuit that prohibits access to the first memory region, and allows access to the second region, during the protecting period.

2. The semiconductor device as claimed in claim 1 , wherein the address change circuit changes an external address that indicates the first memory region and is input to the semiconductor device, to an internal address that indicates the second memory region in the memory cell array.

3. The semiconductor device as claimed in claim 1 , wherein the control circuit allows access to the first memory region, when authentication data that is read from an authentication data storage region for storing the authentication data matches external authentication data that is input from the outside.

4. The semiconductor device as claimed in claim 1 , wherein the address change circuit does not change the address, when authentication data that is read from an authentication data storage region for storing the authentication data matches external authentication data that is input from the outside.

5. The semiconductor device as claimed in claim 2 , wherein the address change circuit changes a section address indicating a memory region to an address indicating the second memory region, but does not change an address in the memory region, the section address being an address in the memory cell array.

6. The semiconductor device as claimed in claim 5 , wherein the address change circuit changes a section address indicating the first memory region to a section address indicating the second memory region.

7. The semiconductor device as claimed in claim 1 , wherein the second memory region is a boot data region in which a system code or program is stored.

8. A method of controlling a semiconductor device that has a memory cell array including non-volatile memory cells, a first memory region that is to be protected during a protecting period, and a second memory region that is not to be protected, the first memory region and the second memory region being located in the memory cell array,

the method comprising the steps of:

changing an address in an address space of the first memory region and the second memory region in the memory cell array, to an address in an address space of the second memory region, during the protecting period; and

prohibiting access to the first memory region, and allowing access to the second memory region, during the protecting period.

9. The method as claimed in claim 8 , further comprising the step of

allowing access to the first memory region, when authentication data that is read from an authentication data storage region for storing the authentication data matches external authentication data that is input from the outside.

10. The method as claimed in claim 9 , wherein the address is not changed, when authentication data that is read from an authentication data storage region for storing the authentication data matches external authentication data that is input from the outside.

Assignments (6)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 14, 2016
From: CYPRESS SEMICONDUCTOR CORPORATION
To: MONTEREY RESEARCH, LLC
Reel/Frame 040911/0238 →
PARTIAL RELEASE OF SECURITY INTEREST IN PATENTS Recorded Aug 11, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
Reel/Frame 039708/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 1, 2015
From: SPANSION, LLC
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 036044/0122 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT COLLATERAL Recorded Dec 30, 2014
From: BARCLAYS BANK PLC
To: SPANSION LLC; SPANSION INC.; SPANSION TECHNOLOGY INC.; SPANSION TECHNOLOGY LLC
Reel/Frame 034715/0305 →
SECURITY AGREEMENT Recorded Jun 4, 2010
From: SPANSION LLC; SPANSION INC.; SPANSION TECHNOLOGY INC.; SPANSION TECHNOLOGY LLC
To: BARCLAYS BANK PLC
Reel/Frame 024522/0338 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 16, 2007
From: KATO, KENTA; OKURA, MASAHIKO; SHIBATA, KENJI; NAGAO, MITSUHIRO; WANG, STEWART
To: SPANSION LLC
Reel/Frame 019054/0813 →