Extended redistribution layers bumped wafer

1. A method of manufacturing a semiconductor device, comprising:

providing a wafer, designated with a saw street guide, and having a bond pad formed on an active surface of the wafer;

taping the wafer with a dicing tape;

singulating the wafer along the saw street guide into a plurality of dies having a plurality of gaps between each of the plurality of dies;

stretching the dicing tape to expand the plurality of gaps to a predetermined distance;

depositing an organic material into each of the plurality of gaps, wherein a top surface of the organic material is substantially coplanar with a top surface of a first die of the plurality of dies;

patterning a redistribution layer over a portion of the organic material; and

depositing an under bump metallization (UBM) over the organic material in electrical communication, through the redistribution layer, with the bond pad.

2. The method of manufacture of claim 1 , further including forming a solder bump over the under bump metallization (UBM).

3. The method of manufacture of claim 2 , further including resingulating the wafer by cutting a portion of the organic material to render a plurality of extended dies.

4. The method of manufacture of claim 1 , wherein the organic material includes a benzocyclobutene (BCB), polyimide (PI), or acrylic resin material.

5. The method of manufacture of claim 1 , wherein the organic material is applied using a spin coating or needle dispensing process.

6. The method of manufacture of claim 1 , wherein stretching the dicing tape to expand the plurality of gaps to a predetermined distance is performed using an expansion table.

7. The method of manufacture of claim 3 , further including picking each of the plurality of extended dies from the dicing tape.

8. A method of manufacturing a semiconductor device, comprising:

providing a wafer, designated with a saw street guide, and having a bond pad formed over an active surface of the wafer;

taping the wafer with a first dicing tape;

singulating the wafer along the saw street guide into a plurality of dies having a plurality of first gaps between each of the plurality of dies;

picking the plurality of dies from the first dicing tape;

placing the plurality of dies onto a first wafer support system to obtain a plurality of second gaps of a predetermined width between each of the plurality of dies;

depositing an organic material into each of the plurality of gaps to render a recoated wafer, wherein a top surface of the organic material is substantially coplanar with a top surface of a first die of the plurality of dies;

transferring the recoated wafer onto a second wafer support system;

patterning a redistribution layer over a portion of the organic material; and

depositing an under bump metallization (UBM) over the organic material in electrical communication, through the redistribution layer, with the bond pad.

9. The method of manufacture of claim 8 , further including forming a solder bump over the under bump metallization (UBM).

10. The method of manufacture of claim 9 , further including resingulating the wafer by cutting a portion of the organic material to render a plurality of extended dies.

11. The method of manufacture of claim 10 , further including picking each of the plurality of extended dies from the second wafer support system.

12. The method of manufacture of claim 8 , wherein the first wafer support system comprises a third dicing tape.

13. The method of manufacture of claim 8 , wherein the first or second wafer support systems include a glass, silicon, or ceramic substrate.

14. The method of manufacture of claim 8 , wherein the organic material includes a benzocyclobutene (BCB), polyimide (PI), or acrylic resin material.

15. The method of manufacture of claim 8 , wherein the organic material is applied using a spin coating or needle dispensing process.