System and method for reducing process-induced charging
A semiconductor device includes a substrate, a memory cell formed on the substrate, and a contact to the substrate. The contact is formed in an area away from the memory cell and functions to raise the potential of the substrate.
1. A semiconductor device comprising:
a substrate;
a memory cell formed on the substrate; and
a contact to the substrate, where the substrate includes an area that includes a source region or a drain region, where the contact is located outside the area that includes the source region or the drain region, and where the contact is formed into the substrate at a depth ranging from about 50 Å to about 200 Å.
2. The semiconductor device of claim 1 , where the contact has a width ranging from about 250 Å to about 1000 Å.
3. The semiconductor device of claim 1 , where the memory cell comprises:
a source region
a drain region;
a first dielectric layer;
a charge storage layer;
a second dielectric layer; and
a conductive layer.
4. The semiconductor device of claim 3 , further comprising:
an interlayer dielectric layer formed on the conductive layer.
5. The semiconductor device of claim 4 , further comprising:
a trench in the interlayer dielectric layer formed to at least one of the source region or the drain region, the trench being filled with a conductive material.
6. The semiconductor device of claim 3 , where the contact reduces generation of electron-hole pairs in regions in the substrate adjacent the source region and the drain region during an etching process used to form the semiconductor device.
7. The semiconductor device of claim 1 , where the substrate comprises at least one of silicon, germanium, or silicon-germanium.
8. The semiconductor device of claim 3 , where the first dielectric layer comprises silicon oxide and includes a thickness ranging from about 70 Å to about 100 Å.
9. The semiconductor device of claim 3 , where the charge storage layer includes a silicon nitride, an oxide, or polycrystalline silicon, and has a thickness ranging from about 60 Å to about 90 Å.
10. The semiconductor device of claim 3 , where the second dielectric layer includes a silicon oxide or a silicon oxynitride, and includes a thickness ranging from about 70 Å to about 100 Å.
11. The semiconductor device of claim 1 , where the contact includes copper, aluminum, or tungsten.
12. A device comprising:
a substrate;
a source region formed in the substrate;
a drain region formed in the substrate;
an interlayer dielectric covering the source region and the drain region; and
at least one contact formed through the interlayer dielectric into the substrate away from the source region and the drain region.
13. The device of claim 12 , where the at least one contact is configured to raise a potential of the substrate during etching performed subsequent to formation of the contact.
14. The device of claim 12 , where the at least one contact is configured to reduce generation of electron-hole pairs in regions in the substrate adjacent the source region and the drain region during an etching process used to form the semiconductor device.
15. The device of claim 12 , further comprising:
a first dielectric layer;
a charge storage layer;
a second dielectric layer; and
a conductive layer.
16. The semiconductor device of claim 12 , where the at least one contact has a width ranging from about 250 Å to about 1000 Å.
17. The semiconductor device of claim 12 , where the at least one contact is formed through the interlayer dielectric into the substrate at a depth ranging from about 50 Å to about 200 Å.
18. A semiconductor device comprising:
a substrate;
a source region and a drain region;
a first dielectric layer;
a charge storage layer;
a second dielectric layer;
a conductive layer; and
a contact having a width ranging from about 250 Å to about 1000 Å and formed into the substrate at a depth ranging from about 50 Å to about 200 Å, where the contact is formed away from the source region and away from the drain region, and where the contact is to raise a potential of the substrate during etching performed subsequent to formation of the contact and reduce generation of electron-hole pairs in regions in the substrate adjacent the source region and the drain region during an etching process used to form the semiconductor device.
19. The semiconductor device of claim 18 , where the contact includes copper, aluminum, or tungsten.
20. A semiconductor device comprising:
a substrate;
a memory cell formed on the substrate, the memory cell comprising:
a source region;
a drain region;
a first dielectric layer;
a charge storage layer comprising at least one of a silicon nitride, an oxide, or polysilicon, where the charge storage layer has a thickness ranging from about 60 Å to about 90 Å;
a second dielectric layer; and
a conductive layer; and
a contact to the substrate, where the contact does not contact either the source region or the drain region, and where the contact is to raise a potential of the substrate during etching performed subsequent to formation of the contact.