Circuits and methods for improved FET matching
View Patent ↗Various embodiments of the present invention provide circuits and methods for improved FET matching. As one example, such methods may include providing two or more transistors. Each of the transistors includes a channel that varies in cross-sectional width from the source to the drain, and the transistors are matched one to another.
1. A transistor circuit, wherein the transistor circuit comprises:
a transistor pair, the transistor pair including:
a first transistor including:
a first drain having a first side and a second side;
a first source having a third side and a fourth side, wherein the first side is closer to the third side than to the fourth side, wherein the first side is closer to the third side than the second side is to the third side; and
a first channel extending between the first drain and the first source, wherein a cross-sectional width of the first channel at the third side of the first source is substantially less than a cross-sectional width of the first channel at the first side of the first drain, wherein the first drain is the closest drain disposed over the first channel to the third side, wherein a gate extends continuously from one lateral side of the gate to another lateral side of the gate, the gate extending across the first channel such that a cross-sectional width of the first channel at the one lateral side is greater than the cross-sectional width of the first channel at the other lateral side;
a second transistor including:
a second drain and a second source, wherein a second channel extends between the second drain and the second source, wherein a cross-sectional width of the second channel near the second source is less than a cross-sectional width of the second channel near the second drain, wherein the second drain includes a fifth side and a sixth side, wherein the second source includes a seventh side and an eighth side; wherein the fifth side is closer to the seventh side than to the eighth side; wherein the fifth side is closer to the seventh side than the sixth side is to the seventh side; wherein the second drain is the closest drain to the third side; wherein the second channel varies in cross-sectional width from the seventh side of the second source to the fifth side of the second drain.
2. The transistor pair of claim 1 , wherein the transistor pair is implemented as a differential pair, and wherein an area of the first channel is approximately the same as the area of the second channel.
3. The transistor pair of claim 1 , wherein the transistor pair is implemented as part of a current mirror, and wherein a proportional current provided by the current minor is a reference current multiplied by a ratio of an area of the first channel and an area of the second channel.
4. The transistor pair of claim 1 , wherein the first channel is physically shaped such that a first cross-sectional width of the first channel near the first source is less than a second cross-sectional width of the first channel near the first drain.
5. The transistor pair of claim 4 , wherein an edge of the first channel is selected from a group consisting of: a stepped edge and a smooth edge.
6. The transistor of claim 1 , wherein the first transistor and the second transistor are electrically coupled such that a transistor channel is an effective channel extending from a drain of one of the first transistor and the second transistor to a source of another of the first transistor and the second transistor.
7. The transistor of claim 6 , wherein the first transistor is a different size than the second transistor, wherein the effective channel has a first cross-sectional width near the source and a second cross-sectional width near the drain, and wherein the first cross-sectional width is less than the second cross-sectional width.
8. An electrical circuit, the electrical circuit comprising:
a first transistor, wherein the first transistor includes a first drain having a first side and a second side, and a first source having a third side and a fourth side; wherein the first side is closer to the third side than to the fourth side; wherein the first side is closer to the third side than the second side is to the third side; wherein the first transistor includes a first channel extending from the first drain to the first source, and wherein the first channel varies in cross-sectional width from the third side of the first source to the first side of the first drain; and
a second transistor, wherein the second transistor includes a second drain and a second source, wherein the second transistor includes a second channel extending from the second drain to the second source, and wherein the second channel varies in cross-sectional width from the second source to the second drain, and wherein the second drain is the closest drain to the third side.
9. The electrical circuit of claim 8 , wherein the first channel is shaped such that a first cross-sectional width of the first channel near the third side of the first source is less than a second cross-sectional width of the first channel near the first side of the first drain.
10. The electrical circuit of claim 8 , wherein the first transistor includes a plurality of component transistors, wherein the plurality of component transistors are electrically coupled such that the first channel is an effective channel extending from a drain of one of the plurality of component transistors to a source of another of the plurality of component transistors.
11. The electrical circuit of claim 8 , wherein the electrical circuit is a current mirror.
12. The electrical circuit of claim 8 , wherein the electrical circuit is a differential pair.
13. A transistor circuit, wherein the circuit comprises:
a first transistor including:
a first node and a second node; wherein the first node includes a first side and a second side; wherein the second node includes a third side and a fourth side; wherein the first side is closer to the third side than to the fourth side, wherein the first side is closer to the third side than the second side is to the third side; and
a first channel extending between the first node and the second node, wherein a cross-sectional width of the first channel near the first side of the first node is less than a cross-sectional width of the first channel near the third side of the second node,
a second transistor including:
a third node and a fourth node; and
a second channel extending between the third node and the fourth node, wherein a cross-sectional width of the second channel near the third node is less than a cross-sectional width of the second channel near the fourth node, wherein the fourth node includes a fifth side and a sixth side, wherein the third node includes a seventh side and an eighth side; wherein the fifth side is closer to the seventh side than to the eighth side; wherein the fifth side is closer to the seventh side than the sixth side is to the seventh side: wherein the fourth node is the closest drain to the first side; wherein the second channel varies in cross-sectional width from the seventh side of the third node to the fifth side of the fourth node; and
a gate disposed over both the first channel and the second channel, wherein the gate extends continuously from a first lateral side of the gate to a second lateral side of the gate, and wherein the gate extends across the first channel such that a cross-sectional width of the first channel at the first lateral side is greater than the cross-sectional width of the first channel at the second lateral side.
14. The circuit of claim 13 , wherein the first transistor further includes:
a fifth node and a sixth node;
a third channel extending between the fifth node and the sixth node, wherein a cross-sectional width of the third channel near the fifth node is less than a cross-sectional width of the third channel near the sixth node; and
wherein the gate is disposed over the third channel.
15. The circuit of claim 14 , wherein the first node is located nearer to the sixth node than to the fifth node.
16. The circuit of claim 13 , wherein the second transistor further includes:
a fifth node and a sixth node;
a third channel extending between the fifth node and the sixth node, wherein a cross-sectional width of the third channel near the fifth node is less than a cross-sectional width of the third channel near the sixth node; and
wherein the gate is disposed over the third channel.
17. The circuit of claim 16 , wherein the third node is located nearer to the sixth node than to the fifth node.
18. The circuit of claim 13 , wherein the first node is a first source of the first transistor, wherein the second node is a first drain of the first transistor, wherein the third node is a second source of the second transistor, and wherein the fourth node is a second drain of the second transistor.
19. The circuit of claim 13 , wherein the first transistor and the second transistor are implemented as a differential pair.
20. The circuit of claim 19 , wherein the area of the first channel is approximately the same as the area of the second channel.
21. The circuit of claim 13 , wherein the first transistor and the second transistor are part of a current mirror, and wherein a proportional current provided by the current mirror is a reference current multiplied by a ratio of the area of the first channel and the area of the second channel.
22. The circuit of claim 13 , wherein an edge of the first channel is selected from a group consisting of: a stepped edge and a smooth edge.
23. The circuit of claim 13 , wherein the first transistor includes a plurality of component transistors, wherein the plurality of component transistors are electrically coupled such that the channel is an effective channel extending from a drain of one of the plurality of component transistors to a source of another of the plurality of component transistors.
24. The circuit of claim 23 , wherein the plurality of component transistors includes transistors of at least two different sizes, wherein the effective channel has a first cross-sectional width near the source and a second cross-sectional width near the drain, and wherein the first cross-sectional width is less than the second cross-sectional width.
25. The transistor of claim 1 , wherein the first drain is closer to the second source than to the second drain.
26. The electrical circuit of claim 8 , wherein the first drain is closer to the second source than to the second drain.
27. The electrical circuit of claim 8 , wherein the second drain includes a fifth side and a sixth side, wherein the second source includes a seventh side and an eighth side; wherein the fifth side is closer to the seventh side than to the eighth side; wherein the fifth side is closer to the seventh side than the sixth side is to the seventh side; wherein the second channel varies in cross-sectional width from the seventh side of the second source to the fifth side of the second drain.
28. The circuit of claim 13 , wherein the gate extends across the second channel such that a cross-sectional width of the second channel at the first lateral side is less than the cross-sectional width of the second channel at the second lateral side.