IP Library Granted Patent US 7,760,558
Granted Patent B2
US 7,760,558 · App. 12/014,454 · Granted Jul 20, 2010

Voltage booster by isolation and delayed sequential discharge

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Quick Facts
Patent No.
US 7,760,558
App. No.
12/014,454
Granted
Jul 20, 2010
Kind
B2
Abstract

Systems and methods for improving efficiency of a voltage booster for read mode operations of memory cells and discharging a boosted supply voltage safely are disclosed. The system contains a plurality of boosting stages coupled in series including a plurality of boosting capacitors, a plurality of isolators. The isolator can be used to prevent boosting of one capacitor from negatively affecting a charge of the other adjacent capacitor to improve the efficiency of the voltage booster. A voltage booster circuit can accurately boost a supply voltage with a suitable number of boosting stages depending on a level of the supply voltage being provided. Since boosters contain a suitable number of boosting stages, the boosters can discharge a boosted voltage sequentially. With this sequential discharge method, memory cells can not have a hot switching problem.

Claims (54)

1. A method for boosting a supply voltage of memory cells, comprising:

employing a first boosting stage and a second boosting stage that are coupled in series to one another, the first boosting stage includes a first boosting capacitor and the second boosting stage includes a second boosting capacitor;

controlling at least one of the first boosting stage or the second boosting stage in a voltage booster circuit by comparing a level of the supply voltage;

the controlling includes at least one of the following:

an increase of the number of boosting stages when the level of the supply voltage is below a threshold value; or

a decrease of the number of boosting stages when the level of the supply voltage is above a threshold value;

detecting a boost to the supply voltage by at least one of the first boosting capacitor or the second boosting capacitor; and

utilizing an isolator to electrically isolate the first boosting capacitor and the second boosting capacitor from each other based upon the detected boost to the supply voltage by at least one of the first boosting capacitor or the second boosting capacitor, wherein the isolator is connected in series between the first boosting stage and the second boosting stage.

2. The method of claim 1 , wherein controlling at least one of the first boosting stage or the second boosting stage comprises:

sending at least one of an enable next stage signal or a disable next stage signal to a boosting stage in the voltage booster circuit according to a result of the comparisons; and

activating the boosting stage that receives the enable next stage signal or deactivating the boosting stage that receives the disable next stage signal.

3. The method of claim 1 , wherein at least one of the first boosting stage or the second boosting stage is turned on and in a charging stage when the level of the supply voltage is sampled.

4. The method of claim 1 , wherein activating the boosting stage that receives the enable next stage signal comprises receiving the supply voltage and charging the supply voltage.

5. The method of claim 1 , wherein deactivating the boosting stage that receives the disable next stage signal comprises turning off the boosting stage and stopping an operation of the boosting stage.

6. The method of claim 1 , wherein deactivating the boosting stage that receives the disable next stage signal prevents over boosting.

7. The method of claim 1 , wherein electrically isolating the first boosting capacitor and the second boosting capacitor from each other comprises turning on the isolator between the first boosting capacitor and the second boosting capacitor.

8. The method of claim 1 further comprising electrically isolating the first boosting capacitor and the second boosting capacitor from each other when one of the first boosting capacitor or the second boosting capacitor charges a supply voltage.

9. The method of claim 1 , wherein electrically isolating the first boosting capacitor and the second boosting capacitor from each other prevents boosting of one of the first boosting capacitor or the second boosting capacitor from negatively affecting a charge of the other capacitor.

10. The method of claim 1 , further comprising:

activating the boosting stage that receives the enable next stage signal comprises receiving the supply voltage and charging the supply voltage; and

deactivating the boosting stage that receives the disable next stage signal comprises turning off the boosting stage and stopping an operation of the boosting stage.

11. A method for discharging a boosted voltage of a boosting circuit comprising two or more capacitors, comprising:

employing a first discharging stage and a second discharging stage that are coupled in series to one another, the first discharging stage includes a first capacitor and the second discharging stage includes a second capacitor, wherein the first capacitor and the second capacitor are fully charged;

utilizing an isolator to electrically isolate the first capacitor and the second capacitor from each other, wherein the isolator is connected in series between the first discharging stage and the second discharging stage;

evaluating a boost voltage related to a capacitor within a discharging stage of the boosting circuit;

discharging the capacitor that has a lowest boosted voltage in comparison to a disparate capacitor within the discharging stages in the boosting circuit.

12. The method of claim 11 , further comprising:

sequentially discharging the capacitors that did not have the lowest boosted voltage within the discharging stages with a single and shared VCC.

13. The method of claim 12 , further comprising:

identifying the capacitor with a next lowest boosted voltage in comparison to a disparate capacitor within the discharging stages in the boosting circuit that has not been discharged;

measuring a level of a supply voltage for the boosting circuit;

discharging the capacitor with the next lowest boosted voltage until a potential across all the capacitors in the boosting circuit equal the level of the supply voltage.

14. The method of claim 11 , further comprising:

ranking the capacitors from low to high in regards to an amount of a boosted voltage;

discharging the capacitors sequentially and one-by-one based on the ranking of the capacitors until potentials across all the capacitors in the boosting circuit equal a level of a supply voltage, the potentials across the capacitors is measured in between the sequential discharging of capacitors.

15. The method of claim 11 , wherein electrically isolating the first capacitor and the second capacitor from each other includes turning on the isolator.

16. A voltage booster circuit of a memory device, comprising:

a first boosting stage that includes a first boosting capacitor;

a second boosting stage that includes a second boosting capacitor;

a third boosting stage that includes a third boosting capacitor;

a first isolator connected in series between the first boosting stage and the second boosting stage, the first isolator electrically isolates the first boosting capacitor from the second boosting capacitor;

a second isolator connected in series between the second boosting stage and the third boosting stage, the second isolator electrically isolates the second boosting capacitor from the third boosting capacitor;

an analog-to-digital converter (ADC) that controls at least one of the boosting stages in the voltage booster circuit by comparing a level of a supply voltage;

the ADC provides at least one of the following:

an increase of the number of boosting stages when the level of the supply voltage is below a threshold value; or

a decrease of the number of boosting stages when the level of the supply voltage is above a threshold value;

the first isolator is activated to isolate when at least one of the first boosting capacitor or the second boosting capacitor boosts a supply voltage or discharges a boosted voltage; and

the second isolator is activated to isolate when at least one of the second boosting capacitor or the third boosting capacitor boosts a supply voltage or discharges a boosted voltage.

17. The voltage booster circuit of claim 16 , wherein the ADC comprises a level detector that measures at least one of a level of the supply voltage or a total output voltage.

18. The voltage booster circuit of claim 16 , wherein the voltage boosting circuit comprises a set of pulse signal pumps.

19. The voltage booster circuit of claim 16 , further comprising:

an additional boosting stage that includes an additional boosting capacitor; and

an additional isolator connected in series between the third boosting stage and the additional boosting stage, the additional isolator electrically isolates the third boosting capacitor from the additional boosting capacitor.

20. The voltage booster circuit of claim 16 , further comprising the additional isolator is activated to isolate when at least one of the third boosting capacitor or the additional boosting capacitor boosts a supply voltage or discharges a boosted voltage.

Assignments (9)
CORRECTIVE ASSIGNMENT TO CORRECT THE 8647899 PREVIOUSLY RECORDED ON REEL 035240 FRAME 0429. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTERST. Recorded Nov 3, 2020
From: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 058002/0470 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN INTELLECTUAL PROPERTY Recorded Oct 28, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: MUFG UNION BANK, N.A.
Reel/Frame 050896/0366 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 23, 2019
From: CYPRESS SEMICONDUCTOR CORPORATION
To: LONGITUDE FLASH MEMORY SOLUTIONS LIMITED
Reel/Frame 050799/0215 →
PARTIAL RELEASE OF SECURITY INTEREST IN PATENTS Recorded Sep 26, 2019
From: MUFG UNION BANK, N.A., AS COLLATERAL AGENT
To: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
Reel/Frame 050500/0369 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 1, 2015
From: SPANSION, LLC
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 036043/0013 →
SECURITY INTEREST Recorded Mar 21, 2015
From: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 035240/0429 →
RELEASE OF SECURITY INTEREST Recorded Mar 13, 2015
From: BARCLAYS BANK PLC
To: SPANSION LLC; SPANSION INC.; SPANSION TECHNOLOGY LLC
Reel/Frame 035201/0159 →
SECURITY AGREEMENT Recorded Jun 4, 2010
From: SPANSION LLC; SPANSION INC.; SPANSION TECHNOLOGY INC.; SPANSION TECHNOLOGY LLC
To: BARCLAYS BANK PLC
Reel/Frame 024522/0338 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 15, 2008
From: CH'NG, CHIN-GHEE; TANG, KUAN-CHENG
To: SPANSION LLC
Reel/Frame 020367/0578 →