Semiconductor device having electrical devices mounted to IPD structure and method for shielding electromagnetic interference
View Patent ↗A semiconductor device is made by forming an integrated passive device (IPD) structure on a substrate, mounting first and second electrical devices to a first surface of the IPD structure, depositing encapsulant over the first and second electrical devices and IPD structure, forming a shielding layer over the encapsulant, and electrically connecting the shielding layer to a conductive channel in the IPD structure. The conductive channel is connected to ground potential to isolate the first and second electrical devices from external interference. A recess can be formed in the encapsulant material between the first and second electrical devices. The shielding layer extends into the recess. An interconnect structure is formed on a second surface of the IPD structure. The interconnect structure is electrically connected to the first and second electrical devices and IPD structure. A shielding cage can be formed over the first electrical device prior to depositing encapsulant.
1. A method of making a semiconductor device, comprising:
providing a substrate;
forming an integrated passive device (IPD) structure on the substrate;
mounting first and second electrical devices to a first surface of the IPD structure;
depositing an encapsulant over the first and second electrical devices and IPD structure;
forming a shielding layer over the encapsulant;
electrically connecting the shielding layer to a conductive channel in the IPD structure to isolate the first and second electrical devices from interference;
removing the substrate; and
forming an interconnect structure on a second surface of the IPD structure opposite the first surface of the IPD structure, the interconnect structure being electrically connected to the first and second electrical devices and IPD structure.
2. The method of claim 1 , further including mounting a third electrical device to the second surface of the IPD structure.
3. The method of claim 2 , further including electrically connecting the first, second, and third electrical devices to conductive channels in the IPD structure.
4. The method of claim 2 , further including forming a shielding cage over the third electrical device.
5. The method of claim 1 , further including electrically connecting the conductive channel to ground potential.
6. The method of claim 1 , further including:
removing a portion of the encapsulant material between the first and second electrical devices to form a recess prior to forming the shielding layer; and
forming the shielding layer over the encapsulant and in the recess.
7. The method of claim 1 , further including forming a shielding cage over the first electrical device prior to depositing the encapsulant.
8. A method of making a semiconductor device, comprising:
providing an integrated passive device (IPD) structure;
mounting a first electrical device to a first surface of the IPD structure;
depositing an encapsulant over the first electrical device and IPD structure;
forming a shielding layer over the encapsulant; and
electrically connecting the shielding layer to a conductive channel in the IPD structure to isolate the first electrical device from interference.
9. The method of claim 8 , further including forming an interconnect structure on a second surface of the IPD structure opposite the first surface of the IPD structure, the interconnect structure being electrically connected to the first electrical device and IPD structure.
10. The method of claim 9 , further including mounting a second electrical device to the second surface of the IPD structure.
11. The method of claim 10 , further including electrically connecting the first and second electrical devices to conductive channels in the IPD structure.
12. The method of claim 10 , further including forming a shielding cage over the second electrical device.
13. The method of claim 8 , further including electrically connecting the conductive channel to ground potential.
14. The method of claim 8 , further including:
mounting a second electrical device to the first surface of the IPD structure;
removing a portion of the encapsulant material between the first and second electrical devices to form a recess prior to forming the shielding layer; and
forming the shielding layer over the encapsulant and in the recess.
15. The method of claim 8 , further including forming a shielding cage over the first electrical device prior to depositing the encapsulant.
16. A method of making a semiconductor device, comprising:
providing an integrated passive device (IPD) structure;
mounting a first electrical device to a first surface of the IPD structure;
depositing an encapsulant over the first electrical device and IPD structure;
forming a shielding layer over the encapsulant;
forming an interconnect structure on a second surface of the IPD structure opposite the first surface of the IPD structure, the interconnect structure being electrically connected to the first electrical device and IPD structure; and
electrically connecting the shielding layer to a conductive channel in the IPD structure to isolate the first electrical device from interference.
17. The method of claim 16 , further including electrically connecting the conductive channel to ground potential.
18. The method of claim 16 , further including:
mounting a second electrical device to the first surface of the IPD structure;
removing a portion of the encapsulant material between the first and second electrical devices to form a recess prior to forming the shielding layer; and
forming the shielding layer over the encapsulant and in the recess.
19. The method of claim 16 , further including forming a shielding cage over the first electrical device prior to depositing the encapsulant.