Semiconductor device and method of forming stepped-down RDL and recessed THV in peripheral region of the device
View Patent ↗A semiconductor die has a peripheral region around the die. An insulating layer is formed over the semiconductor die. A portion of the insulating layer and peripheral is removed to form a recess around the semiconductor die. A conductive layer is deposited over the insulating layer and recess. The conductive layer is electrically connected to contact pads on the semiconductor die and conforms to a step into the recess. A gap is created through the conductive layer and peripheral region around the semiconductor die. An insulating material is deposited in the gap. A portion of the insulating material is removed to form a through hole via (THV). A conductive material is deposited in the THV to form a conductive THV. The conductive THV is recessed with respect to a surface of the semiconductor die. The conductive THV is electrically connected to the conductive layer.
1. A method of making a semiconductor device, comprising:
providing a semiconductor wafer having a plurality of semiconductor die each with a peripheral region around the semiconductor die;
forming an insulating layer over the semiconductor wafer;
removing a portion of the insulating layer and peripheral region to form a recess around the semiconductor die;
depositing a first conductive layer over the insulating layer and recess, the first conductive layer being electrically connected to contact pads on the semiconductor die and conforming to a step into the recess;
creating a gap through the first conductive layer and peripheral region around the semiconductor die;
depositing an insulating material in the gap;
removing a portion of the insulating material to form a through hole via (THV);
depositing a conductive material in the THV to form a conductive THV, the conductive THV being recessed with respect to a surface of the semiconductor die, the conductive THV being electrically connected to the first conductive layer; and
singulating the semiconductor wafer through the gap to separate the semiconductor die.
2. The method of claim 1 , wherein singulating the semiconductor wafer occurs through the conductive THV in the gap to form a conductive half-via.
3. The method of claim 1 , wherein singulating the semiconductor wafer occurs through the insulating material in the gap to form a conductive full-via.
4. The method of claim 1 , further including forming a masking layer over the insulating material prior to depositing the conductive material.
5. The method of claim 1 , further including removing a portion of the insulating layer to expose the contact pads.
6. The method of claim 1 , wherein creating the gap includes:
cutting through the semiconductor wafer less than a width of the peripheral region around the semiconductor die; and
moving the semiconductor die apart to expand the gap.
7. The method of claim 1 , further including forming a second conductive layer over the insulating material and conductive material to electrically connect the conductive material to the first conductive layer.
8. A method of making a semiconductor device, comprising:
providing a semiconductor wafer having a plurality of semiconductor die each with a peripheral region around the semiconductor die;
forming an insulating layer over the semiconductor wafer;
removing a portion of the insulating layer and peripheral region to form a recess around the semiconductor die;
creating a gap through the peripheral region around the semiconductor die;
depositing an insulating material in the gap;
depositing a conductive layer over the insulating layer and insulating material, the conductive layer being electrically connected to contact pads on the semiconductor die;
removing a portion of the insulating material to form a through hole via (THV);
depositing a conductive material in the THV to form a conductive THV, the conductive THV being electrically connected to the conductive layer; and
singulating the semiconductor wafer through the gap to separate the semiconductor die.
9. The method of claim 8 , wherein singulating the semiconductor wafer occurs through the conductive THV in the gap to form a conductive half-via.
10. The method of claim 8 , wherein singulating the semiconductor wafer occurs through the insulating material in the gap to form a conductive full-via.
11. The method of claim 8 , further including forming a masking layer over the insulating material prior to depositing the conductive material.
12. The method of claim 8 , further including removing a portion of the insulating layer to expose the contact pads.
13. The method of claim 8 , wherein creating the gap includes:
cutting through the semiconductor wafer less than a width of the peripheral region around the semiconductor die; and
moving the semiconductor die apart to expand the gap.
14. A method of making a semiconductor device, comprising:
providing a semiconductor die having a peripheral region around the semiconductor die;
forming an insulating layer over the semiconductor die;
removing a portion of the insulating layer and peripheral region to form a recess around the semiconductor die;
depositing a first conductive layer over the insulating layer and recess, the first conductive layer being electrically connected to contact pads on the semiconductor die and conforming to a step into the recess;
creating a gap through the first conductive layer and peripheral region around the semiconductor die;
depositing an insulating material in the gap;
removing a portion of the insulating material to form a through hole via (THV); and
depositing a conductive material in the THV to form a conductive THV, the conductive THV being recessed with respect to a surface of the semiconductor die, the conductive THV being electrically connected to the first conductive layer.
15. The method of claim 14 , wherein singulating the semiconductor wafer occurs through the conductive THV to form a conductive half-via.
16. The method of claim 14 , wherein singulating the semiconductor wafer occurs through the insulating material in the gap to form a conductive full-via.
17. The method of claim 14 , further including forming a masking layer over the insulating material prior to depositing the conductive material.
18. The method of claim 14 , further including removing a portion of the insulating layer to expose the contact pads.
19. The method of claim 14 , wherein creating the gap includes:
cutting through the semiconductor wafer less than a width of the peripheral region around the semiconductor die; and
moving the semiconductor die apart to expand the gap.
20. The method of claim 14 , further including forming a second conductive layer over the insulating material and conductive material to electrically connect the conductive material to the first conductive layer.