Semiconductor device and method of forming an interconnect structure for 3-D devices using encapsulant for structural support

1. A method of making a semiconductor device, comprising:

providing a substrate;

forming a first interconnect structure over a first side of the substrate by,

(a) forming a first conductive layer over the first side of the substrate,

(b) forming a first insulating layer over the first conductive layer and substrate,

(c) removing a portion of the first insulating layer to expose the first conductive layer,

(d) forming a second conductive layer over the first conductive layer,

(e) forming a second insulating layer over the second conductive layer and first insulating layer, and

(f) removing a portion of the second insulating layer to expose the second conductive layer;

mounting a semiconductor die or component to the first interconnect structure;

depositing an encapsulant over the semiconductor die or component and first interconnect structure;

removing a portion of a second side of the substrate, opposite the first side of the substrate, to reduce its thickness;

forming a through silicon via (TSV) through the second side of the substrate to the first interconnect structure; and

forming a second interconnect structure over the TSV.

2. The method of claim 1 , wherein forming the first interconnect structure further includes:

forming a conductive pillar over the second conductive layer;

forming a third insulating layer around the conductive pillar;

forming a third conductive layer over the conductive pillar; and

electrically connecting the semiconductor die or component to the third conductive layer.

3. The method of claim 1 , further including mounting the semiconductor device to a printed circuit board through the second interconnect structure.

4. A method of making a semiconductor device, comprising:

providing a substrate;

forming a first interconnect structure over a first side of the substrate;

mounting a semiconductor die or component to the first interconnect structure;

depositing an encapsulant over the semiconductor die or component and first interconnect structure;

removing a portion of a second side of the substrate, opposite the first side of the substrate, to reduce its thickness;

forming a through silicon via (TSV) through the second side of the substrate to the first interconnect structure by,

(a) forming a first insulating layer over the second side of the substrate, and

(b) removing a portion of the first insulating layer over the first interconnect structure; and

forming a second interconnect structure over the TSV.

5. The method of claim 4 , wherein forming the second interconnect structure includes forming a first conductive layer over the first insulating layer and into the TSV.

6. The method of claim 5 , wherein forming the second interconnect structure further includes:

forming a second conductive layer over the first conductive layer in an area away from the TSV; and

forming a solder bump on the second conductive layer.

7. A method of making a semiconductor device, comprising:

providing a substrate;

forming a first interconnect structure over the substrate by,

(a) forming a first conductive layer over the substrate,

(b) forming a first insulating layer over the first conductive layer and substrate,

(c) removing a portion of the first insulating layer to expose the first conductive layer,

(d) forming a second conductive layer over the first conductive layer,

(e) forming a second insulating layer over the second conductive layer and first insulating layer, and

(f) removing a portion of the second insulating layer to expose the second conductive layer;

mounting a semiconductor die or component to the first interconnect structure;

depositing an encapsulant over the semiconductor die or component and first interconnect structure;

removing at least a portion of the substrate to expose the first interconnect structure; and

forming a second interconnect structure over the first interconnect structure.

8. The method of claim 7 , wherein forming the first interconnect structure further includes:

forming a conductive pillar over the second conductive layer;

forming a third insulating layer around the conductive pillar;

forming a third conductive layer over the conductive pillar; and

electrically connecting the semiconductor die or component to the third conductive layer.

9. The method of claim 7 , further including mounting the semiconductor device to a printed circuit board through the second interconnect structure.

10. The method of claim 9 , wherein the semiconductor die or component is electrically connected to the printed circuit board through the first and second interconnect structures.

11. A method of making a semiconductor device, comprising:

providing a substrate;

forming a first interconnect structure over the substrate;

mounting a semiconductor die or component to the first interconnect structure;

depositing an encapsulant over the semiconductor die or component and first interconnect structure;

removing at least a portion of the substrate to expose the first interconnect structure; and

forming a second interconnect structure over the first interconnect structure by,

(a) forming a first insulating layer over the first interconnect structure,

(b) removing a portion of the first insulating layer, and

(c) forming a first conductive layer over the first insulating layer in the removed portion of the first insulating layer.

12. A method of making a semiconductor device, comprising:

providing a substrate;

forming a first interconnect structure over a first side of the substrate;

mounting a semiconductor die or component to the first interconnect structure;

depositing an encapsulant over the semiconductor die or component and first interconnect structure;

removing a portion of a second side of the substrate, opposite the first side of the substrate; and

forming a conductive through silicon via (TSV) through the substrate and electrically connecting the conductive TSV to the first interconnect structure by,

(a) forming a first insulating layer over the second side of the substrate, and

(b) removing a portion of the first insulating layer over the first interconnect structure.

13. The method of claim 12 , further including:

forming a second interconnect structure over the second side of the substrate; and

electrically connecting the second interconnect structure to the conductive TSV.

14. The method of claim 13 , wherein forming the second interconnect structure includes forming a first conductive layer over the first insulating layer and into the TSV.

15. The method of claim 13 , further including mounting the semiconductor device to a printed circuit board through the second interconnect structure.

16. The method of claim 12 , wherein forming the first interconnect structure includes:

forming a first conductive layer over the first side of the substrate;

forming a first insulating layer over the first conductive layer and substrate;

removing a portion of the first insulating layer to expose the first conductive layer;

forming a second conductive layer over the first conductive layer;

forming a second insulating layer over the second conductive layer and first insulating layer; and

removing a portion of the second insulating layer to expose the second conductive layer.

17. The method of claim 16 , wherein forming the first interconnect structure further includes:

forming a conductive pillar over the second conductive layer;

forming a third insulating layer around the conductive pillar;

forming a third conductive layer over the conductive pillar; and

electrically connecting the semiconductor die or component to the third conductive layer.