Semiconductor device and method of forming a vertical interconnect structure for 3-D FO-WLCSP
View Patent ↗A semiconductor device is made by forming a first conductive layer over a carrier. The first conductive layer has a first area electrically isolated from a second area of the first conductive layer. A conductive pillar is formed over the first area of the first conductive layer. A semiconductor die or component is mounted to the second area of the first conductive layer. A first encapsulant is deposited over the semiconductor die and around the conductive pillar. A first interconnect structure is formed over the first encapsulant. The first interconnect structure is electrically connected to the conductive pillar. The carrier is removed. A portion of the first conductive layer is removed. The remaining portion of the first conductive layer includes an interconnect line and UBM pad. A second interconnect structure is formed over a remaining portion of the first conductive layer is removed.
1. A method of making a semiconductor device, comprising:
providing a temporary carrier;
depositing an interface layer over the temporary carrier;
forming a first conductive layer over the interface layer, the first conductive layer having a first area electrically isolated from a second area of the first conductive layer;
forming a conductive pillar over the first area of the first conductive layer;
mounting a semiconductor die or component to the second area of the first conductive layer;
depositing an encapsulant over the semiconductor die and around the conductive pillar;
forming a first interconnect structure over the encapsulant, the first interconnect structure being electrically connected to the conductive pillar;
removing the temporary carrier and interface layer;
removing a portion of the first area of the first conductive layer; and
forming a second interconnect structure over a remaining portion of the first conductive layer.
2. The method of claim 1 , wherein the first conductive layer includes a plurality of conductive layers.
3. The method of claim 1 , further including forming a second conductive layer over the first conductive layer.
4. The method of claim 3 , wherein the second conductive layer includes a plurality of conductive layers.
5. The method of claim 1 , wherein forming the first interconnect structure includes:
forming a first insulating layer over the encapsulant;
forming a second conductive layer over the first insulating layer, the second conductive layer being electrically connected to the conductive pillars; and
forming a second insulating layer over the second conductive layer.
6. The method of claim 1 , wherein the remaining portion of the first conductive layer includes an interconnect line and under bump metallization pad.
7. The method of claim 1 , further including forming a solder bump over the conductive pillar.
8. A method of making a semiconductor device, comprising:
providing a carrier;
forming a first conductive layer over the carrier, the first conductive layer having a first area electrically isolated from a second area of the first conductive layer;
forming a conductive pillar over the first area of the first conductive layer;
mounting a semiconductor die or component to the second area of the first conductive layer;
depositing a first encapsulant over the semiconductor die and around the conductive pillar;
forming a first interconnect structure over the first encapsulant, the first interconnect structure being electrically connected to the conductive pillar;
removing the carrier; and
removing a portion of the first area of the first conductive layer.
9. The method of claim 8 , further including forming a second interconnect structure over a remaining portion of the first conductive layer.
10. The method of claim 9 , wherein the remaining portion of the first conductive layer includes an interconnect line and under bump metallization pad.
11. The method of claim 8 , wherein the first conductive layer includes a plurality of conductive layers.
12. The method of claim 8 , further including forming a second conductive layer over the first conductive layer.
13. The method of claim 12 , wherein the second conductive layer includes a plurality of conductive layers.
14. The method of claim 8 , further including forming a solder bump over the conductive pillar.
15. The method of claim 8 , further including forming a second encapsulant over the first encapsulant.
16. A method of making a semiconductor device, comprising:
providing a carrier;
forming a conductive pillar over the carrier;
mounting a semiconductor die or component to the carrier;
depositing a first encapsulant over the semiconductor die and around the conductive pillar;
forming a first interconnect structure over the first encapsulant, the first interconnect structure being electrically connected to the conductive pillar; and
removing the carrier.
17. The method of claim 16 , further including:
forming a first conductive layer over the carrier, the first conductive layer having a first area electrically isolated from a second area of the first conductive layer; and
removing a portion of the first area of the first conductive layer after removing the carrier.
18. The method of claim 17 , further including forming a second interconnect structure over a remaining portion of the first conductive layer.
19. The method of claim 16 , further including forming a solder bump over the conductive pillar.
20. The method of claim 16 , further including forming a second encapsulant over the first encapsulant.