Metal oxide semiconductor devices having doped silicon-compromising capping layers and methods for fabricating the same
View Patent ↗Methods are provided for forming a semiconductor device comprising a semiconductor substrate. In accordance with an exemplary embodiment, a method comprises the steps of forming a high-k dielectric layer overlying the semiconductor substrate, forming a metal-comprising gate layer overlying the high-k dielectric layer, forming a doped silicon-comprising capping layer overlying the metal-comprising gate layer, and depositing a silicon-comprising gate layer overlying the doped silicon-comprising capping layer.
1. A method for forming a semiconductor device comprising a semiconductor substrate, wherein the method comprises the steps of:
forming a high dielectric constant layer overlying the semiconductor substrate;
forming a metal-comprising gate layer overlying the high dielectric constant layer;
forming an in situ doped silicon-comprising capping layer overlying the metal-comprising gate layer;
forming a silicide-forming metal capping layer; and
depositing a silicon-comprising gate layer overlying the in situ doped silicon-comprising capping layer and the silicide-forming metal capping layer, wherein the silicide-forming metal capping layer is interposed between the doped silicon-comprising capping layer and the silicon-comprising gate layer.
2. The method of claim 1 , wherein the step of forming a silicide-forming metal capping layer comprises forming a silicide-forming metal capping layer comprising a metal selected from a group consisting of nickel (Ni), platinum (Pt), cobalt (Co), titanium (Ti), and a combination thereof.
3. The method of claim 2 , wherein the step of forming a silicide-forming metal capping layer comprises forming a silicide-forming metal capping layer comprising nickel-platinum (NiPt).
4. The method of claim 3 , wherein the step of forming a nickel-platinum (NiPt) layer comprises forming a nickel-platinum (NiPt) layer having a platinum (Pt) concentration of from about 5 atomic % to about 15 atomic %.
5. The method of claim 1 , further comprising the step of heating the semiconductor substrate, the step of heating performed after the step of depositing.
6. The method of claim 1 , further comprising the step of forming a gate insulator layer overlying the semiconductor substrate before the step of forming a high dielectric constant layer.
7. The method of claim 6 , further comprising the step of forming a channel layer comprising a compressively-stressed monocrystalline layer.
8. The method of claim 6 , further comprising the step of forming a channel layer comprising a tensile-stressed monocrystalline layer.
9. The method of claim 1 , wherein the step of forming a doped silicon-comprising capping layer comprises forming a doped silicon-comprising capping layer comprising a doping element selected from a group consisting of boron (B), arsenic (As), phosphorous (P), and antimony (Sb).
10. The method of claim 1 , wherein the step of forming a doped silicon-comprising capping layer comprises forming a doped silicon-comprising capping layer comprising a doping element having a concentration of from about 1×10 19 atom/cm 3 to about 1×10 20 atom/cm 3 .
11. The method of claim 1 , further comprising the step of forming a metal oxide gate capping layer interposed between the high dielectric constant layer and the metal-comprising gate layer.
12. A method of fabricating a semiconductor device on a semiconductor substrate having a first region and a second region, the method comprising the steps of:
forming a channel layer comprising a compressively-stressed semiconductor material overlying the second region of the semiconductor substrate;
forming a high dielectric constant layer overlying the first region of the semiconductor substrate and the channel layer;
depositing a metal-comprising gate layer overlying the high dielectric constant layer;
forming an in situ doped silicon capping layer overlying the metal-comprising gate layer;
forming a silicide-forming metal capping layer;
forming a silicon-comprising gate layer overlying the in situ doped silicon capping layer and the silicide-forming metal capping layer, wherein the silicide-forming metal capping layer is interposed between the in situ doped silicon capping layer and the silicon-comprising gate layer; and
heating the substrate.
13. The method of claim 12 , wherein the step of forming a silicide-forming metal capping layer comprises forming a silicide-forming metal capping layer comprising a metal selected from a group consisting of nickel (Ni), platinum (Pt), cobalt (Co), titanium (Ti), and a combination thereof.
14. The method of claim 12 , further comprising the step of forming a metal oxide gate capping layer interposed between the high dielectric constant layer and the metal-comprising gate layer in the first region.
15. The method of claim 12 , further comprising the step of forming a first metal-comprising layer interposed between the high dielectric constant layer and the metal-comprising gate layer in the second region.
16. The method of claim 12 , wherein the step of heating the substrate comprises heating the substrate to a temperature of at least about 400° C. for more than about 5 seconds.
17. A semiconductor device having a gate stack overlying a semiconductor substrate, the gate stack comprising:
a high dielectric constant layer disposed overlying the semiconductor substrate;
a metal-comprising gate layer disposed overlying the high dielectric constant layer;
a doped silicon capping layer disposed overlying the metal-comprising gate layer;
a silicon-comprising gate layer overlying the doped silicon capping layer; and
a silicide-forming metal capping layer interposed between the doped silicon-comprising capping layer and the silicon-comprising gate layer.
18. A method for forming a semiconductor device comprising a semiconductor substrate, wherein the method comprises the steps of:
forming a high dielectric constant layer overlying the semiconductor substrate;
forming a metal-comprising gate layer overlying the high dielectric constant layer;
forming a doped silicon-comprising capping layer overlying the metal-comprising gate layer;
forming a silicide-forming metal capping layer overlying the doped silicon-comprising capping layer; and
depositing a silicon-comprising gate layer overlying the doped silicon-comprising capping layer, wherein the silicide-forming metal capping layer is interposed between the doped silicon-comprising capping layer and the silicon-comprising gate layer.
19. The method of claim 18 , wherein the step of forming a silicide-forming metal capping layer comprises forming a silicide-forming metal capping layer comprising a metal selected from a group consisting of nickel (Ni), platinum (Pt), cobalt (Co), titanium (Ti), and a combination thereof.
20. The method of claim 19 , wherein the step of forming a silicide-forming metal capping layer comprises forming a silicide-forming metal capping layer comprising nickel-platinum (NiPt).
21. The method of claim 20 , wherein the step of forming a nickel-platinum (NiPt) layer comprises forming a nickel-platinum (NiPt) layer having a platinum (Pt) concentration of from about 5 atomic % to about 15 atomic %.
22. A semiconductor device having a gate stack overlying a semiconductor substrate, the gate stack comprising:
a high dielectric constant layer disposed overlying the semiconductor substrate;
a metal-comprising gate layer overlying the high dielectric constant layer;
a doped silicon capping layer directly overlying and in contact with the metal-comprising gate layer;
a silicide-forming metal capping layer; and
a silicon-comprising gate layer directly overlying the silicide-forming metal capping layer.
23. The semiconductor device of claim 22 , wherein the silicide-forming metal capping layer is interposed between the doped silicon capping layer and the silicon-comprising gate layer.