Semiconductor device and method of providing z-interconnect conductive pillars with inner polymer core
View Patent ↗A semiconductor device is made by providing a sacrificial substrate and depositing an adhesive layer over the sacrificial substrate. A first conductive layer is formed over the adhesive layer. A polymer pillar is formed over the first conductive layer. A second conductive layer is formed over the polymer pillar to create a conductive pillar with inner polymer core. A semiconductor die or component is mounted over the substrate. An encapsulant is deposited over the semiconductor die or component and around the conductive pillar. A first interconnect structure is formed over a first side of the encapsulant. The first interconnect structure is electrically connected to the conductive pillar. The sacrificial substrate and adhesive layers are removed. A second interconnect structure is formed over a second side of the encapsulant opposite the first interconnect structure. The second interconnect structure is electrically connected to the conductive pillar.
1. A method of making a semiconductor device, comprising:
providing a sacrificial substrate;
depositing an interface layer over the sacrificial substrate;
forming a first conductive layer over the interface layer;
forming a first polymer pillar over the first conductive layer;
forming a second conductive layer over the first polymer pillar to create a first conductive pillar with inner polymer core;
mounting a semiconductor die or component over the sacrificial substrate;
depositing an encapsulant over the semiconductor die or component and around the first conductive pillar;
forming a first interconnect structure over a first side of the encapsulant, the first interconnect structure being electrically connected to the first conductive pillar;
removing the sacrificial substrate and interface layer; and
forming a second interconnect structure over a second side of the encapsulant opposite the first interconnect structure, the second interconnect structure being electrically connected to the first conductive pillar.
2. The method of claim 1 , wherein the first interconnect structure includes an integrated passive device.
3. The method of claim 1 , further including:
forming a second polymer pillar over a contact pad of the semiconductor die; and
forming the second conductive layer over the second polymer pillar to create a second conductive pillar with inner polymer core.
4. The method of claim 1 , further including:
stacking a plurality of semiconductor devices; and
electrically connecting the semiconductor devices through the first and second interconnect structures and first conductive pillar.
5. The method of claim 1 , wherein forming the first interconnect structure includes:
forming a first insulating layer over the encapsulant;
forming a third conductive layer over the first insulating layer, the third conductive layer being electrically connected to the first conductive pillar; and
forming a second insulating layer over the third conductive layer.
6. A method of making a semiconductor device, comprising:
providing a substrate;
forming a first conductive layer over the substrate;
forming a first polymer pillar over the first conductive layer;
forming a second conductive layer over the first polymer pillar to create a first conductive pillar with an inner stress-relief core;
mounting a semiconductor die or component over the substrate;
depositing an encapsulant over the semiconductor die or component and around the first conductive pillar;
forming a first interconnect structure over a first side of the encapsulant, the first interconnect structure being electrically connected to the first conductive pillar; and
forming a second interconnect structure over a second side of the encapsulant opposite the first interconnect structure, the second interconnect structure being electrically connected to the first conductive pillar.
7. The method of claim 6 , wherein the first interconnect structure includes an integrated passive device.
8. The method of claim 7 , wherein the integrated passive device includes a capacitor, resistor, or inductor.
9. The method of claim 6 , wherein forming the first interconnect structure includes:
forming a first insulating layer over the encapsulant;
forming a third conductive layer over the first insulating layer, the third conductive layer being electrically connected to the first conductive pillar; and
forming a second insulating layer over the third conductive layer.
10. A method of making a semiconductor device, comprising:
providing a substrate;
forming a first conductive layer over the substrate;
forming a first polymer pillar over the first conductive layer;
forming a second conductive layer over the first polymer pillar to create a first conductive pillar with an inner stress-relief core;
mounting a semiconductor die or component over the substrate;
depositing an encapsulant over the semiconductor die or component and around the first conductive pillar; and
forming a first interconnect structure over a first side of the encapsulant, the first interconnect structure being electrically connected to the first conductive pillar.
11. The method of claim 10 , further including forming a second interconnect structure over a second side of the encapsulant opposite the first interconnect structure, the second interconnect structure being electrically connected to the first conductive pillar.
12. The method of claim 10 , wherein the first interconnect structure includes an integrated passive device.
13. A method of making a semiconductor device, comprising:
providing a substrate;
forming a first conductive layer over the substrate;
forming a first polymer pillar over the first conductive layer;
forming a second conductive layer over the first polymer pillar to create a first conductive pillar with an inner stress-relief core;
mounting a semiconductor die or component over the substrate; and
depositing an encapsulant over the semiconductor die or component and around the first conductive pillar.
14. The method of claim 13 , further comprising forming a first interconnect structure over a first side of the encapsulant.
15. The method of claim 14 , wherein the first interconnect structure is electrically connected to the first conductive pillar.
16. The method of claim 15 , wherein the first interconnect structure includes an IPD.
17. The method of claim 16 , further comprising forming a second interconnect structure over a second side of the encapsulant opposite the first interconnect structure.
18. The method of claim 17 , wherein the second interconnect structure is electrically connected to the first conductive pillar.
19. The method of claim 18 , wherein providing a substrate comprises providing a sacrificial substrate.
20. The method of claim 19 , further comprising removing the sacrificial substrate.
21. The method of claim 20 , further comprising depositing an interface layer over the sacrificial substrate.
22. The method of claim 21 , further comprising removing the interface layer.