Semiconductor Substrate and Method of Forming Conformal Solder Wet-Enhancement Layer on Bump-on-Lead Site
A semiconductor substrate includes a first conductive layer formed over the semiconductor substrate. The first conductive layer has first and second portions which are electrically isolated during formation of the first conductive layer. A solder resist layer is formed over the first conductive layer and semiconductor substrate. An opening is formed in the solder resist layer to expose the first conductive layer. A seed layer is formed over the semiconductor substrate and first conductive layer within the opening. A second conductive layer is formed over the seed layer within the opening. The opening may expose the second portion of the first conductive layer due to solder resist registration shifting causing a defect condition. The second conductive layer electrically contacts the first and second portions of the first conductive layer. By testing the first and second portions of the first conductive layer, the defect condition can be identified.
1 . A method of manufacturing a semiconductor substrate, comprising:
forming a first conductive layer over a top surface of the semiconductor substrate, the first conductive layer having first and second portions which are electrically isolated during formation of the first conductive layer;
forming a solder resist layer over the first conductive layer and semiconductor substrate;
forming an opening in the solder resist layer to expose the first portion of the first conductive layer;
forming a protective mask over the solder resist layer outside the opening in the solder resist layer;
forming a seed layer over the semiconductor substrate and first portion of the first conductive layer within the opening in the solder resist layer;
forming a second conductive layer over the seed layer within the opening in the solder resist layer; and
removing the protective mask.
2 . The method of claim 1 , wherein forming the opening in the solder resist layer exposes the second portion of the first conductive layer due to solder resist registration shifting causing a defect condition, the second conductive layer electrically contacting the first and second portions of the first conductive layer.
3 . The method of claim 2 , further including testing the first and second portions of the first conductive layer to detect the defect condition.
4 . The method of claim 1 , wherein the semiconductor substrate includes a printed circuit board.
5 . A method of manufacturing a semiconductor substrate, comprising:
forming a first conductive layer over a top surface of the semiconductor substrate, the first conductive layer having first and second portions which are electrically isolated during formation of the first conductive layer;
forming an insulating layer over the first conductive layer and semiconductor substrate;
forming an opening in the insulating layer to expose the first portion of the first conductive layer; and
forming a second conductive layer within the opening in the insulating layer.
6 . The method of claim 5 , further including:
forming a protective mask over the insulating layer outside the opening in the insulating layer prior to forming the second conductive layer;
forming a seed layer over the semiconductor substrate and first portion of the first conductive layer within the opening in the insulating layer; and
removing the protective mask after forming the second conductive layer over the seed layer within the opening in the insulating layer.
7 . The method of claim 5 , wherein the insulating layer includes a solder resist layer.
8 . The method of claim 5 , wherein forming the opening in the insulating layer exposes the second portion of the first conductive layer due to registration shifting causing a defect condition, the second conductive layer electrically contacting the first and second portions of the first conductive layer.
9 . The method of claim 8 , further including testing the first and second portions of the first conductive layer to detect the defect condition.
10 . The method of claim 5 , wherein the semiconductor substrate includes a printed circuit board.
11 . The method of claim 5 , further including forming a bismaleimide triazine-epoxy layer over the semiconductor substrate.
12 . A method of manufacturing a semiconductor substrate, comprising:
forming a first conductive layer over a top surface of the semiconductor substrate, the first conductive layer having first and second portions which are electrically isolated during formation of the first conductive layer;
forming an insulating layer over the first conductive layer and semiconductor substrate;
forming a bond-on-lead site in the insulating layer, the bond-on-lead site including an opening in the insulating layer to expose a first conductive layer; and
forming a second conductive layer over the opening in the insulating layer.
13 . The method of claim 12 , further including:
forming a protective mask over the insulating layer outside the opening in the insulating layer prior to forming the second conductive layer;
forming a seed layer over the semiconductor substrate and first portion of the first conductive layer within the opening in the insulating layer; and
removing the protective mask after forming the second conductive layer over the seed layer within the opening in the insulating layer.
14 . The method of claim 12 , wherein the insulating layer includes a solder resist layer.
15 . The method of claim 12 , wherein forming the opening in the insulating layer exposes the second portion of the first conductive layer due to registration shifting causing a defect condition, the second conductive layer electrically contacting the first and second portions of the first conductive layer.
16 . The method of claim 15 , further including testing the first and second portions of the first conductive layer to detect the defect condition.
17 . The method of claim 12 , wherein the semiconductor substrate includes a printed circuit board.
18 . The method of claim 12 , further including forming a bismaleimide triazine-epoxy layer over the semiconductor substrate.
19 . The method of claim 12 , wherein the second conductive layer includes material selected from the group consisting of copper, electroless nickel immersion gold, electroless nickel electroless palladium immersion gold, organic solderability preservative, immersion tin, immersion gold, aluminum, tin, nickel, silver, and gold.
20 . A semiconductor substrate, comprising:
a first conductive layer formed over a top surface of the semiconductor substrate;
an insulating layer formed over the first conductive layer and semiconductor substrate;
a bond-on-lead site formed in the insulating layer, the bond-on-lead site including an opening in the insulating layer to expose the first conductive layer; and
a second conductive layer formed over the opening in the insulating layer and first conductive layer.
21 . The semiconductor substrate of claim 20 , further including a seed layer formed over the semiconductor substrate and first conductive layer within the opening in the insulating layer.
22 . The semiconductor substrate of claim 20 , wherein the insulating layer includes a solder resist layer.
23 . The semiconductor substrate of claim 20 , further including a bismaleimide triazine-epoxy layer formed over the semiconductor substrate.
24 . The semiconductor substrate of claim 20 , wherein the second conductive layer includes material selected from the group consisting of copper, electroless nickel immersion gold, electroless nickel electroless palladium immersion gold, organic solderability preservative, immersion tin, immersion gold, aluminum, tin, nickel, silver, and gold.