Semiconductor device and method of forming insulating layer around semiconductor die

1. A method of manufacturing a semiconductor device, comprising:

providing a carrier;

mounting a plurality of semiconductor die with contact pads oriented to the carrier;

depositing an encapsulant over the semiconductor die and carrier, wherein a portion of the encapsulant is designated as a saw street between the semiconductor die and a portion of the encapsulant is designated as a substrate edge around a perimeter of the encapsulant;

removing the carrier to expose a surface of the encapsulant;

forming a first insulating layer over the semiconductor die and directly on the saw street and substrate edge;

forming a conductive layer over the first insulating layer and contacting the semiconductor die;

forming a second insulating layer over the conductive layer and first insulating layer; and

singulating the encapsulant through the first insulating layer and saw street to separate the semiconductor die.

2. The method of claim 1 , further including forming the first insulating layer to cover a molding area around the semiconductor die.

3. The method of claim 2 , further including forming the first insulating layer to cover the entire saw street and molding area.

4. The method of claim 1 , further including forming a channel in the first insulating layer on opposing sides of the saw street.

5. The method of claim 1 , further including forming a channel in the first insulating layer along the substrate edge.

6. The method of claim 1 , further including forming the first insulating layer in a net pattern to cover the saw street and substrate edge.

7. The method of claim 1 , further including forming a bump over the conductive layer.

8. A method of manufacturing a semiconductor device, comprising:

providing a carrier;

mounting semiconductor die to the carrier;

depositing an encapsulant over the semiconductor die and carrier, wherein a portion of the encapsulant is designated as a saw street between the semiconductor die;

removing the carrier to expose a surface of the encapsulant;

forming a first insulating layer over the semiconductor die and directly on the saw street;

forming a conductive layer on the semiconductor die and over the first insulating layer;

forming a second insulating layer over the conductive layer and first insulating layer; and

singulating the encapsulant through the first insulating layer and saw street.

9. The method of claim 8 , wherein a portion of the encapsulant is designated as a substrate edge around a perimeter of the encapsulant.

10. The method of claim 9 , further including forming a channel in the first insulating layer along the substrate edge.

11. The method of claim 9 , further including forming the first insulating layer in a net pattern to cover the saw street and substrate edge.

12. The method of claim 8 , further including forming the first insulating layer to cover a molding area around the semiconductor die.

13. The method of claim 12 , further including forming the first insulating layer to cover the entire saw street and molding area.

14. The method of claim 8 , further including forming a channel in the first insulating layer on opposing sides of the saw street.

15. A method of manufacturing a semiconductor device, comprising:

providing a plurality of semiconductor die;

depositing an encapsulant over the semiconductor die, wherein a portion of the encapsulant is designated as a saw street between the semiconductor die;

forming an insulating layer over the semiconductor die and directly on the encapsulant;

forming a redistribution layer (RDL) over the insulating layer; and

singulating the encapsulant through the insulating layer and saw street.

16. The method of claim 15 , wherein a portion of the encapsulant is designated as a substrate edge around a perimeter of the encapsulant.

17. The method of claim 16 , further including forming a channel in the insulating layer along the substrate edge.

18. The method of claim 16 , further including forming the insulating layer in a net pattern to cover the saw street and substrate edge.

19. The method of claim 15 , further including forming the insulating layer to cover the entire saw street and a molding area around the semiconductor die.

20. The method of claim 15 , further including forming a channel in the insulating layer on opposing sides of the saw street.

21. A method of manufacturing a semiconductor device, comprising:

providing a plurality of semiconductor die;

depositing an encapsulant around the semiconductor die;

forming an insulating layer directly on and in contact with the encapsulant;

forming a conductive layer over the insulating layer; and

singulating the encapsulant through the insulating layer.

22. The method of claim 21 , further including:

forming a first channel in the insulating layer;

forming a second channel in the insulating layer; and

singulating the encapsulant through the insulating layer between the first and second channels in the insulating layer.

23. The method of claim 21 , further including:

forming a first net pattern in the insulating layer;

forming a second net pattern in the insulating layer; and

singulating the encapsulant through the insulating layer between the first and second net patterns in the insulating layer.

24. The method of claim 21 , further including singulating the encapsulant using a step cut.